Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.Comment: 3 pages, 4 figure

Resonant structures based on amorphous silicon sub-oxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that allowed increasing approximately 12x the 1550nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx matrix was deposited by reactive RF co-sputtering. Secondly, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx matrix via a hard annealing at 1150 C. The SiO2 and the a-SiOx thicknesses were designed to support resonances near the pumping wavelength (~500nm), near the Si-NC emission (~800nm) and near the a-SiOx emission (~1550nm) enhancing the optical pumping process.Comment: 14 pages, 4 figures, in submissio

Hybrid multimode resonators based on grating-assisted counter-directional couplers

FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPResearch thrusts in silicon photonics are developing control operations using higher order waveguide modes for next generation high-bandwidth communication systems. In this context, devices allowing optical processing of multiple waveguide modes can reduce architecture complexity and enable flexible on-chip networks. We propose and demonstrate a hybrid resonator dually resonant at the 1st and 2nd order modes of a silicon waveguide. We observe 8 dB extinction ratio and modal conversion range of 20 nm for the 1st order quasi-TE mode input.25141648416490FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP2015/20525-6Office of Naval Research (ONR) Multi-Disciplinary Research Initiative; National Science Foundation (NSF) (NNCI-SDNI, ERC CIAN); Defense Advanced Research Projects Agency (DARPA); Army Research Office (ARO); Cymer Corporation. M. Souza acknowledges FAPESP (grant 2015/20525-6)

Comparative study between wet and dry etching of silicon for microchannels fabrication

FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOIn this work we present a comparative study of two processes for the fabrication of an array of microchannels for microfluidics applications, based on integrated-circuit technology process steps, such as lithography and dry etching. Two different methods were investigated in order to study the resulting microstructures: wet and dry deep etching of silicon substrate. The typical etching depth necessary to the target application is 50 mu m.1093015FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO2016/09509-112. Conference on Advanced Fabrication Technologies for Micro/Nano Optics and Photonics3 a 5 de Fevereiro de 2019San Francisco, CA, Estados UnidosSPIE; Nanoscribe Gmb

Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga+ Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Annealing in inert atmosphere partially revert these effects resulting in 4% increment in threshold current, 11% reduction in external efficiency and 13 nm blue shift with the as cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current indicating that optical damage is the main effect of the milling process.Comment: 12 pages, 4 figure

A Systematic Analysis on DNA Methylation and the Expression of Both mRNA and microRNA in Bladder Cancer

Background: DNA methylation aberration and microRNA (miRNA) deregulation have been observed in many types of cancers. A systematic study of methylome and transcriptome in bladder urothelial carcinoma has never been reported. Methodology/Principal Findings: The DNA methylation was profiled by modified methylation-specific digital karyotyping (MMSDK) and the expression of mRNAs and miRNAs was analyzed by digital gene expression (DGE) sequencing in tumors and matched normal adjacent tissues obtained from 9 bladder urothelial carcinoma patients. We found that a set of significantly enriched pathways disrupted in bladder urothelial carcinoma primarily related to "neurogenesis" and "cell differentiation" by integrated analysis of -omics data. Furthermore, we identified an intriguing collection of cancer-related genes that were deregulated at the levels of DNA methylation and mRNA expression, and we validated several of these genes (HIC1, SLIT2, RASAL1, and KRT17) by Bisulfite Sequencing PCR and Reverse Transcription qPCR in a panel of 33 bladder cancer samples. Conclusions/Significance: We characterized the profiles between methylome and transcriptome in bladder urothelial carcinoma, identified a set of significantly enriched key pathways, and screened four aberrantly methylated and expressed genes. Conclusively, our findings shed light on a new avenue for basic bladder cancer research

Resonant amplification via Er-doped clad Si photonic molecules: towards compact low-loss/high-Q Si photonic devices

FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOSilicon photonics routers and band-pass filters employing ring resonators are usually constrained by a trade-off between quality factors and insertion loss, which is even more pronounced in compact designs. Device real estate is another factor to be considered for compactness and cost reduction. We propose an approach to simultaneously reduce insertion losses and increase the quality factor in such devices, while minimizing footprint. This approach consists in replacing the standard SiO2 top cladding of Si devices by erbium-doped Al2O3 films with a single post-processing step. Experimental results confirm the effectiveness of the method, where 1 dB output power increase is observed for a single ring device, in addition to an increase of 5% in the Q factor. In some cases of structures comprised of multiple coupled resonators, i.e., photonic molecules, the observed value of power increase is as high as 2.6 dB, with a Q factor increase of 25% and loss reduction of 3 dB.155144149FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO08/57857-22014/04748-2574017/2008-99. Advanced Research Workshop on Future Trends in Microelectronics (FTM)10 a 16 de Junho de 2018Sardinia, Itáli