A Memristor as Multi-Bit Memory: Feasibility Analysis

The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristors-based multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell, lay grounds for full integration of memristor multi-bit memory cell

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics

Excitonic instability and electric-field-induced phase transition towards a two dimensional exciton condensate

We present an InAs-GaSb-based system in which the electric-field tunability of its 2D energy gap implies a transition towards a thermodynamically stable excitonic condensed phase. Detailed calculations show a 3 meV BCS-like gap appearing in a second-order phase transition with electric field. We find this transition to be very sharp, solely due to exchange interaction, and so, the exciton binding energy is greatly renormalized even at small condensate densities. This density gradually increases with external field, thus enabling the direct probe of the Bose-Einstein to BCS crossover.Comment: LaTex, 11 pages, 3 ps figures, To appear in PR

Current noise in long diffusive SNS junctions in the incoherent MAR regime

Spectral density of current fluctuations at zero frequency is calculated for a long diffusive SNS junction with low-resistive interfaces. At low temperature, T << Delta, the subgap shot noise approaches linear voltage dependence, S=(2/ 3R)(eV + 2Delta), which is the sum of the shot noise of the normal conductor and voltage independent excess noise. This result can also be interpreted as the 1/3-suppressed Poisson noise for the effective charge q = e(1+2Delta/eV) transferred by incoherent multiple Andreev reflections (MAR). At higher temperatures, anomalies of the current noise develop at the gap subharmonics, eV = 2Delta/n. The crossover to the hot electron regime from the MAR regime is analyzed in the limit of small applied voltages.Comment: improved version, to be published in Phys. Rev.

Graphene-Based Nanomaterials for Neuroengineering: Recent Advances and Future Prospective

Graphene unique physicochemical properties made it prominent among other allotropic forms of carbon, in many areas of research and technological applications. Interestingly, in recent years, many studies exploited the use of graphene family nanomaterials (GNMs) for biomedical applications such as drug delivery, diagnostics, bioimaging, and tissue engineering research. GNMs are successfully used for the design of scaffolds for controlled induction of cell differentiation and tissue regeneration. Critically, it is important to identify the more appropriate nano/bio material interface sustaining cells differentiation and tissue regeneration enhancement. Specifically, this review is focussed on graphene-based scaffolds that endow physiochemical and biological properties suitable for a specific tissue, the nervous system, that links tightly morphological and electrical properties. Different strategies are reviewed to exploit GNMs for neuronal engineering and regeneration, material toxicity, and biocompatibility. Specifically, the potentiality for neuronal stem cells differentiation and subsequent neuronal network growth as well as the impact of electrical stimulation through GNM on cells is presented. The use of field effect transistor (FET) based on graphene&nbsp;for neuronal regeneration is described. This review concludes the important aspects to be controlled to make graphene a promising candidate for further advanced application in neuronal tissue engineering and biomedical use

What you know can influence what you are going to know (especially for older adults)

Stimuli related to an individual's knowledge/experience are often more memorable than abstract stimuli, particularly for older adults. This has been found when material that is congruent with knowledge is contrasted with material that is incongruent with knowledge, but there is little research on a possible graded effect of congruency. The present study manipulated the degree of congruency of study material with participants’ knowledge. Young and older participants associated two famous names to nonfamous faces, where the similarity between the nonfamous faces and the real famous individuals varied. These associations were incrementally easier to remember as the name-face combinations became more congruent with prior knowledge, demonstrating a graded congruency effect, as opposed to an effect based simply on the presence or absence of associations to prior knowledge. Older adults tended to show greater susceptibility to the effect than young adults, with a significant age difference for extreme stimuli, in line with previous literature showing that schematic support in memory tasks particularly benefits older adults

Effect of screening on shot noise in diffusive mesoscopic conductors

Shot noise in diffusive mesoscopic conductors, at finite observation frequencies $\omega$ (comparable to the reciprocal Thouless time $\tau_T^{-1}$), is analyzed with an account of screening. At low frequencies, the well-known result $S_I(\omega)=2eI/3$ is recovered. This result is valid at arbitrary $\omega \tau_T$ for wide conductors longer than the screening length. However, at least for two very different systems, namely, wide and short conductors, and thin conductors over a close ground plane, noise approaches a different fundamental level, $S_I(\omega) = eI$, at $\omega \tau _T\gg 1$.Comment: 5 pages, 3 figures. Published version. Also available in the journal's format at http://hana.physics.sunysb.edu/~yehuda/cv/papers/shotnoise.pd

Non-equilibrium current noise in mesoscopic disordered SNS junctions

Current noise in superconductor-normal metal-superconductor (SNS) junctions is calculated within the scattering theory of multiple Andreev reflections (MAR). It is shown that the noise exhibits subharmonic gap singularities at $eV=2\Delta/n$, $n=1,2,...$ both in single-mode junctions with arbitrary transparency $D$ and in multi-mode disordered junctions. The subharmonic structure is superimposed with monotonic increase of the effective transferred charge $q^*=S_I(0)/2I$ with decreasing bias voltage. Other features of the noise include a step-like increase of $q^*$ in junctions with small $D$, and a divergence $S_I(0) \propto V^{-1/2}$ at small voltages and excess noise $S_{ex} = 2eI_{ex}$, where $I_{ex}$ is the excess current, at large voltages, in junctions with diffusive transport.Comment: 5 page