A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach

Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and stacked together with 2D materials enhances even more sensitivity, but at the cost of worsening the plasmonic couplic strength at resonance (minimum level of reflectivity) and broadening the response. With each supplementary layer added, the complexity of optimizing the performance increases due to the extended parameter space of the sensor. This study focused on overcoming these difficulties in the design process of sensors by employing a multi-objective genetic algorithm (NSGA II) alongside a transfer matrix method (TMM) and, at the same time, optimizing the sensitivity to full width at half maximum (FWHM), and the reflectivity level at a resonance for a four layer sensor structure. Firstly, the thin semiconductor’s refractive index was optimized to obtain the maximum achievable sensitivity with a narrow FWHM and a reflectivity level at a resonance of almost zero. Secondly, it was shown that refractive indices of barium titanate (BaTiO3) and silicon (Si) are the closest to the optimal indices for the silver—graphene/WS2 and MoS2 modified structures, respectively. Sensitivities up to 302 deg/RIU were achieved by Ag–BaTIO3–graphene/WS2 configurations with an FWHM smaller than 8 deg and a reflectivity level less than 0.5% at resonance

ψ-MOSFET Configuration for DNA Detection

International audienceThis work proposes a novel method for DNA detection by using the ψ-MOSFET configuration. Systematic measurements of the drain current vs. gate voltage revealed an important shift of the characteristics corresponding to the charge of the biochemical species attached to the top surface of the device. The results were validated by fluorescent scanning. The advantages of this method are its simplicity and sensitivity

Engineering Graphene Quantum Dots for Enhanced Ultraviolet and Visible Light p‑Si Nanowire-Based Photodetector

In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core–shell structures using newly designed GQD^PEIs via simple solution processing. The poly­(ethyleneimine) (PEI)-assisted synthesis successfully tuned both optical and electrical properties of graphene quantum dots (GQDs) to fulfill the requirements for strong yellow photoluminescence emission along with large band gap formation and the introduction of electronic states inside the band gap. The fabrication of a GQD^PEI-based device was followed by systematic structural and photoelectronic investigation. Thus, the GQD^PEI/SiNW photodetector exhibited a large photocurrent to dark current ratio (<i>I</i>_ph/<i>I</i>_dark up to ∼0.9 × 10² under 4 V bias) and a remarkable improvement of the external quantum efficiency values that far exceed 100%. In this frame, GQD^PEIs demonstrate the ability to arbitrate both charge-carrier photogeneration and transport inside a heterojunction, leading to simultaneous attendance of various mechanisms: (i) efficient suppression of the dark current governed by the type I alignment in energy levels, (ii) charge photomultiplication determined by the presence of the PEI-induced electron trap levels, and (iii) broadband ultraviolet-to-visible downconversion effects

Design, Fabrication and Characterization of a Low-Impedance 3D Electrode Array System for Neuro-Electrophysiology

Recent progress in patterned microelectrode manufacturing technology and microfluidics has opened the way to a large variety of cellular and molecular biosensor-based applications. In this extremely diverse and rapidly expanding landscape, silicon-based technologies occupy a special position, given their statute of mature, consolidated, and highly accessible areas of development. Within the present work we report microfabrication procedures and workflows for 3D patterned gold-plated microelectrode arrays (MEA) of different shapes (pyramidal, conical and high aspect ratio), and we provide a detailed characterization of their physical features during all the fabrication steps to have in the end a reliable technology. Moreover, the electrical performances of MEA silicon chips mounted on standardized connector boards via ultrasound wire-bonding have been tested using non-destructive electrochemical methods: linear sweep and cyclic voltammetry, impedance spectroscopy. Further, an experimental recording chamber package suitable for in vitro electrophysiology experiments has been realized using custom-design electronics for electrical stimulus delivery and local field potential recording, included in a complete electrophysiology setup, and the experimental structures have been tested on newborn rat hippocampal slices, yielding similar performance compared to commercially available MEA equipments