STUDIES REGARDING THE DETERMINATION OF THE ADEQUATE ASSEMBLY TOLERANCES DEPENDING ON THE MANUFACTURING COSTS OF THE PARTS PROCESSED ON CLASSIC MACHINE TOOLS

The paper deals with a study case regarding the determination of adequate assembly tolerances. The study concerned the assembly of two bearings on an axle. Determining the adequate tolerances of the sizes chains is based on Lagrange’s multipliers use. The optimization criterion for determining the assembly tolerances is the minimization of the product achievement cost. The relation between tolerances and cost will be revealed in a graphic componen

Optimal Control Applications in the Study of Production Management

A mathematical model for an economic problem of production management is proposed. The continuous optimal control problem is solved, by using the Pontryagin Maximum Principle at the level of a new space, called Lie algebroid. The controllability of the economic system is studied by using Lie geometric methods and involves restrictions on the final stock quantities. Finally, a numerical application is given

Antiinflammatory Therapy with Canakinumab for Atherosclerotic Disease

Background: Experimental and clinical data suggest that reducing inflammation without affecting lipid levels may reduce the risk of cardiovascular disease. Yet, the inflammatory hypothesis of atherothrombosis has remained unproved. Methods: We conducted a randomized, double-blind trial of canakinumab, a therapeutic monoclonal antibody targeting interleukin-1β, involving 10,061 patients with previous myocardial infarction and a high-sensitivity C-reactive protein level of 2 mg or more per liter. The trial compared three doses of canakinumab (50 mg, 150 mg, and 300 mg, administered subcutaneously every 3 months) with placebo. The primary efficacy end point was nonfatal myocardial infarction, nonfatal stroke, or cardiovascular death. RESULTS: At 48 months, the median reduction from baseline in the high-sensitivity C-reactive protein level was 26 percentage points greater in the group that received the 50-mg dose of canakinumab, 37 percentage points greater in the 150-mg group, and 41 percentage points greater in the 300-mg group than in the placebo group. Canakinumab did not reduce lipid levels from baseline. At a median follow-up of 3.7 years, the incidence rate for the primary end point was 4.50 events per 100 person-years in the placebo group, 4.11 events per 100 person-years in the 50-mg group, 3.86 events per 100 person-years in the 150-mg group, and 3.90 events per 100 person-years in the 300-mg group. The hazard ratios as compared with placebo were as follows: in the 50-mg group, 0.93 (95% confidence interval [CI], 0.80 to 1.07; P = 0.30); in the 150-mg group, 0.85 (95% CI, 0.74 to 0.98; P = 0.021); and in the 300-mg group, 0.86 (95% CI, 0.75 to 0.99; P = 0.031). The 150-mg dose, but not the other doses, met the prespecified multiplicity-adjusted threshold for statistical significance for the primary end point and the secondary end point that additionally included hospitalization for unstable angina that led to urgent revascularization (hazard ratio vs. placebo, 0.83; 95% CI, 0.73 to 0.95; P = 0.005). Canakinumab was associated with a higher incidence of fatal infection than was placebo. There was no significant difference in all-cause mortality (hazard ratio for all canakinumab doses vs. placebo, 0.94; 95% CI, 0.83 to 1.06; P = 0.31). Conclusions: Antiinflammatory therapy targeting the interleukin-1β innate immunity pathway with canakinumab at a dose of 150 mg every 3 months led to a significantly lower rate of recurrent cardiovascular events than placebo, independent of lipid-level lowering. (Funded by Novartis; CANTOS ClinicalTrials.gov number, NCT01327846.

