The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics

A series of superlattices and trilayers composed of ferromagnetic and ferroelectric or paraelectric layers were grown on (100) SrTiO3 by the pulsed laser deposition technique. Their structural and magneto-electric properties were examined. The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCMO) and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhanced magnetoresistance (MR) at high applied magnetic field, whereas such enhancement was absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstrates the preponderant role of the ferroelectric layers in this enhanced MR. Furthermore, the absence of enhanced MR in trilayers of PCMO/BST indicates that the magneto-electric coupling which is responsible for MR in these systems is stronger in multilayers than in their trilayer counterparts.Comment: to be published in J. Appl. Phy

Structure determination of a brownmillerite Ca2Co2O5 thin film by Precession Electron Diffraction

Calcium cobaltite thin films with a ratio Ca/Co=1 were grown on (101)-NdGaO3 substrate by the pulsed laser deposition technique. The structure of the deposited metastable phase is solved using a precession electron diffraction 3D dataset recorded from a cross-sectional sample. It is shown that an ordered oxygen-deficient Ca2Co2O5+d perovskite of the brownmillerite-type with lattice parameters a= 0.546nm, b=1.488nm and c=0.546nm (SG: Ibm2) has been stabilized using the substrate induced strain. The structure and microstructure of this metastable cobaltite is further discussed and compared to related bulk materials based on our transmission electron microscopy investigationsComment: 13 pages, 10 figures, 2 tables, accepted in Phys. Rev.

Strain induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide V2O3

V2O3 thin films about 10 nm thick were grown on Al2O3 (0001) by pulsed laser deposition. The XRD analysis is in agreement with R-3c space group. Some of them exhibit the metal / insulator transition characteristic of V2O3 bulk material and others samples exhibit a metallic behavior. For the latter, the XPS analysis indicates an oxidation state of +III for vanadium. There is no metal / insulator transition around 150 K in this sample and a strongly correlated Fermi liquid rho = AT2 behavior of the resistivity at low temperature is observed, with a value of A of 1.2 10-4 ohm cm, 3 times larger than the bulk value at 25 kbar

Epitaxial Growth of La1/3_{1/3}Sr2/3_{2/3}FeO3_3 thin films by laser ablation

We report on the synthesis of high quality La$_{1/3}$Sr$_{2/3}$FeO$_3$ (LSFO) thin films using the pulsed laser deposition technique on both SrTiO$_3$ (STO) and LaAlO$_3$ (LAO) substrates (100)-oriented. From X-Ray diffraction (XRD) studies, we find that the films have an out-of-plane lattice parameter around 0.3865nm, almost independent of the substrate (i.e. the nature of the strains). The transport properties reveal that, while LSFO films deposited on STO exhibit an anomaly in the resistivity vs temperature at 180K (corresponding to the charge-ordered transition and associated with a transition from a paramagnetic to an antiferromagnetic state), the films grown on LAO display a very small magnetoresistance behavior and present an hysteresis around 270K under the application of a 4T magnetic field. The changes in transport properties between both substrates are discussed and compared with the corresponding single crystals.Comment: 9 pages, 4 figure

The DAG1 transcription factor negatively regulates the seed-to-seedling transition in Arabidopsis acting on ABA and GA levels

BACKGROUND: In seeds, the transition from dormancy to germination is regulated by abscisic acid (ABA) and gibberellins (GAs), and involves chromatin remodelling. Particularly, the repressive mark H3K27 trimethylation (H3K27me3) has been shown to target many master regulators of this transition. DAG1 (DOF AFFECTING GERMINATION1), is a negative regulator of seed germination in Arabidopsis, and directly represses the GA biosynthetic gene GA3ox1 (gibberellin 3-β-dioxygenase 1). We set to investigate the role of DAG1 in seed dormancy and maturation with respect to epigenetic and hormonal control. RESULTS: We show that DAG1 expression is controlled at the epigenetic level through the H3K27me3 mark during the seed-to-seedling transition, and that DAG1 directly represses also the ABA catabolic gene CYP707A2; consistently, the ABA level is lower while the GA level is higher in dag1 mutant seeds. Furthermore, both DAG1 expression and protein stability are controlled by GAs. CONCLUSIONS: Our results point to DAG1 as a key player in the control of the developmental switch between seed dormancy and germination

Comparison of two interferon-gamma release assays (QuantiFERON-TB Gold In-Tube and T-SPOT.TB) in testing for latent tuberculosis infection among HIV-infected adults.

There is currently no 'gold standard' for diagnosis of latent tuberculosis infection (LTBI), and both the tuberculin skin test and interferon-gamma release assays (IGRAs) are used for diagnosis; the latter have a higher sensitivity than tuberculin skin tests for diagnosis of LTBI in HIV-infected individuals with lower CD4 counts. No evidence base exists for selection of IGRA methodology to identify LTBI among human immunodeficiency virus-infected patients in the UK. We prospectively evaluated two commercially available IGRA methods (QuantiFERON-TB Gold In Tube [QFG] and T-SPOT.TB) for testing LTBI among HIV-infected patients potentially nosocomially exposed to an HIV-infected patient with 'smear-positive' pulmonary tuberculosis. Among the exposed patients median CD4 count was 550 cells/µL; 105 (90%) of 117 were receiving antiretroviral therapy, of who 104 (99%) had an undetectable plasma HIV load. IGRAs were positive in 12 patients (10.3%); QFG positive in 11 (9.4%) and T-SPOT.TB positive in six (5.1%); both IGRAs were positive in five patients (4.3%). There was one indeterminate QFG and one borderline T-SPOT.TB result. Concordance between the two IGRAs was moderate (κ = 0.56, 95% confidence interval = 0.27-0.85). IGRAs were positive in only 4 (29%) of 14 patients with previous culture-proven tuberculosis. No patient developed tuberculosis during 20 months of follow-up

High magnetic field transport measurement of charge-ordered Pr0.5_{0.5}Ca0.5_{0.5}MnO3_3 strained thin films

We have investigated the magnetic-field-induced phase transition of charge-ordered (CO) Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films, deposited onto (100)-oriented LaAlO$_3$ and (100)-oriented SrTiO$_3$ substrates using the pulsed laser deposition technique, by measuring the transport properties with magnetic fields up to 22T. The transition to a metallic state is observed on both substrates by application of a critical magnetic field ($H_C>10T$ at 60K). The value of the field required to destroy the charge-ordered insulating state, lower than the bulk compound, depends on both the substrate and the thickness of the film. The difference of the critical magnetic field between the films and the bulk material is explained by the difference of in-plane parameters at low temperature (below the CO transition). Finally, these results confirm that the robustness of the CO state, depends mainly on the stress induced by the difference in the thermal dilatations between the film and the substrate.Comment: 10 pages, 6 figures. To be published in Phys. Rev.

Thickness-dependence of the electronic properties in V2O3 thin films

High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (\rho) follows the equation \rho =\rho_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 \mu\Omega cm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.Comment: 4 pages, 4 figure