Accumulation and depletion layer thicknesses in organic field effect transistors

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in-situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG=-15 V) and 5 nm (VG=15 V).Comment: 3 pages, 4 figures, Jap. J. Appl. Phys. in pres

Cell Therapy Using Induced Pluripotent Stem (iPS) Cells Meets Next-Next Generation DNA Sequencing Technology

The recent development of induced pluripotent stem (iPS) cell technology brings cell and gene therapies to patients one large step closer to reality. Technical improvements in various research fields sometimes come together fortuitously, leading to approaches to treating disease. If iPS cell technology continues to progress smoothly as expected and is actually applied to patients, the next logical step to ensuring the success of iPS cell therapy is to make use of next-next generation DNA sequencing technology and bioinformatics of recipient genomes. Before a patient-derived iPS cell colony is used for clinical therapy in a patient, the colony should undergo whole-genome DNA sequencing, thus avoiding risks associated with spontaneously mutagenized iPS cells. Researchers participating in the Human Genome Project need to take full advantage of both technologies—iPS cell technology and DNA sequencing—as doing so will help us achieve the original long-term goal of the project: developing therapies that will benefit human health

Revival of apoptotic cells that display early-stage dynamic membrane blebbing

AbstractThe critical point at which apoptosis becomes irreversible and how cells attain an anti-apoptotic state remain unknown. Here, we report that apoptotic cells undergoing early-stage dynamic membrane blebbing revive. We examined this phenomenon in cell lines that stably express 2DED2DD, a modified FADD produced by fusing the tandem death effector domains (DEDs) and tandem death domains (DDs). Induction of apoptosis caused rapid blebbing. Eight hours later, most cells shrunk while some detached from the flask. Twenty-four hours later, when activated caspase 3 decreased, more than half the cells revived and appeared normal, probably due to the induction of unidentified anti-apoptotic proteins

Electric field induced charge injection or exhaustion in organic thin film transistor

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends on the chemical species.Comment: 4 figures, to be published in Phys. Rev.

VCre/VloxP and SCre/SloxP: new site-specific recombination systems for genome engineering

We developed two new site-specific recombination systems named VCre/VloxP and SCre/SloxP for genome engineering. Their recognition sites are different from Cre recognition sites because VCre and SCre recombinases share less protein similarity with Cre, even though the basic 13-8-13 structures of their recognition sites are identical. Mutant VloxP and SloxP, which have the same uses as mutant loxP, were also developed. VCre/VloxP and SCre/SloxP in combination with Cre/loxP and Flp/FRT systems can serve as powerful tools for genome engineering, especially when used to genetically modify both alleles of a single gene in mouse and human cells

Screening of sleep apnea based on heart rate variability and long short-term memory

Purpose: Sleep apnea syndrome (SAS) is a prevalent sleep disorder in which apnea and hypopnea occur frequently during sleep and result in increase of the risk of lifestyle-related disease development as well as daytime sleepiness. Although SAS is a common sleep disorder, most patients remain undiagnosed because the gold standard test polysomnography (PSG), is high-cost and unavailable in many hospitals. Thus, an SAS screening system that can be used easily at home is needed. Methods: Apnea during sleep affects changes in the autonomic nervous function, which causes fluctuation of the heart rate. In this study, we propose a new SAS screening method that combines heart rate measurement and long short-term memory (LSTM) which is a type of recurrent neural network (RNN). We analyzed the data of intervals between adjacent R waves (R-R interval; RRI) on the electrocardiogram (ECG) records, and used an LSTM model whose inputs are the RRI data is trained to discriminate the respiratory condition during sleep. Results: The application of the proposed method to clinical data showed that it distinguished between patients with moderate-to-severe SAS with a sensitivity of 100% and specificity of 100%, results which are superior to any other existing SAS screening methods. Conclusion: Since the RRI data can be easily measured by means of wearable heart rate sensors, our method may prove to be useful as an SAS screening system at home

Cutting error prediction by multilayer neural networks for machine tools with thermal expansion and compression

In training neural networks, it is important to reduce input variables for saving memory, reducing network size, and achieving fast training. This paper proposes two kinds of selecting methods for useful input variables. One of them is to use information of connection weights after training. If a sum of absolute value of the connection weights related to the input node is large, then this input variable is selected. In some case, only positive connection weights are taken into account. The other method is based on correlation coefficients among the input variables. If a time series of the input variable can be obtained by amplifying and shifting that of another input variable, then the former can be absorbed in the latter. These analysis methods are applied to predicting cutting error caused by thermal expansion and compression in machine tools. The input variables are reduced from 32 points to 16 points, while maintaining good prediction within 6 ﾎｼm, which can be applicable to real machine tools

Vertical oxide semiconductor field-effect transistor with extremely low off-state current

Oxide semiconductor field-effect transistors (OSFETs) are actively developed for display applications. An OSFET exhibits a lower off-state current than a silicon FET and enables low-frequency driving. We developed the measurement method and revealed the OSFET exhibits an extremely low off-state current [1]. In addition, we discovered a c-axis aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) which was unique crystal morphology [2]. A display with a backplane formed using CAAC-IGZO FETs achieves low power consumption owing to idling-stop driving that allows an extremely low refresh rate [3]. Please click Download on the upper right corner to see the full abstract

Broadly Tunable Sub-terahertz Emission from Internal Branches of the Current-voltage Characteristics of Superconducting Bi2Sr2CaCu2O8+d Single Crystals

Continuous, coherent sub-terahertz radiation arises when a dc voltage is applied across a stack of the many intrinsic Josephson junctions in a Bi2Sr2CaCu2O8+d single crystal. The active junctions produce an equal number of I-V characteristic branches. Each branch radiates at a slightly tunable frequency obeying the ac Josephson relation. The overall output is broadly tunable and nearly independent of heating effects and internal cavity frequencies. Amplification by a surrounding external cavity to allow for the development of a useful high-power source is proposed.Comment: 4 pages, 4 figures, accepted for publication in PR