1,106 research outputs found

    Viabilidade do exame ultrassonográfico pelas vias transretal, transabdominal e transvaginal para diagnosticar prenhez em cabras e ovelhas

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    Neste trabalho objetivou-se verificar a viabilidade do exame ultrassonográfico pelas vias transretal, transabdominal e transvaginal para diagnosticar a gestação de cabras (n = 240) e ovelhas (n = 320) no 30o, 45o, 60o e 75o dia. Foi utilizando um aparelho de ultrassom equipado com um transdutor linear utilizado pelas vias transretal e transabdominal e outro microconvexo endocavitário utilizado por via transvaginal. Nas cabras e ovelhas, o exame ultrassonográfico pela via transretal foi mais rápido (P < 0,05) no 30o e no 45o dia da gestação, mas, pela via transabdominal foi mais rápido no 60o e no 75o dia. Em ambas as espécies, a duração do diagnóstico de gestação foi maior (P < 0,05) no 30o dia do que nos demais, enquanto que a duração do diagnóstico no 75o dia foi menor (P < 0,05) do que no 45o e 60o. Independentemente da via de exame e do dia da gestação, o tempo médio para diagnosticar a gestação foi menor (P < 0,05) nas cabras do que nas ovelhas. Independentemente da espécie e do dia da gestação, o tempo médio  para diagnosticar a gestação pela via transretal foi menor (P < 0,05) do que as demais e o da transvaginal  foi menor (P < 0,05) do que o da via transabdominal. Os resultados permitem concluir que o diagnóstico de gestação é mais rápido pela via transretal, que o tempo de diagnóstico é menor na gestação avançada e na espécie caprina.&nbsp

    Highlights on Allergic Rhinitis and its Impact on Asthma

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    Gate-controlled Guiding of Electrons in Graphene

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    Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create electronic analogs of optical devices having both positive and negative indices of refraction. Here, we use gate-controlled density with both p and n carrier types to demonstrate the analog of the fiber-optic guiding in graphene. Two basic effects are investigated: (1) bipolar p-n junction guiding, based on the principle of angle-selective transmission though the graphene p-n interface, and (2) unipolar fiber-optic guiding, using total internal reflection controlled by carrier density. Modulation of guiding efficiency through gating is demonstrated and compared to numerical simulations, which indicates that interface roughness limits guiding performance, with few-nanometer effective roughness extracted. The development of p-n and fiber-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.Comment: supplementary materal at http://marcuslab.harvard.edu/papers/OG_SI.pd

    STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

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    Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles, resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. In this letter, we use scanning tunneling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moire patterns in the topographic images. However, contrary to recent predictions, this conformation does not lead to a sizable band gap due to the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron-hole charge fluctuations are reduced by two orders of magnitude as compared to those on silicon oxide. This leads to charge fluctuations which are as small as in suspended graphene, opening up Dirac point physics to more diverse experiments than are possible on freestanding devices.Comment: Nature Materials advance online publication 13/02/201

    A molecular method for the detection of sally lightfoot crab larvae (Grapsus grapsus, Brachyura, Grapsidae) in plankton samples

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    The decapod Grapsus grapsus is commonly found on oceanic islands of the Pacific and Atlantic coasts of the Americas. In this study, a simple, quick and reliable method for detecting its larvae in plankton samples is described, which makes it ideal for large-scale studies of larval dispersal patterns in the species

    Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films

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    The outstanding electrical and mechanical properties of graphene make it very attractive for several applications, Nanoelectronics above all. However a reproducible and non destructive way to produce high quality, large-scale area, single layer graphene sheets is still lacking. Chemical Vapour Deposition of graphene on Cu catalytic thin films represents a promising method to reach this goal, because of the low temperatures (T < 900 Celsius degrees) involved during the process and of the theoretically expected monolayer self-limiting growth. On the contrary such self-limiting growth is not commonly observed in experiments, thus making the development of techniques allowing for a better control of graphene growth highly desirable. Here we report about the local ablation effect, arising in Raman analysis, due to the heat transfer induced by the laser incident beam onto the graphene sample.Comment: v1:9 pages, 8 figures, submitted to SpringerPlus; v2: 11 pages, PDFLaTeX, 9 figures, revised peer-reviewed version resubmitted to SpringerPlus; 1 figure added, figure 1 and 4 replaced,typos corrected, "Results and discussion" section significantly extended to better explain etching mechanism and features of Raman spectra, references adde
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