The quasiparticle band gap in the topological insulator Bi2Te3

We present a theoretical study of dispersion of states which form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varying within the error range of the available experimental data and approximation chosen for the exchange-correlation functional on the bulk band gap and k-space location of valence- and conduction-band extrema. For each set of the positions with different exchange-correlation functionals, we show how many-body corrections calculated within a one-shot GW approach affect the mentioned characteristics of electronic structure of Bi2Te3. We thus also illustrate to what degree the one-shot GW results are sensitive to the reference one-particle band structure in the case of bismuth telluride. We found that for this topological insulator the GW corrections enlarge the fundamental band gap and for certain atomic positions and reference band structure bring its value in close agreement with experiment.Comment: 12 pages, 6 figures, 5 table

Random Hierarchical Matrices: Spectral Properties and Relation to Polymers on Disordered Trees

We study the statistical and dynamic properties of the systems characterized by an ultrametric space of states and translationary non-invariant symmetric transition matrices of the Parisi type subjected to "locally constant" randomization. Using the explicit expression for eigenvalues of such matrices, we compute the spectral density for the Gaussian distribution of matrix elements. We also compute the averaged "survival probability" (SP) having sense of the probability to find a system in the initial state by time $t$. Using the similarity between the averaged SP for locally constant randomized Parisi matrices and the partition function of directed polymers on disordered trees, we show that for times $t>t_{\rm cr}$ (where $t_{\rm cr}$ is some critical time) a "lacunary" structure of the ultrametric space occurs with the probability $1-{\rm const}/t$. This means that the escape from some bounded areas of the ultrametric space of states is locked and the kinetics is confined in these areas for infinitely long time.Comment: 7 pages, 2 figures (the paper is essentially reworked

Planar diagrams from optimization

We propose a new toy model of a heteropolymer chain capable of forming planar secondary structures typical for RNA molecules. In this model the sequential intervals between neighboring monomers along a chain are considered as quenched random variables. Using the optimization procedure for a special class of concave--type potentials, borrowed from optimal transport analysis, we derive the local difference equation for the ground state free energy of the chain with the planar (RNA--like) architecture of paired links. We consider various distribution functions of intervals between neighboring monomers (truncated Gaussian and scale--free) and demonstrate the existence of a topological crossover from sequential to essentially embedded (nested) configurations of paired links.Comment: 10 pages, 10 figures, the proof is added. arXiv admin note: text overlap with arXiv:1102.155

Rashba split surface states in BiTeBr

Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter \alpha_R ~ 2 eV\AA.Comment: 8 pages, 7 figure

Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics

Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to make graphene Dirac states spin-polarized. Here, we report on absolutely new promising pathway to create spin-polarized Dirac states based on coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We demonstrate how the spin-helical Dirac states are formed in graphene deposited on the surface of BiTeCl. This coupling induces spin separation of the originally spin-degenerate graphene states and results in fully helical in-plane spin polarization of the Dirac electrons.Comment: 5 pages, 3 figure