Recent emergence and worldwide spread of the red tomato spider mite, [i]Tetranychus evansi[/i]: genetic variation and multiple cryptic invasions

Publication Inra prise en compte dans l'analyse bibliométrique des publications scientifiques mondiales sur les Fruits, les Légumes et la Pomme de terre. Période 2000-2012. http://prodinra.inra.fr/record/256699Plant biosecurity is increasingly challenged by emerging crop pests. The spider mite Tetranychus evansi has recently emerged as a new threat to solanaceous crops in Africa and the Mediterranean basin, with invasions characterized by a high reproductive output and an ability to withstand a wide range of temperatures. Mitochondrial (868 bp of COI) and nuclear (1,137 bp of ITS) loci were analyzed in T. evansi samples spanning the current geographical distribution to study the earliest stages of the invasive process. The two sets of markers separate the samples into two main clades that are only present together in South America and Southern Europe. The highest COI diversity was found in South America, consistent with the hypothesis of a South American origin of T. evansi. Among the invaded areas, the Mediterranean region displayed a high level of genetic diversity similar to that present in South America, that is likely the result of multiple colonization events. The invasions of Africa and Asia by T. evansi are characterized by a low genetic variation associated with distinct introductions. Genetic data demonstrate two different patterns of invasions: (1) populations in the Mediterranean basin that are a result of multiple cryptic introductions and (2) emerging invasions of Africa and Asia, each likely the result of propagules from one or limited sources. The recent invasions of T. evansi illustrate not only the importance of human activities in the spread of agricultural pests, but also the limits of international quarantine procedures, particularly for cryptic invasion

Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated. In this work, we consider the as-deposited and annealed ZnS thin films at different temperatures. The as-deposited films were amorphous in nature. However, the films annealed at Ta ≥ 673 K, exhibited a hexagonal structure with (002) preferential orientation. The post annealing caused an improvement in crystallinity. The best one was observed at Ta = 723 K. Grain size increased from 7 nm to 25 nm as annealing temperature was increased from 673 K to 723 K. The surface of annealed samples is homogenous and uniform and the rms roughness is dependent on the annealing temperature: it increases with temperature within the range 5–50 nm. The film electrical conductance is found to be dependent on frequency measurement and annealing temperature: the dc conductance exhibits semi-conductor behavior for all ZnS films over the explored range of temperature and the conductance was found to enhance with increasing annealing temperature up to 623 K. In addition, it was observed that the highest conductance and lowest activation energy of ZnS films were obtained at an annealing temperature of 623 K. The mechanism of alternating current ac conductance can be reasonably explained in terms of the overlapping-large polaron tunnelling (OLPT) model for samples annealed at 623 K and 673 K. To our knowledge, this conduction mechanism was rarely found in chalcogenide materials. A significant change of Nyquist plot with annealing temperature was noted permitting the correlation between the microstructure and its electrical properties. The impedance analysis investigated that the relaxation process is well pronounced for the both annealed films at 623 K and 673 K. The dielectric behavior was associated to the polarization effect, an improvement on the dielectric constant ε′ and dielectric loss ε′′ with annealing was noticed.This work was supported by Tunisian Ministry of Higher Education and Scientific Research, Spanish Ministry of Science and Innovation – FEDER Funds (MODENA Project CTQ2016- 79461-R) and Fundaci´on Ram´on Areces (Spain, ProjectCIVP18A3940). NANOMAG group belongs to Galician Competitive Research Group ED431C-2017/22, programme co-funded by FEDER, and AEMAT Strategic Partnership (ED431E-2018/ 08, Xunta de Galicia, Spain).S