ZrO2 ja Co3O4 koosnevate kihiliste struktuuride võimalikud kasutusvõimalused spinntroonilistes seadmetes

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Behavior of nanocomposite consisting of manganese ferrite particles and atomic layer deposited bismuth oxide chloride film

Nanocomposites of manganese ferrite and bismuth oxide chloride were synthesized. The composites consisted of 10 nm thick nanocrystalline bismuth oxide chloride thin film grown by atomic layer deposition on spinel MnFe2O4 nanoparticles prepared by wet chemical synthesis. The composite layers exhibited nonlinear polarization behavior in both magnetic and electric fields at room temperature. The magnetic coercive force, HC, was 30 – 40 Oe at room temperature. The width of electrical charge – voltage hysteresis loop reached 3.6 MV/cm.Peer reviewe

Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films

Atomic layer deposition method was employed to deposit thin films consisting of ZrO2 and HfO2. Zirconia films were doped with hafnia and vice versa, and also nanolaminates were formed. All depositions were carried out at 300 degrees C. Most films were crystalline in their as-deposited state. Zirconia exhibited the metastable cubic and tetragonal phases by a large majority, whereas hafnia was mostly in its stable monoclinic phase. Magnetic and electrical properties of the films were assessed. Un-doped zirconia was ferromagnetic and this property diminished with increasing the amount of hafnia in a film. All films exhibited ferroelectric-like behavior and the polarization curves also changed with respect to the film composition. (C) The Author(s) 2018. Published by ECS.Peer reviewe

Memory maps : Reading RRAM devices without power consumption

Producción CientíficaA comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms.Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grant TEC2014-52152-C3-3-R)Fondo Europeo de Desarrollo Regional (project TK134)Estonian Research Agency (grants IUT2-24 and PRG4

Electrical and magnetic properties of atomic layer deposited cobalt oxide and zirconium oxide nanolaminates

Producción CientíficaNanolaminates of ZrO2 and Co3O4 were atomic layer deposited on silicon and titanium nitride at 300 °C. Films were confirmed to be polycrystalline in the as-deposited state, with the cubic phase dominating in both oxides. All films exhibited resistive switching characteristics and charge polarization and ferromagnetic behavior. Also, the relative permittivities of the films were measured and the dispersion functions modelled.Ministerio de Economía, Industria y Competitividad (TEC2017-84321-C4-2-R