668 research outputs found
Heterojunction solar cell calculations
Solar cell efficiencies computed for semiconductor heterojunction cell
Studies of heteroface solar cell performance
The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968
Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge
Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970
Fabrication problems and device characteristics of ZnSe-GaAs and Ge-GaAs heterojunction
Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunction
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu
The fire behaviour of gypsum boards incorporating phase change materials for energy storage in building applications
Bias-Dependent Generation and Quenching of Defects in Pentacene
We describe a defect in pentacene single crystals that is created by bias
stress and persists at room temperature for an hour in the dark but only
seconds with 420nm illumination. The defect gives rise to a hole trap at Ev +
0.38eV and causes metastable transport effects at room temperature. Creation
and decay rates of the hole trap have a 0.67eV activation energy with a small
(108 s-1) prefactor, suggesting that atomic motion plays a key role in the
generation and quenching process.Comment: 10 pages, 3 figure
Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density
The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher
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