Quantum-optical spectroscopy of a two-level system using an electrically driven micropillar laser as a resonant excitation source

Two-level emitters are the main building blocks of photonic quantum technologies and are model systems for the exploration of quantum optics in the solid state. Most interesting is the strict resonant excitation of such emitters to control their occupation coherently and to generate close to ideal quantum light, which is of utmost importance for applications in photonic quantum technology. To date, the approaches and experiments in this field have been performed exclusively using bulky lasers, which hinders the application of resonantly driven two-level emitters in compact photonic quantum systems. Here we address this issue and present a concept for a compact resonantly driven single-photon source by performing quantum-optical spectroscopy of a two-level system using a compact high-β microlaser as the excitation source. The two-level system is based on a semiconductor quantum dot (QD), which is excited resonantly by a fiber-coupled electrically driven micropillar laser. We dress the excitonic state of the QD under continuous wave excitation, and trigger the emission of single photons with strong multi-photon suppression (g(2)(0)=0.02) and high photon indistinguishability (V = 57±9%) via pulsed resonant excitation at 156 MHz. These results clearly demonstrate the high potential of our resonant excitation scheme, which can pave the way for compact electrically driven quantum light sources with excellent quantum properties to enable the implementation of advanced quantum communication protocols.EC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISITEDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

Spontaneous emission enhancement in strain-induced WSe2 monolayer based quantum light sources on metallic surfaces

Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on creation of strain induced single photon sources using a WSe2 monolayer on a silver substrate, coated with a very thin dielectric layer. We identify quantum emitters which are formed at various locations in the sample. The emission is highly linearly polarized, stable in linewidth and decay times down to 300 ps are observed. We provide numerical calculations of our monolayer-metal device platform to assess the strength of the radiative decay rate enhancement by the presence of the plasmonic structure. We believe, that our results represent a crucial step towards the ultra-compact integration of high performance single photon sources in nanoplasmonic devices and circuits

Tunable nano-plasmonic photodetectors

Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent resonances. Also, additional functionality, like electronic responsivity switching and polarization detection have been realized. However, previous devices consisted of large arrays of nanostructures to achieve detectable photocurrents. Here we show that this concept can be scaled down to a single antenna level, resulting in detector dimensions well below the resonance wavelength of the device. Our design consists of a single electrically-connected plasmonic nanoantenna covered with a wide-bandgap semiconductor allowing broadband photodetection in the VIS/NIR via injection of hot carriers. We demonstrate electrical switching of the color sensitivity as well as polarization detection. Our results hold promise for the realization of ultra small, highly integratable photodetectors with advanced functionality.Comment: 8 pages, 4 figure

Efficient stray-light suppression for resonance fluorescence in quantum dot-micropillars using self-aligned metal apertures

Within this work we propose and demonstrate a technological approach to efficiently suppress excitation laser stray-light in resonance fluorescence experiments on quantum dot-micropillars. To ensure efficient stray-light suppression, their fabrication process includes a planarization step and the subsequent covering with a titanium mask to fabricate self-aligned apertures at the micropillar positions. These apertures aim at limiting laser straylight in side-excitation vertical-detection configuration, while enabling detection of the optical signal through the top facet of the micropillars. Beneficial effects of these apertures are proven and quantitatively evaluated within a statistical study in which we determine and compare the stray-light suppression of 48 micropillars with and without metal apertures. Actual resonance fluorescence experiments on single quantum dots coupled to the cavity mode prove the relevance of the proposed approach and demonstrate that it will foster further studies on cavity quantum electrodynamics phenomena under coherent optical excitation.PostprintPeer reviewe

Site-selective functionalization of in-plane nanoelectrode-antennas

Stacked organic optoelectronic devices make use of electrode materials with different work functions, leading to efficient large area light emission. In contrast, lateral electrode arrangements offer the possibility to be shaped as resonant optical antennas, radiating light from subwavelength volumes. However, tailoring electronic interface properties of laterally arranged electrodes with nanoscale gaps - to e.g. optimize charge-carrier injection - is rather challenging, yet crucial for further development of highly efficient nanolight sources. Here, we demonstrate site-selective functionalization of laterally arranged micro- and nanoelectrodes by means of different self-assembled monolayers. Upon applying an electric potential across nanoscale gaps, surface-bound molecules are removed selectively from specific electrodes by oxidative desorption. Kelvin-probe force microscopy as well as photoluminescence measurements are employed to verify the success of our approach. Moreover, we obtain asymmetric current-voltage characteristics for metal-organic devices in which just one of the electrodes is coated with 1-octadecanethiol; further demonstrating the potential to tune interface properties of nanoscale objects. Our technique paves the way for laterally arranged optoelectronic devices based on selectively engineered nanoscale interfaces and in principle enables molecular assembly with defined orientation in metallic nano-gaps

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

The authors are grateful for financial support by the state of Bavaria, the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.PostprintPeer reviewe

Izvješće o radu za 2003. godinu

The authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B).Mid‐infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p‐type doped AlAsSb/GaSb double‐barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak‐to‐valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice‐matched quaternary low‐bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with infrared light, photogenerated minority electrons within the absorption layer can drift toward the DBQW, where they accumulate and cause a shift of the current–voltage characteristics toward smaller bias voltages, which can be exploited to measure the incident MIR light power. In a tunable diode laser absorption spectroscopy experiment, the RTD photodetector is used to identify three distinct water absorption lines in the MIR close to λ = 2.61 μm. By adjusting the absorption layer doping concentration, the RTD quantum efficiency can be increased by a factor of 10, resulting in a sensitivity of S = 2.71 A W−1, which corresponds to an estimated multiplication factor of M = 8.6.PostprintPeer reviewe