Morphology of the recently re-classified Tasman masked booby (Sula dactylatra tasmani) breeding on the Kermadec Islands

Once thought to be extinct, the Tasman Booby Sula tasmani has recently been re-classified as a subspecies of the Masked Booby S. dactylatra on the basis of genetic data. This re-classification raises the issue of whether this novel clade has a distinct morphology. Morphological differences in size, as well as coloration of integuments, bill and iris have been found in other subspecies of the Masked Booby but have not yet been reported for live Kermadec Islands breeding individuals. Museum specimens from this breeding location have been separated from other Pacific breeding subspecies by their longer wings. We sampled a total of 21 individuals from North Meyer Islet, Kermadec Group, New Zealand, and applied molecular sexing to obtain sex-specific morphometric measurements. We matched dimorphism in vocalization with genetic sexing results and photographic documentation of human-assessed bill, foot and eye coloration. While culmen measurements were consistent with reports from museum specimens, wing chords from living specimens of Tasman Masked Boobies were 3% and 4% larger in males and females, respectively. Females had larger culmens and wings than males, consistent with the low extent of sexual dimorphism reported from museum skins. Adult Tasman Masked Boobies had yellow to buff-yellow feet, while fledglings, as in most sulids, had grey to greyish-yellow feet. Our findings confirm the distinctively long wing and particular iris coloration previously reported for the taxon and provide the first description of integument coloration of live specimens. This study highlights the importance of including in situ assessment in taxon descriptions

Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips

Green human resource management: a comparative qualitative case study of a United States multinational corporation

This article explores the ways in which a multinational company (MNC) approaches Green Human Resource Management (HRM) in its British, German and Swedish subsidiaries. The authors analyze the similarities and differences in Green HRM approaches in these three European subsidiaries of a US restaurant chain. This enables the comparison of Green HRM practises and behaviors, and considers the factors that influence the subsidiaries in this particular domain. Therefore, this research addresses the current lack of international comparative research in the field of Green HRM. The methodological approach is multi-case study with 50 participants, using semi-structured interviews and focus groups. The results show evidence of pro-active environmental management, reflected through a range of operational and people-centred initiatives across the three European countries. Although there is an overarching commitment to environmental sustainability, the positioning and alignment of the environment and HR function differ amongst the subsidiaries, as does the way in which the subsidiaries choose to engage the workforce in environmental sustainability. The study identified a number of factors which explain the differences in approach including, amongst others, strategic and performance drivers and cultural dimensions, such as relationships with key stakeholders

Data management of nanometre­ scale CMOS device simulations

In this paper we discuss the problems arising in managing and curating the data generated by simulations of nanometre scale CMOS (Complementary Metal–Oxide Semiconductor) transistors, circuits and systems and describe the software and operational techniques we have adopted to address them. Such simulations pose a number of challenges including, inter alia, multi­TByte data volumes, complex datasets with complex inter-relations between datasets, multi­-institutional collaborations including multiple specialisms and a mixture of academic and industrial partners, and demanding security requirements driven by commercial imperatives. This work was undertaken as part of the NanoCMOS project. However, the problems, solutions and experience seem likely to be of wider relevance, both within the CMOS design community and more generally in other disciplines

The ethos of action learning within a virtual Reflective Practice Forum: an account of practice drawing connections between action learning, community of practice and supervision frameworks

As Action Learning has evolved, it has been adapted to promote learning in various contexts. In this account of practice, we share our perspectives as facilitators of the application of action learning principles within Reflective Practice Forums for Mentoring and Coaching Programme Managers. The ethos of action learning was adopted with the forums to enable the programme managers to engage in regular reflections of their current practices and ongoing professional development. In our assessment of the application of action learning principles and processes within the Reflective Practice Forums, we consider the connections between action learning, communities of practice and supervision frameworks to examine and present the ‘ethos’ of Action Learning within the forums

2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application

Traditional memory devices are facing more challenges due to continuous down-scaling. 6T-SRAM suffers from variability [1-2] and reliability [3-4] issues, which introduce cell stability problems. DRAM cells with one transistor, one capacitor (1T1C) struggle to maintain refresh time [5-6]. Efforts have been made to find new memory solutions, such as one transistor (1T) solutions [7-9]. Floating body based memory structures are among the potential candidates, but impact ionization or band-to-band tunnelling (B2BT) limits their refresh time [10]. A recently proposed zero impact ionization and zero subthreshold swing device named Z2FET [9, 11-12] has been demonstrated and is a promising candidate for 1T DRAM memory cell due to technology advantages such as CMOS technology compatibility, novel capacitor-less structure and sharp switching characteristics. In the Z2FET memory operation, refresh frequency is determined by data retention time. Previous research [11-12] is lacking systematic simulation analysis and understanding on the underlying mechanisms. In this paper, we propose a new simulation methodology to accurately extract retention time in Z2FET devices and understand its dependency on applied biases, temperatures and relevant physical mechanisms. Since the stored ‘1’ state in Z2FET is an equilibrium state [9, 11-12] and there is no need to refresh, we will concentrate on state ‘0’ retention. Two types of ‘0’ retention time: HOLD ‘0’ and READ ‘0’ retention time will be discussed separately

Secure, performance-oriented data management for nanoCMOS electronics

The EPSRC pilot project Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is focused upon delivering a production level e-Infrastructure to meet the challenges facing the semiconductor industry in dealing with the next generation of ‘atomic-scale’ transistor devices. This scale means that previous assumptions on the uniformity of transistor devices in electronics circuit and systems design are no longer valid, and the industry as a whole must deal with variability throughout the design process. Infrastructures to tackle this problem must provide seamless access to very large HPC resources for computationally expensive simulation of statistic ensembles of microscopically varying physical devices, and manage the many hundreds of thousands of files and meta-data associated with these simulations. A key challenge in undertaking this is in protecting the intellectual property associated with the data, simulations and design process as a whole. In this paper we present the nanoCMOS infrastructure and outline an evaluation undertaken on the Storage Resource Broker (SRB) and the Andrew File System (AFS) considering in particular the extent that they meet the performance and security requirements of the nanoCMOS domain. We also describe how metadata management is supported and linked to simulations and results in a scalable and secure manner