On-chip coherent detection with quantum limited sensitivity

While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon’s frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/∆f exceeding 1011. By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously

Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources

Improved performance of InSe field-effect transistors by channel encapsulation

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly (methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials

Quantum confinement and photoresponsivity ofβ-In2Se3 nanosheets grown by physical vapour transport

We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterised using Raman spectroscopy and x-ray diffraction from which we confirm lattice constants c = 28.31 ± 0.05 Å and a = 3.99 ± 0.02 Å. In addition, these layers show high photoresponsivity of up to ~2 × 103 A W−1 at λ = 633 nm, with rise and decay times of τ r = 0.6 ms and τ d = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity photodetectors

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature

We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second antiferromagnetic MnSe phase, and traces of In₄ Se₃ Magnetic measurements reveal ferromagnetic behavior of (In,Mn)Se with the Curie temperature about 800 K. The ferromagnetic cluster model and exchange interaction via 2D electron gas, as the reasons of spontaneous magnetization, are discussed. The dramatic transformation of (In,Mn)Se electron spin resonance (ESR) spectra as a function of temperature is revealed. At the magnetic field perpendicular to crystallographic c axis, a low-field line within the temperature range 70 down to 4.7 K is observed. It shifts to smaller magnetic fields with temperature decrease. Neutron diffraction studies reveal the strong rise for one of the reflection peaks with temperature decrease in the same temperature region where ESR spectra transformation occurs. This peak corresponds to double MnSe interplanar distance in the [111] direction what is a period of its magnetic lattice. Magnetic structure of (In,Mn)Se single crystal is discussed