A College of Eduation'sTechnology Journey -- From Neophyte to National Leader

This is the authors' accepted manuscript, post peer-review. The original published version can be found at: http://dx.doi.org/10.1080/01626620.2001.10463071Technology is integral to education and learning in today’s world. It is especially important that teacher educators and pre-service and in-service teachers are taught by faculties who are competent users of technologies that enhance the learning process. This paper describes, as a possible guide to others, how one College of Education built its computer infrastructure and technology expertise. Essential in this process were a commitment in the part of the Dean, significant funding, technology training sessions, and the expertise of technology specialists. The integration of technology throughout this College has positioned it to become an innovative leader infusing technology into its educational programs

Activation mechanisms in sodium-doped Silicon MOSFETs

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.Comment: published in J. Phys. : Condens. Matte

Tetrodotoxin-sensitive sodium channels mediate action potential firing and excitability in menthol-sensitive Vglut3-lineage sensory neurons

© The Author(s), 2019. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Journal of Neuroscience 39(36), (2019): 7086-7101, doi:10.1523/JNEUROSCI.2817-18.2019.Small-diameter vesicular glutamate transporter 3-lineage (Vglut3lineage) dorsal root ganglion (DRG) neurons play an important role in mechanosensation and thermal hypersensitivity; however, little is known about their intrinsic electrical properties. We therefore set out to investigate mechanisms of excitability within this population. Calcium microfluorimetry analysis of male and female mouse DRG neurons demonstrated that the cooling compound menthol selectively activates a subset of Vglut3lineage neurons. Whole-cell recordings showed that small-diameter Vglut3lineage DRG neurons fire menthol-evoked action potentials and exhibited robust, transient receptor potential melastatin 8 (TRPM8)-dependent discharges at room temperature. This heightened excitability was confirmed by current-clamp and action potential phase-plot analyses, which showed menthol-sensitive Vglut3lineage neurons to have more depolarized membrane potentials, lower firing thresholds, and higher evoked firing frequencies compared with menthol-insensitive Vglut3lineage neurons. A biophysical analysis revealed voltage-gated sodium channel (NaV) currents in menthol-sensitive Vglut3lineage neurons were resistant to entry into slow inactivation compared with menthol-insensitive neurons. Multiplex in situ hybridization showed similar distributions of tetrodotoxin (TTX)-sensitive NaV transcripts between TRPM8-positive and -negative Vglut3lineage neurons; however, NaV1.8 transcripts, which encode TTX-resistant channels, were more prevalent in TRPM8-negative neurons. Conversely, pharmacological analyses identified distinct functional contributions of NaV subunits, with NaV1.1 driving firing in menthol-sensitive neurons, whereas other small-diameter Vglut3lineage neurons rely primarily on TTX-resistant NaV channels. Additionally, when NaV1.1 channels were blocked, the remaining NaV current readily entered into slow inactivation in menthol-sensitive Vglut3lineage neurons. Thus, these data demonstrate that TTX-sensitive NaVs drive action potential firing in menthol-sensitive sensory neurons and contribute to their heightened excitability.This work was supported by NIAMS R01AR051219 (E.A.L.). T.N.G. holds a Postdoctoral Enrichment Program Award from the Burroughs Wellcome Fund and was supported by NHLBI T32HL120826. Core facilities were supported by the Columbia University EpiCURE Center (NIAMS P30AR069632) and the Thompson Family Foundation Initiative in CIPN and Sensory Neuroscience. This project was initiated during the MBL Neurobiology Course with support from NINDS R25NS063307. Dr. Blair Jenkins, Javier Marquina-Solis, and Dr. Adrian Thompson participated in preliminary studies at MBL. We thank Dr. Manu Ben-Johny and Dr. Lori Isom for sharing reagents, Dr. Irina Vetter for peptide toxins, Venesa Cuadrado for technical assistance, Rachel Clary for assistance with custom MATLAB routines, and Dr. Jon Sack and members of the Lumpkin laboratory for helpful discussions.2020-01-0

Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.Comment: 4 pages; 5 figures; Published in PRB Rapid-Communication

Thermal Analysis for Orbiter and ISS Plume Impingement on International Space Station

The NASA Reaction Control System (RCS) Plume Model (RPM) is an exhaust plume flow field and impingement heating code that has been updated and applied to components of the International Space Station (ISS). The objective of this study was to use this code to determine if plume environments from either Orbiter PRCS jets or ISS reboost and Attitude Control System (ACS) jets cause thermal issues on ISS component surfaces. This impingement analysis becomes increasingly important as the ISS is being assembled with its first permanent crew scheduled to arrive by the end of fall 2000. By early summer 2001 , the ISS will have a number of major components installed such as the Unity (Node 1), Destiny (Lab Module), Zarya (Functional Cargo Block), and Zvezda (Service Module) along with the P6 solar arrays and radiators and the Z-1 truss. Plume heating to these components has been analyzed with the RPM code as well as additional components for missions beyond Flight 6A such as the Propulsion Module (PM), Mobile Servicing System, Space Station Remote Manipulator System, Node 2, and the Cupola. For the past several years NASA/JSC has been developing the methodology to predict plume heating on ISS components. The RPM code is a modified source flow code with capabilities for scarfed nozzles and intersecting plumes that was developed for the 44 Orbiter RCS jets. This code has been validated by comparison with Shuttle Plume Impingement Flight Experiment (SPIFEX) heat flux and pressure data and with CFD and Method of Characteristics solutions. Previous analyses of plume heating predictions to the ISS using RPM have been reported, but did not consider thermal analysis for the components nor jet-firing histories as the Orbiter approaches the ISS docking ports. The RPM code has since been modified to analyze surface temperatures with a lumped mass approach and also uses jet-firing histories to produce pulsed heating rates. In addition, RPM was modified to include plume heating from ISS jets to ISS components where the jet coordinates are specified, together with the engine cant angle. These latter studies have been focused on the PM with plumes from its reboost and ACS jets impinging on various ISS components and also focused on the Japanese H2 Transfer Vehicle (HTV) with the plumes from its reboost engines impinging on the Cupola window. This paper will present plume heating and surface temperature results on a number of ISS components with and without jet-firing histories, evaluate post-flight data, and describe any potential thermal issue

Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation

Variation of the hopping exponent in disordered silicon MOSFETs

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.Comment: 6 pages, 5 figure