Development of a scalable generic platform for adaptive optics real time control

The main objective of the present project is to explore the viability of an adaptive optics control system based exclusively on Field Programmable Gate Arrays (FPGAs), making strong use of their parallel processing capability. In an Adaptive Optics (AO) system, the generation of the Deformable Mirror (DM) control voltages from the Wavefront Sensor (WFS) measurements is usually through the multiplication of the wavefront slopes with a predetermined reconstructor matrix. The ability to access several hundred hard multipliers and memories concurrently in an FPGA allows performance far beyond that of a modern CPU or GPU for tasks with a well defined structure such as Adaptive Optics control. The target of the current project is to generate a signal for a real time wavefront correction, from the signals coming from a Wavefront Sensor, wherein the system would be flexible to accommodate all the current Wavefront Sensing techniques and also the different methods which are used for wavefront compensation. The system should also accommodate for different data transmission protocols (like Ethernet, USB, IEEE 1394 etc.) for transmitting data to and from the FPGA device, thus providing a more flexible platform for Adaptive Optics control. Preliminary simulation results for the formulation of the platform, and a design of a fully scalable slope computer is presented.Comment: Paper presented as part of SPIE ICOP 2015 Conference Proceeding

Viscosity of High Energy Nuclear Fluids

Relativistic high energy heavy ion collision cross sections have been interpreted in terms of almost ideal liquid droplets of nuclear matter. The experimental low viscosity of these nuclear fluids have been of considerable recent quantum chromodynamic interest. The viscosity is here discussed in terms of the string fragmentation models wherein the temperature dependence of the nuclear fluid viscosity obeys the Vogel-Fulcher-Tammann law.Comment: 6 pages, ReVTeX 4 format, two figures, *.eps forma

Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes

Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3100

Evaluation of prescription errors and polypharmacy practices in rural area at community pharmacy

Background: Prescription refers to a written request from physician to patient for compounding and dispensing of medicines. The prescription comprises detail information of patient, physician, and drugs, absence of these prescription parameters may harm the patient’s safety. Inappropriate practices like polypharmacy prescriptions must be avoided as this may lead to non-compliance.Methods: A cross section observational study was conducted at a community pharmacy from September to November 2019. Permission was taken from the registered pharmacist. Prescriptions were collected from the subjects who visited the pharmacy in rural area. A checklist was prepared including all the parameters and the prescriptions were analyzed through Microsoft excel.Results: Out of 2227 prescriptions collected, patient’s name, age and weight were not written in 10.57%, 78.41%, and 12.33% of prescriptions respectively. Physician’s name, designation and registration number were not mentioned in 18.50%, 21.14%, 29.51% prescriptions respectively. Date of issue was lacking in 12.33% prescriptions. It was found that 44.49% prescriptions were illegible. It was observed that 82.81% prescriptions possessed dosage form of drug and 32.15% dose in it. The study showed that 19.2% prescriptions were polypharmacy prescriptions.Conclusions: Prescription is an authoritative document between doctor and pharmacist therefore it needs to be precise, fastidious, and scrupulous, monitoring to identify causes, analyze errors and blemishes in the prescription. One or other parameters were lacking in every prescription. ‘Educate to medicate’ this indicates that sound knowledge is requiring to prescribe therapeutically efficacious and accurate medicines in prescription

Impact of annealing on CuInSe2 thin films and its Schottky interface

The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were compared on the basis of structural, morphological and electrical investigations. Wherein, annealed films showed an increase in the grain size and carrier concentration values while decrease in resistivity. I-V analysis of the Schottky diodes depicted decrease in the barrier heights and increase in ideality factors of those formed on annealed films. The diodes, thus, indicated the existence of barrier inhomogenity at the M-S interface. The annealed Schottky diodes also demonstrated better ideality factor values with increased thickness of CIS layer. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2792

Structure, Optical And Electrical Characterization Of Tin Selenide Thin Films Deposited At Room Temperature Using Thermal Evaporation Method

Tin Selenide (SnSe) is an important IV-VI compound semiconducting material used for various devices like memory switching, an efficient solar cell and holographic recording systems. SnSe thin films of the thickness of 100 nm were deposited by thermal evaporation method on a Glass substrate at room temperature. The prepared samples were investigated for structural, compositional, morphological and optical characte-rization respectively by using X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and transmission measurements. Thus deposited films showed a good polycrystalline quality having preferred (111) orientation with uniformly distributed spherical grains having size 16nm.The grown film identified as P- types by hot probe method. The films were found to have direct band transition having an optical bandgap (Eg) of 1.92 eV at room temperature. The temperature depended electrical resistivity (ρ) determined by using the two probe method, found to be 390 Ω·m at room temperature. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/952