165 research outputs found
Band-to-band transitions, selection rules, effective mass and exciton binding energy parameters in monoclinic \beta-Ga2O3
We employ an eigen polarization model including the description of direction
dependent excitonic effects for rendering critical point structures within the
dielectric function tensor of monoclinic \beta-Ga2O3 yielding a comprehensive
analysis of generalized ellipsometry data obtained from 0.75 eV--9 eV. The
eigen polarization model permits complete description of the dielectric
response, and we obtain single-electron and excitonic band-to-band transition
anisotropic critical point structure model parameters including their
polarization eigenvectors within the monoclinic lattice. We compare our
experimental analysis with results from density functional theory calculations
performed using a recently proposed Gaussian-attenuation-Perdue-Burke-Ernzerhof
hybrid density functional, and we present and discuss the order of the
fundamental direct band-to-band transitions and their polarization selection
rules, the electron and hole effective mass parameters for the three lowest
band-to-band transitions, and their exciton binding energy parameters, in
excellent agreement with our experimental results. We find that the effective
masses for holes are highly anisotropic and correlate with the selection rules
for the fundamental band-to-band transitions, where the observed transitions
are polarized closely in the direction of the lowest hole effective mass for
the valence band participating in the transition
Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
We have used positron annihilation spectroscopy to study the thermal behavior of different native vacancy defects typical of freestanding GaN grown by hydride vapor phase epitaxy under high pressure annealing at different annealing temperatures. The results show that the VGa‐ON pairs dissociate and the Ga vacancies anneal out from the bulk of the material at temperatures 1500–1700K. A binding energy of Eb=1.6(4)eV can be determined for the pair. Thermal formation of Ga vacancies is observed at the annealing temperatures above 1700K, indicating that Ga vacancies are created thermally at the high growth temperature, but their ability to form complexes such as VGa‐ON determines the fraction of vacancy defects surviving the cooling down. The formation energy of the isolated Ga vacancy is experimentally determined.Peer reviewe
Delay and distortion of slow light pulses by excitons in ZnO
Light pulses propagating through ZnO undergo distortions caused by both bound
and free excitons. Numerous lines of bound excitons dissect the pulse and
induce slowing of light around them, to the extend dependent on their nature.
Exciton-polariton resonances determine the overall pulse delay and attenuation.
The delay time of the higher-energy edge of a strongly curved light stripe
approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the
data of cw and time-of-flight spectroscopies has enabled us to determine the
excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on
these parameters induced by the light attenuation, as well as a discrepancy
between the parameters characterizing the surface and internal regions of the
crystal.Comment: 4 pages, 4 figure
Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level
2 páginas, 3 figuras.Pure photoluminescence spectra originating from a single InAs/GaAs quantum dot, which is small enough to possess only one single-electron level, are demonstrated. A symmetric fine structure of the exciton and the biexciton is observed.Peer reviewe
Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy (HVPE)growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-μm-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopyimages show the dislocation density of the free-standing HVPE-GaN to be ∼2.5×10 exp 7 cm exp −2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8×10 exp 15 cm exp−3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 (3.4712) eV and 3.4721 (3.4718) eV for the Ga- (N-) polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E1(TO) phonon mode position measured at 558.52 cm exp −1 (Ga face) by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.Peer reviewe
Self-directed growth of AlGaAs core-shell nanowires for visible light applications
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy
system on GaAs(111)B substrates. Micro-photoluminescence measurements and
energy dispersive X-ray spectroscopy indicated a core-shell structure and Al
composition gradient along the NW axis, producing a potential minimum for
carrier confinement. The core-shell structure formed during the growth as a
consequence of the different Al and Ga adatom diffusion lengths.Comment: 20 pages, 7 figure
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