ETUDE DES DEFAUTS INDUITS LORS DE L'INTEGRATION DES TRANSISTORS BIPOLAIRES A HETEROJONCTION SI/SIGE DANS UNE TECHNOLOGIE BICMOS AVANCEE

LE TRANSISTOR BIPOLAIRES A HETEROJONCTION SI/SIGE PERMET D'ETENDRE LE DOMAINE D'UTILISATION DES TECHNOLOGIES INTEGREES SUR SILICIUM VERS DES APPLICATIONS POUR LES TELECOMMUNICATIONS RAPIDES. EN EFFET, LES PROGRES TECHNOLOGIQUES ONT PERMIS L'UTILISATION DE L'ALLIAGE SILICIUM-GERMANIUM (CONTRAINT SUR SILICIUM) COMME BASE DU TRANSISTOR BIPOLAIRE. L'OBTENTION DES FILIERES TECHNOLOGIQUES STABLES ET BIEN MAITRISEES, INTEGRANT L'ALLIAGE SILICIUM-GERMANIUM, EST UN ELEMENT MAJEUR POUR LE MISE EN PRODUCTION DE CE TYPE DE TRANSISTORS. LA POSSIBILITE DE DEVELOPPER UNE FILIERE BICMOS (ASSOCIATION DANS UNE MEME PUCE DES TRANSISTORS BIPOLAIRES ET MOS) INTEGRANT LES TRANSISTORS BIPOLAIRES A HETEROJONCTION SI/SIGE OFFRE DES NOMBREUX AVANTAGES : PERFORMANCES DYNAMIQUES ELEVEES, FAIBLE COUT, FAIBLE CONSOMMATION, HAUTE DENSITE D'INTEGRATION. NOTRE OBJECTIF A ETE DE CARACTERISER ELECTRIQUEMENT DES TRANSISTORS BIPOLAIRES A HETEROJONCTION SI/SIGE DANS LE BUT D'IDENTIFIER LES EFFETS PARASITES QUI PEUVENT PENALISER LES PERFORMANCES STATIQUES ET DYNAMIQUES DE CES TRANSISTORS. CETTE ETUDE COMPORTE DEUX PARTIES PRINCIPALES. DANS UN PREMIER TEMPS, LES CARACTERISTIQUES COURANT-TENSION STATIQUES NOUS ONT PERMIS D'IDENTIFIER LES PROCESSUS PHYSIQUES DE CONDUCTION AUX JONCTIONS EMETTEUR-BASE ET BASE-COLLECTEUR EN FONCTION DE LA TEMPERATURE ET DE LA TENSION DE POLARISATION. NOUS AVONS AINSI OBSERVE QUE CES CARACTERISTIQUES SONT DEGRADEES PAR LA PRESENCE DE CENTRES PROFONDS. ENSUITE, PAR DES MESURES DE TRANSITOIRE DE CAPACITE ET DE BRUIT TELEGRAPHIQUE, NOUS AVONS CARACTERISER CES DEFAUTS PROFONDS DANS LE BUT DE DETERMINER LEUR LOCALISATION SPATIALE ET PROPRIETES PHYSIQUES (ENERGIE D'ACTIVATION, SECTION EFFICACE DE CAPTURE). CES ETUDES NOUS ONT PERMIS DE METTRE EN EVIDENCE L'EFFET DES DEFAUTS PROFONDS SUR LES CARACTERISTIQUES STATIQUES OU SUR LES PERFORMANCES DE BRUIT BASSES FREQUENCES, AINSI QUE D'INDIQUER LES ETAPES TECHNOLOGIQUES QUI SONT A LEUR ORIGINE.VILLEURBANNE-DOC'INSA LYON (692662301) / SudocSudocFranceF

Lie Geometric Methods in the Study of Driftless Control Affine Systems with Holonomic Distribution and Economic Applications

In the present paper, two optimal control problems are studied using Lie geometric methods and applying the Pontryagin Maximum Principle at the level of a new working space, called Lie algebroid. It is proved that the framework of a Lie algebroid is more suitable than the cotangent bundle in order to find the optimal solutions of some driftless control affine systems with holonomic distributions. Finally, an economic application is given

Caractérisation, modélisation et fiabilité des diélectriques de grille à base de HfO2 pour les futures technologies CMOS

