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    Exact Persistence Exponent for One-dimensional Potts Models with Parallel Dynamics

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    We obtain \theta_p(q) = 2\theta_s(q) for one-dimensional q-state ferromagnetic Potts models evolving under parallel dynamics at zero temperature from an initially disordered state, where \theta_p(q) is the persistence exponent for parallel dynamics and \theta_s(q) = -{1/8}+ \frac{2}{\pi^2}[cos^{-1}{(2-q)/q\sqrt{2}}]^2 [PRL, {\bf 75}, 751, (1995)], the persistence exponent under serial dynamics. This result is a consequence of an exact, albeit non-trivial, mapping of the evolution of configurations of Potts spins under parallel dynamics to the dynamics of two decoupled reaction diffusion systems.Comment: 13 pages Latex file, 5 postscript figure

    Doping, density of states and conductivity in polypyrrole and poly(p-phenylene vinylene)

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    The evolution of the density of states (DOS) and conductivity as function of well controlled doping levels in OC_1C_10-poly(p-phenylene vinylene) [OC_1C_10-PPV] doped by FeCl_3 and PF_6, and PF_6 doped polypyrrole (PPy-PF_6 have been investigated. At a doping level as high as 0.2 holes per monomer, the former one remains non-metallic, while the latter crosses the metal-insulator transition. In both systems a similar almost linear increase in DOS as function of charges per unit volume c* has been observed from the electrochemical gated transistor data. In PPy-PF_6, when compared to doped OC_1C_10-PPV, the energy states filled at low doping are closer to the vacuum level; by the higher c* at high doping more energy states are available, which apparently enables the conduction to change to metallic. Although both systems on the insulating side show log(sigma) proportional to T^-1/4 as in variable range hopping, for highly doped PPy-PF_6 the usual interpretation of the hopping parameters leads to seemingly too high values for the density of states.Comment: 4 pages (incl. 6 figures) in Phys. Rev.
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