Atomically sharp domain walls in an antiferromagnet

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets.Comment: 8 pages, 4 figures, Supplementary informatio

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180∘ and 90∘ domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance

Magnetic vortex nucleation modes in static magnetic fields

The magnetic vortex nucleation process in nanometer- and micrometer-sized magnetic disks undergoes several phases with distinct spin configurations called the nucleation states. Before formation of the final vortex state, small submicron disks typically proceed through the so-called C-state while the larger micron-sized disks proceed through the more complicated vortex-pair state or the buckling state. This work classifies the nucleation states using micromagnetic simulations and provides evidence for the stability of vortex-pair and buckling states in static magnetic fields using magnetic imaging techniques and electrical transport measurements. Lorentz Transmission Electron Microscopy and Magnetic Transmission X-ray Microscopy are employed to reveal the details of spin configuration in each of the nucleation states. We further show that it is possible to unambiguously identify these states by electrical measurements via the anisotropic magnetoresistance effect. Combination of the electrical transport and magnetic imaging techniques confirms stability of a vortex-antivortex-vortex spin configuration which emerges from the buckling state in static magnetic fields

Magnetic vortex nucleation modes in static magnetic fields

The magnetic vortex nucleation process in nanometer- and micrometer-sized magnetic disks undergoes several phases with distinct spin configurations called the nucleation states. Before formation of the final vortex state, small submicron disks typically proceed through the so-called C-state while the larger micron-sized disks proceed through the more complicated vortex-pair state or the buckling state. This work classifies the nucleation states using micromagnetic simulations and provides evidence for the stability of vortex-pair and buckling states in static magnetic fields using magnetic imaging techniques and electrical transport measurements. Lorentz Transmission Electron Microscopy and Magnetic Transmission X-ray Microscopy are employed to reveal the details of spin configuration in each of the nucleation states. We further show that it is possible to unambiguously identify these states by electrical measurements via the anisotropic magnetoresistance effect. Combination of the electrical transport and magnetic imaging techniques confirms stability of a vortex-antivortex-vortex spin configuration which emerges from the buckling state in static magnetic fields

Large magnetic gap at the Dirac point in Bi2Te3/MnBi2Te4 heterostructures

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE), which provides quantized edge states for lossless charge-transport applications1,2,3,4,5,6,7,8. The edge states are hosted by a magnetic energy gap at the Dirac point2, but hitherto all attempts to observe this gap directly have been unsuccessful. Observing the gap is considered to be essential to overcoming the limitations of the QAHE, which so far occurs only at temperatures that are one to two orders of magnitude below the ferromagnetic Curie temperature, TC (ref. 8). Here we use low-temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi2Te3, which displays ferromagnetic out-of-plane spin texture and opens up only below TC. Surprisingly, our analysis reveals large gap sizes at 1 kelvin of up to 90 millielectronvolts, which is five times larger than theoretically predicted9. Using multiscale analysis we show that this enhancement is due to a remarkable structure modification induced by Mn doping: instead of a disordered impurity system, a self-organized alternating sequence of MnBi2Te4 septuple and Bi2Te3 quintuple layers is formed. This enhances the wavefunction overlap and size of the magnetic gap10. Mn-doped Bi2Se3 (ref. 11) and Mn-doped Sb2Te3 form similar heterostructures, but for Bi2Se3 only a nonmagnetic gap is formed and the magnetization is in the surface plane. This is explained by the smaller spin–orbit interaction by comparison with Mn-doped Bi2Te3. Our findings provide insights that will be crucial in pushing lossless transport in topological insulators towards room-temperature applications