Thermal reversible breakdown and resistivityswitching in hafnium dioxide

HfO2 nanostructures are currently considered to be very promising for different applications including gate oxides in Si transistors and emerging nonvolatile memory cells such as resistive random access memory (RRAM). For RRAM development a clear understanding of switching mechanisms from a HRS to a LRS is demanding. Several models were proposed to explain the switching effect [1-3], however, they did not cover comprehensively experimental observations. It is experimentally shown by means of high resolution transmission electron microscopy that formation of CFs with diameters of 30-50 nm in HfO2 occurred by an electrical pretreatment [2]. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2055

Transport properties of n- and p-type polycrystalline BaSi2

Electron and hole mobilities versus temperature in semiconducting barium disilicide (BaSi2) have been systematically studied both experimentally and theoretically. The experiments were performed with undoped 250 nm-thick BaSi2 polycrystalline films grown by molecular beam epitaxy. The grain size of films ranged from 0.2 to 5 μm with the electron concentration of 5.0 × 1015 cm−3. To investigate the hole mobility, B-doped p-BaSi2 films with various dopant concentrations were fabricated and studied. The experimental temperature dependence of the electron mobility in the range of 160–300 K was found to have a maximum of 1230 cm2/V∙s at 218 K, while at room temperature (RT) it dropped down to 816 cm2/V∙s. We demonstrate that the temperature dependence of the electron mobility cannot be adequately reproduced by involving standard scattering mechanisms. A modified approach accounting for the grained nature of the films has been proposed for the correct description of the mobility behavior. The highest hole mobility in p-BaSi2 films reaching ~ 80 or 200 cm2/V∙s (for the films grown on (111) or (001) Si substrates, respectively) at RT is about an order or four times of magnitude smaller than that in n-BaSi2 films. Such a great difference we ascribe to the specific features of electron-phonon and hole-phonon coupling in semiconducting BaSi2

Electronic and optical properties of isostructural beta FeSi2 and OsSi2

We present both theoretical and experimental investigations of electronic and optical properties of isostructural b-FeSi2 and OsSi2 by means of a full-potential linear augmented plane wave method and optical measurements. We report also ellipsometric and reflectance measurements on samples of polycrystalline osmium disilicide prepared by mechanical alloying. From ab initio calculations these compounds are found to be indirect band-gap semiconductors with the fundamental gap of OsSi2 larger some 0.3–0.4 eV than the one of b-FeSi2. In addition to that, a low value of the oscillator strength is predicted for the first direct transitions in both cases. Computed optical functions for these materials were compared to the ones deduced from optical measurements, indicating very good agreement and the presence of some anisotropic effects

Structural, electronic, and optical Properties of beta Fe1 xCox Si2

Structural, Electronic, and Optical Properties of amp; 946; Fe1 xCox Si

Structural, electronic and optical properties of semiconducting rhenium silicide

Structural, Electronic and Optical Properties of Semiconducting Rhenium Silicid

Investigation of New Routes for the Synthesis of Mn4Si7

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