Nonlinear Decay of Quantum Confined Magnons in Itinerant Ferromagnets

Quantum confinement leads to the emergence of several magnon modes in ultrathin layered magnetic structures. We probe the lifetime of these quantum confined modes in a model system composed of three atomic layers of Co grown on different surfaces. We demonstrate that the quantum confined magnons exhibit nonlinear decay rates, which strongly depend on the mode number, in sharp contrast to what is assumed in the classical dynamics. Combining the experimental results with those of linear-response density functional calculations we provide a quantitative explanation for this nonlinear damping effect. The results provide new insights into the decay mechanism of spin excitations in ultrathin films and multilayers and pave the way for tuning the dynamical properties of such structures

Exchange interaction and its tuning in magnetic binary chalcogenides

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.Using a first-principles Green's function approach we study magnetic properties of the magnetic binary tetradymite chalcogenides Bi2Se3, Bi2Te3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into exchange interactions in magnetic binary tetradymite chalcogenides and open a way to design new materials for promising applications.We acknowledge support by the Tomsk State University Competitiveness Improvement Program and the Deutsche Forschungsgemeinschaft (Priority Program SPP 1666 “Topological Insulators”).Peer Reviewe

Exchange interaction and its tuning in magnetic binary chalcogenides

Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into magnetic interactions in magnetic binary chalcogenides and open a way to design new materials for promising applications

The optical tweezer of skyrmions

In a spin-driven multiferroic system, the magnetoelectric coupling has the form of effective dynamical Dzyaloshinskii–Moriya (DM) interaction. Experimentally, it is confirmed, for instance, for Cu2OSeO3, that the DM interaction has an essential role in the formation of skyrmions, which are topologically protected magnetic structures. Those skyrmions are very robust and can be manipulated through an electric field. The external electric field couples to the spin-driven ferroelectric polarization and the skyrmionic magnetic texture emerged due to the DM interaction. In this work, we demonstrate the effect of optical tweezing. For a particular configuration of the external electric fields it is possible to trap or release the skyrmions in a highly controlled manner. The functionality of the proposed tweezer is visualized by micromagnetic simulations and model analysis

Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors.Comment: 13 pages, 9 figure