In-Plane Anisotropic Faceting of Ultralarge and Thin Single-Crystalline Colloidal SnS Nanosheets

The colloidal synthesis of large thin two-dimensional (2D) nanosheets is fascinating but challenging, since the growth along the lateral and vertical dimensions need to be controlled independently. In-plane anisotropy in 2D nanosheets is attracting more attention as well. We present a new synthesis for large colloidal single-crystalline SnS nanosheets with the thicknesses down to 7 nm and lateral sizes up to 8 um. The synthesis uses trioctylphosphine-S (TOP-S) as sulfur source and oleic acid (with or without TOP) as ligands. Upon adjusting the capping ligand amount, the growth direction can be switched between anisotropic directions (armchair and zigzag) and isotropic directions ("ladder" directions), leading to an edge-morphology anisotropy. This is the first report on solution-phase synthesis of large thin SnS NSs with tunable edge faceting. Furthermore, electronic transport measurements show strong dependency on the crystallographic directions confirming structural anisotropy.Comment: 14 pages, 4 figure

Anisotropic circular photogalvanic effect in colloidal tin sulfide nanosheets

Tin sulfide promises very interesting properties such as a high optical absorption coefficient and a small band gap, while being less toxic compared to other metal chalcogenides. However, the limitations in growing atomically thin structures of tin sulfide hinder the experimental realization of these properties. Due to the flexibility of the colloidal synthesis, it is possible to synthesize very thin and at the same time large nanosheets. Electrical transport measurements show that these nanosheets can function as field-effect transistors with high on/off ratio and p-type behavior. The temperature dependency of the charge transport reveals that defects in the crystal are responsible for the formation of holes as majority carriers. During illumination with circularly polarized light, these crystals generate a helicity dependent photocurrent at zero-volt bias, since their symmetry is broken by asymmetric interfaces (substrate and vacuum). Further, the observed circular photogalvanic effect shows a pronounced in-plane anisotropy, with a higher photocurrent along the armchair direction, originating from the higher absorption coefficient in this direction. Our new insights show the potential of tin sulfide for new functionalities in electronics and optoelectronics, for instance as polarization sensors.Comment: 16 pages, 3 figure

High‐Performance n‐ and p‐Type Field‐Effect Transistors Based on Hybridly Surface‐Passivated Colloidal PbS Nanosheets

Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they are conveniently producible through the colloidal approach while having the advantages of two-dimensionality. In order to employ these materials, according transistor behavior should be adjustable and of high performance. We show that the transistor performance of colloidal lead sulfide nanosheets is tunable by altering the surface passivation, the contact metal, or by exposing them to air. We found that adding halide ions to the synthesis leads to an improvement of the conductivity, the field-effect mobility, and the on/off ratio of these transistors by passivating their surface defects. Superior n-type behavior with a field-effect mobility of 248 cm^2V^-1s^-1 and an on/off ratio of 4×10^6 is achieved. The conductivity of these stripes can be changed from n-type to p-type by altering the contact metal and by adding oxygen to the working environment. As a possible solution for the post-Moore era, realizing new high quality semiconductors such as colloidal materials is crucial. In this respect, our results can provide new insights which helps to accelerate their optimization for potential applications

Function Follows Form: From Semiconducting to Metallic toward Superconducting PbS Nanowires by Faceting the Crystal

In the realm of colloidal nanostructures, with its immense capacity for shape and dimensionality control, the form is undoubtedly a driving factor for the tunability of optical and electrical properties in semiconducting or metallic materials. However, influencing the fundamental properties is still challenging and requires sophisticated surface or dimensionality manipulation. In this work, we present such a modification for the example of colloidal lead sulphide nanowires. We show that the electrical properties of lead sulphide nanostructures can be altered from semiconducting to metallic with indications of superconductivity, by exploiting the flexibility of the colloidal synthesis to sculpt the crystal and to form different surface facets. A particular morphology of lead sulphide nanowires has been synthesized through the formation of {111} surface facets, which shows metallic and superconducting properties in contrast to other forms of this semiconducting crystal, which contain other surface facets ({100} and {110}). This effect, which has been investigated with several experimental and theoretical approaches, is attributed to the presence of lead rich {111} facets. The insights promote new strategies for tuning the properties of crystals as well as new applications for lead sulphide nanostructures.Comment: 23 pages, 6 figure

