Low-energy electron diffraction study of potassium adsorbed on single-crystal graphite and highly oriented pyrolytic graphite

Potassium adsorption on graphite has been a model system for the understanding of the interaction of alkali metals with surfaces. The geometries of the s232d structure of potassium on both single-crystal graphite (SCG) and highly oriented pyrolytic graphite (HOPG) were investigated for various preparation conditions for graphite temperatures between 55 and 140 K. In all cases, the geometry was found to consist of K atoms in the hollow sites on top of the surface. The K-graphite average perpendicular spacing is 2.79±0.03 Å, corresponding to an average C-K distance of 3.13±0.03 Å, and the spacing between graphite planes is consistent with the bulk spacing of 3.35 Å. No evidence was observed for a sublayer of potassium. The results of dynamical LEED studies for the clean SCG and HOPG surfaces indicate that the surface structures of both are consistent with the truncated bulk structure of graphite

Noble gas films on a decagonal AlNiCo quasicrystal

Thermodynamic properties of Ne, Ar, Kr, and Xe adsorbed on an Al-Ni-Co quasicrystalline surface (QC) are studied with Grand Canonical Monte Carlo by employing Lennard-Jones interactions with parameter values derived from experiments and traditional combining rules. In all the gas/QC systems, a layer-by-layer film growth is observed at low temperature. The monolayers have regular epitaxial fivefold arrangements which evolve toward sixfold close-packed structures as the pressure is increased. The final states can contain either considerable or negligible amounts of defects. In the latter case, there occurs a structural transition from five to sixfold symmetry which can be described by introducing an order parameter, whose evolution characterizes the transition to be continuous or discontinuous as in the case of Xe/QC (first-order transition with associated latent heat). By simulating fictitious noble gases, we find that the existence of the transition is correlated with the size mismatch between adsorbate and substrate's characteristic lengths. A simple rule is proposed to predict the phenomenon.Comment: 19 pages. 8 figures. (color figures can be seen at http://alpha.mems.duke.edu/wahyu/ or http://www.iop.org/EJ/abstract/0953-8984/19/1/016007/

Probing Mechanical Properties of Graphene with Raman Spectroscopy

The use of Raman scattering techniques to study the mechanical properties of graphene films is reviewed here. The determination of Gruneisen parameters of suspended graphene sheets under uni- and bi-axial strain is discussed and the values are compared to theoretical predictions. The effects of the graphene-substrate interaction on strain and to the temperature evolution of the graphene Raman spectra are discussed. Finally, the relation between mechanical and thermal properties is presented along with the characterization of thermal properties of graphene with Raman spectroscopy.Comment: To appear in the Journal of Materials Scienc

Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy

The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substrate plays a crucial role in determining the physical properties of graphene, and hence its effect must be accounted for in the interpretation of experimental data taken at cryogenic or elevated temperatures.Comment: 17 pagese, 3 figures, and supporting information (4 pages, 3 figures); Nano Letters, 201

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.Comment: 13 pages including supplimental material. Submitted to Nature Materials 2/23/200

Compression Behavior of Single-layer Graphene

Central to most applications involving monolayer graphene is its mechanical response under various stress states. To date most of the work reported is of theoretical nature and refers to tension and compression loading of model graphene. Most of the experimental work is indeed limited to bending of single flakes in air and the stretching of flakes up to typically ~1% using plastic substrates. Recently we have shown that by employing a cantilever beam we can subject single graphene into various degrees of axial compression. Here we extend this work much further by measuring in detail both stress uptake and compression buckling strain in single flakes of different geometries. In all cases the mechanical response is monitored by simultaneous Raman measurements through the shift of either the G or 2D phonons of graphene. In spite of the infinitely small thickness of the monolayers, the results show that graphene embedded in plastic beams exhibit remarkable compression buckling strains. For large length (l)-to-width (w) ratios (> 0.2) the buckling strain is of the order of -0.5% to -0.6%. However, for l/w <0.2 no failure is observed for strains even higher than -1%. Calculations based on classical Euler analysis show that the buckling strain enhancement provided by the polymer lateral support is more than six orders of magnitude compared to suspended graphene in air

Rapid, direct and non-destructive assessment of fossil organic matter via microRaman spectroscopy

Raman spectroscopy is widely used to evaluate the nature and potential origins of carbonaceous matter in Earth's oldest rocks and minerals. It is also the tool that will be used for organic detection on the next vehicles to remotely explore the surface of Mars. Here we present, for the first time, a novel quantitative method in which previously neglected Raman spectral features are correlated directly, linearly, and with excellent accuracy, to the microchemistry of carbonaceous materials through the elemental H:C ratio, regardless of contamination. We show applicability and predictive capabilities of this methodology in evaluating H:C ratios between 0.01 and 0.65 in Archean and type III kerogens. We demonstrate its application to chemical microRaman mapping by statistical analysis of a 750Ma microfossil and its encompassing sediments. Raman-derived H:C data can also be used to estimate the degree to which kerogen C-isotopic data has been shifted from its original values due to the effects of metamorphism. The new methodology directly and non-invasively affords spatially resolved assessments of organic matter preservation and microscale chemical diversity within any geologically preserved terrestrial or extraterrestrial sample, including in the use of organic matter in technological applications

Dynamical low-energy electron diffraction study of graphite (0001)-(√3×√3)R30°-Xe

Dynamical low-energy electron diffraction (LEED) was used to study the structures of graphite (0 0 0 1) and graphite (0 0 0 1)-ðp3 " p3ÞR30!-Xe. Natural single crystals of graphite were used in these studies, and their surface structure was found to be the same as the bulk structure. The adsorbed Xe was found to occupy the hollow sites of the honeycomb substrate at a distance of 3.59± 0.04 !AA above the graphite plane