La miniaturisation des transistors CMOS permet d améliorer les performances, la densité d intégration et les coûts des composants électroniques. Cependant, cette course à la miniaturisation a atteint ses limites, et l intégration d un oxyde de grille à haute permittivité pour remplacer l oxyde thermique classique est devenue incontournable. L oxyde d hafnium a été choisi pour successeur à l oxyde SiO2. Son introduction vise à limiter les courants de fuite, mais une incertitude demeure du point de vue de la fiabilité car elle est directement liée à la qualité de l interface oxyde/canal et à la charge injectée et piégée dans l oxyde de grille. Ce travail de thèse s inscrit dans ce contexte. Afin de garantir la fiabilité de ces nouveaux dispositifs, la caractérisation et la modélisation des défauts préexistant dans l empilement de grille et les mécanismes de conduction à travers l isolant de grille ont été étudiés. Les mécanismes de génération de défauts sous contrainte PBTI ont également été étudiés et discutés. La compréhension des phénomènes physiques pouvant influencer la fiabilité est primordiale pour l intégration des oxydes high-kThe downscaling of CMOS transistors has yielded better device performances, improved integration densities and driven down the average price of electronic devices. As of today, however, the enduring push toward miniaturization has hit a performance wall, where it becomes necessary to replace the traditional thermal gate oxide with a high-permittivity one. The semiconductor industry has chosen hafnium oxide as the best candidate to replace SiO2. Although hafnium oxide is effective at reducing gate leakage currents, its integration poses new challenges concerning device reliability, which is related to the oxide/channel interface and to the charge injected and trapped in the gate oxide. This work aims to investigate these points. In order to ensure that hafnium oxide-based devices are reliable, this work studies ways to characterize and modeling of defects within the gate stack, as well as the conduction mechanisms through the gate oxide. It also discusses the mechanisms of defects generation by PBTI. The understanding of the physical phenomena that affect device reliability is fundamental for high-k oxide integration.VILLEURBANNE-DOC'INSA LYON (692662301) / SudocSudocFranceF

Lie Geometric Methods in the Study of Driftless Control Affine Systems with Holonomic Distribution and Economic Applications

In the present paper, two optimal control problems are studied using Lie geometric methods and applying the Pontryagin Maximum Principle at the level of a new working space, called Lie algebroid. It is proved that the framework of a Lie algebroid is more suitable than the cotangent bundle in order to find the optimal solutions of some driftless control affine systems with holonomic distributions. Finally, an economic application is given

ASPECTS REGARDING THE METHOD OF REALIZING THE TECHNICAL EXPERTISE FOR REPAIRING THE TRANSLATION MECHANISM OF A M4A COAL-MINING MACHINE

This paper presents the technical state of the mechanism of translation of the coalmining machine after the technical expertise. The rehabilitation to which the translation mechanism will be subjected will be carried out by performing the intervention works that will bring back into the normal operating parameters both the structural part and the functional part. The paper presents: the proposed solutions for repair after verification of the translation mechanism and the way of repairing the mechanism

Spurious phenomena occuring during current measurement on ultra-thin dielectric layers: From electro-thermal effects to surface damage

International audienceno abstractIn this paper, the conduction properties of dielectric ultra-thin layers are studied using atomic force microscopy. Especially, the conductive-atomic force microscope allows to measure the leakage current at the nanoscale and to study the degradation mechanisms locally. Nonetheless, the dielectric layer seems to be damaged by a technique's specific phenomenon: hillocks appear when a positive tip bias is applied on different dielectrics. In this paper, the formation of these hillocks is studied. Contrary to what is observed during the dielectric breakdown, the conductivity is reduced after hillocks formation which occurs after the dielectric breakdown. Moreover, we have observed the formation of cavities in the silicon substrate linked to the formation of hillocks, which is not compatible with a swelling process (as dielectric breakdown induced epitaxy). We propose that these results may be explained by an electro-thermal effect due to the large dissipated energy, maybe combined with the oxidation of the substrate. Finally, the interdependence of measurements is demonstrated during serial acquisition