Superlattice barrier varactors

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented

Active Temporal Multiplexing of Photons

Photonic qubits constitute a leading platform to disruptive quantum technologies due to their unique low-noise properties. The cost of the photonic approach is the non-deterministic nature of many of the processes, including single-photon generation, which arises from parametric sources and negligible interaction between photons. Active temporal multiplexing - repeating a generation process in time and rerouting to single modes using an optical switching network - is a promising approach to overcome this challenge and will likely be essential for large-scale applications with greatly reduced resource complexity and system sizes. Requirements include the precise synchronization of a system of low-loss switches, delay lines, fast photon detectors, and feed-forward. Here we demonstrate temporal multiplexing of 8 'bins' from a double-passed heralded photon source and observe an increase in the heralding and heralded photon rates. This system points the way to harnessing temporal multiplexing in quantum technologies, from single-photon sources to large-scale computation.Comment: Minor revision

Theory of noise suppression in {\Lambda}-type quantum memories by means of a cavity

Quantum memories, capable of storing single photons or other quantum states of light, to be retrieved on-demand, offer a route to large-scale quantum information processing with light. A promising class of memories is based on far-off-resonant Raman absorption in ensembles of $\Lambda$-type atoms. However at room temperature these systems exhibit unwanted four-wave mixing, which is prohibitive for applications at the single-photon level. Here we show how this noise can be suppressed by placing the storage medium inside a moderate-finesse optical cavity, thereby removing the main roadblock hindering this approach to quantum memory.Comment: 10 pages, 3 figures. This paper provides the theoretical background to our recent experimental demonstration of noise suppression in a cavity-enhanced Raman-type memory ( arXiv:1510.04625 ). See also the related paper arXiv:1511.05448, which describes numerical modelling of an atom-filled cavity. Comments welcom

High-speed noise-free optical quantum memory

Quantum networks promise to revolutionise computing, simulation, and communication. Light is the ideal information carrier for quantum networks, as its properties are not degraded by noise in ambient conditions, and it can support large bandwidths enabling fast operations and a large information capacity. Quantum memories, devices that store, manipulate, and release on demand quantum light, have been identified as critical components of photonic quantum networks, because they facilitate scalability. However, any noise introduced by the memory can render the device classical by destroying the quantum character of the light. Here we introduce an intrinsically noise-free memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We consequently demonstrate for the first time successful storage of GHz-bandwidth heralded single photons in a warm atomic vapour with no added noise; confirmed by the unaltered photon statistics upon recall. Our ORCA memory platform meets the stringent noise-requirements for quantum memories whilst offering technical simplicity and high-speed operation, and therefore is immediately applicable to low-latency quantum networks

InGaAs MOMBE -- system drift and material quality

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/29659/1/0000748.pd

Differences in the photosynthetic response of three tomato cultivars to different salinity sources and their effect on vegetative growth parameters

[EN] Abstract Previous works into photosynthesis regulation under salt stress have focused on the effect of NaCl, although other salts may significantly contribute to the toxicity of saline soils. In this paper, the effects of different salt sources (NaCl, Na2SO4, MgCl2 and MgSO4) on photosynthesis and vegetative growth in three tomato (Solanum lycopersicum L.) cultivars (Marmande RAF, Leader and Daniela) are presented. Differences were found in the net photosynthetic rate and vegetative growth among the studied cultivars and salinity treatments. Cultivar photosynthetic performance related not only to capability for toxic ion exclusion, but also to the maintenance of appropriate essential macronutrient concentrations in leaves. In addition, the role of metabolic and diffusion limitations in regulating photosynthesis varied depending on the studied genotypes. These data, along with variation in biomass and ion distribution in leaves and roots, show that distinct tomato cultivars can address salt tolerance differently, which should be considered when designing strategies to overcome plant sensitivity to salt stress. Highlights ► Photosynthesis and growth were more affected by Na2SO4, MgCl2 and MgSO4 than by NaCl. ► Photosynthetic limitations under salt stress were cultivar-dependent. ► Salinity differentially affected photo-assimilate utilisation among tomato cultivars. ► Salt tolerance has been related to toxic ion exclusion and macroelement homeostasis.This research has been supported by the Spanish Ministry of Education and Science (GEN2006-27772-C2-2-E/VEG). We thank Dr. Jaume Flexas and Dr. Miquel Rivas for their assistance with photosynthetic parameters modelling, and Dr. A. Calatayud for her assistance in the mineral content determinations. We thank Helen Warburton for revising the language in the manuscript.González Nebauer, S.; Sánchez Perales, M.; Martinez, L.; Lluch Gomez, YP.; Renau Morata, B.; Molina Romero, RV. (2013). Differences in the photosynthetic response of three tomato cultivars to different salinity sources and their effect on vegetative growth parameters. Plant Physiology and Biochemistry. 63:61-69. https://doi.org/10.1016/j.plaphy.2012.11.006S61696

InGaAs/InP hot electron transistors grown by chemical beam epitaxy

In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 Å. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with ∼60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70748/2/APPLAB-61-2-189-1.pd