Novel TMR sensor functionalities via oblique-incidence deposition

Tailoring magnetic properties of ultra-thin films remains one of the main issues forfurther innovations in tunnel magnetoresistive (TMR) sensor applications. The magnetic response insuch devices is mostly governed by an extension of the primary TMR trilayer with a selection of suitablecontact materials. The transfer of magnetic anisotropy to the ferromagnetic electrodes, e.g. CoFeBlayers, results in a field-dependent TMR response that is determined but also limited by the magneticproperties of CoFeB and the contact materials. We flexibly apply oblique-incidence deposition (OID)to introduce arbitrary intrinsic in-plane anisotropy profiles into the primary TMR trilayer. The OIDinduced anisotropy shapes its magnetic response and eliminates the requirement of additional magneticcontact materials. Functional control is achieved via the adjustable shape anisotropy that can beselectively configured to the ultra-thin CoFeB layers. This approach removes former limitations andallows the design of new sensing functionalities that can be precisely customized to the specificapplication, even in the high field regime. Even though this striking gain in functional TMR designcapabilities is based on an anisotropic interfacial roughness, the resulting sensors maintain the typicalTMR signal strength as well as superb thermal stability of the tunnel junction

Novel Tunnel Magnetoresistive Sensor Functionalities via Oblique-Incidence Deposition

Controlling the magnetic properties of ultrathin films remains one of the main challenges to the further development of tunnel magnetoresistive (TMR) device applications. The magnetic response in such devices is mainly governed by extending the primary TMR trilayer with the use of suitable contact materials. The transfer of magnetic anisotropy to ferromagnetic electrodes consisting of CoFeB layers results in a field-dependent TMR response, which is determined by the magnetic properties of the CoFeB as well as the contact materials. We flexibly apply oblique-incidence deposition (OID) to introduce arbitrary intrinsic in-plane anisotropy profiles into the magnetic layers. The OID-induced anisotropy shapes the magnetic response and eliminates the requirement of additional magnetic contact materials. Functional control is achieved via an adjustable shape anisotropy that is selectively tailored for the ultrathin CoFeB layers. This approach circumvents previous limitations on TMR devices and allows for the design of new sensing functionalities, which can be precisely customized to a specific application, even in the high field regime. The resulting sensors maintain the typical TMR signal strength as well as a superb thermal stability of the tunnel junction, revealing a striking advantage in functional TMR design using anisotropic interfacial roughness

From Dots to Stripes to Sheets: Shape Control of Lead Sulfide Nanostructures

Controlling anisotropy in nanostructures is a challenging but rewarding task because confinement in one or more dimensions influences the physical and chemical properties of the items decisively. In particular, semiconducting nanostructures can be tailored to gain optimized properties to work as transistors or absorber material in solar cells. We demonstrate that the shape of colloidal lead sulfide nanostructures can be tuned from spheres to stripes to sheets by means of the precursor concentrations, the concentration of a chloroalkane coligand and the synthesis temperature. All final structures still possess at least one dimension in confinement. The structures cover all dimensionalities from 0D to 3D. Additionally, the effect of temperature on the shape and thickness of PbS nanosheets is shown and electrical transport measurements complement the findings

The Prevalence of Hepatitis B Virus Surface Antigen (HBsAg) Variations and Correlation with the Clinical and Serologic Pictures in Chronic Carriers from Khorasan Province, North-East of Iran

This study was designed to determine the correlation of hepatitis B virus surface Ag (HBsAg) variations with the clinical/serological pictures among chronic HBsAg positive patients. The surface gene (S-gene) was amplified and directly sequenced in twenty-five patients. Eight samples (group I) contained at least one mutation at the amino acid level. Five showed alanine aminotransferase (ALT) levels above the normal range of which only one sample was anti-HBe positive. Group II (17 samples) did not contain any mutation, 4 were anti-HBe positive and 9 had increased ALT levels. In both groups, from a total of 18 mutations, 5 (27.5%) and 13 (72.5%) occurred in anti-HBe and HBeAg positive groups respectively. The small number of amino acid mutations might belong to either the initial phase of chronicity in our patients; or that even in anti-HBe positive phase in Iranian genotype D-infected patients, a somehow tolerant pattern due to the host genetic factors may be responsible