Evaluation of the potential for dissolved oxygen ingress into deep sedimentary basins during a glaciation event

Geochemical conditions in intracratonic sedimentary basins are currently reducing, even at relatively shallow depths. However, during glaciation-deglaciation events, glacial meltwater production may result in enhanced recharge (Bea et al., 2011; and Bea et al., 2016) potentially having high concentrations of dissolved oxygen (O2). In this study, the reactive transport code Par-MIN3PTHCm was used to perform an informed, illustrative set of simulations assessing the depth of penetration of low salinity, O2-rich, subglacial recharge. Simulation results indicate that the large-scale basin hydrostratigraphy, in combination with the presence of dense brines at depth, results in low groundwater velocities during glacial meltwater infiltration, restricting the vertical ingress of dilute recharge waters. Furthermore, several geochemical attenuation mechanisms exist for O2, which is consumed by reactions with reduced mineral phases and solid organic matter (SOM). The modeling showed that effective oxidative mineral dissolution rates and SOMoxidation rates between 5 × 10-15 and 6 × 10-13 mol dm-3 bulk s-1 were sufficient to restrict the depth of O2 ingress to less than 200m.These effective rates are low and thus conservative, in comparison to rates reported in the literature. Additional simulations with more realistic, yet still conservative, parameters reaffirm the limited ability for O2 to penetrate into sedimentary basin rocks during a glaciation-deglaciation event.Fil: Bea, Sergio Andrés. Universidad Nacional del Centro de la Provincia de Buenos Aires. Rectorado. Instituto de Hidrología de Llanuras - Sede Tandil. Provincia de Buenos Aires. Gobernación. Comisión de Investigaciones Científicas. Instituto de Hidrología de Llanuras - Sede Tandil; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Su, Danyang. University of British Columbia; CanadáFil: Mayer, Klaus Ulrich. University of British Columbia; CanadáFil: MacQuarrie, T. B.. University of New Brunswick; Canad

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Venture Capital in Japan: A Financial Instrument Supporting the Innovativeness of the Japanese Economy

Two factors: First, the relatively small number of new companies as well as the number of companies subject to liquidation over the year ("firm turnover") in Japan, and second, the insignificant prestige associated with the profession of entrepreneur do not foster growth in the dynamics of this form of financing ventures. The cited indicator for Japan in among the lowest in comparison with other highly developed countries1, while the profession of entrepreneur is not the foremost dream of college graduates. They would much rather prefer realizing their professional careers as members of the government bureaucracy or employees of a major corporation2. However, this mindset is slowly changing, if for no other reason then, in spite of popular conviction, because most small companies are not established during periods of prosperity, but near the end of the downward phase of the economic cycle. That is exactly the phase Japan has been dealing with for several years now. Young, creative people, recruited from the unemployed, are seeking self-employment, using all possible opportunities embedded in the "again starting up" machinery of the economy.Dwa czynniki: pierwszy - stosunkowo mała liczba nowych firm, a także firm likwidowanych w skali roku ("firm turnover") w Japonii oraz drugi - niewielki prestiż, jakim cieszy się zawód przedsiębiorcy, nie sprzyjają dynamizacji omawianej formy finansowania przedsięwzięć. Cytowany wskaźnik, dla Japonii należy do najniższych w porównaniu z innymi krajami wysoko rozwiniętymi (Grabowiecki 2000), zaś profesja przedsiębiorcy nie jest szczytem marzeń ludzi po studiach. Znacznie bardziej chcieliby oni swoją karierę zawodową realizować jako członkowie rządowej biurokracji lub pracownicy dużej korporacji (Corver 2008, s. 2). Ta świadomość ulega jednak stopniowej zmianie, chociażby dlatego, że wbrew popularnym przekonaniom, większość niewielkich przedsiębiorstw, powstaje nie w okresie prosperity, lecz pod koniec spadkowej fazy cyklu koniunkturalnego. Z taką fazą mamy do czynienia w Japonii od paru lat. Młodzi, kreatywni ludzie, rekrutujący się z bezrobotnych, poszukują samozatrudnienia, wykorzystują wszelakie szanse, tkwiące w "ruszającej na powrót" maszynerii gospodark (Yonekura, Lynskey 2003, s. 11)

Forming Disk Galaxies in Lambda CDM Simulations

We used fully cosmological, high resolution N-body + SPH simulations to follow the formation of disk galaxies with rotational velocities between 135 and 270 km/sec in a Lambda CDM universe. The simulations include gas cooling, star formation, the effects of a uniform UV background and a physically motivated description of feedback from supernovae. The host dark matter halos have a spin and last major merger redshift typical of galaxy sized halos as measured in recent large scale N--Body simulations. The simulated galaxies form rotationally supported disks with realistic exponential scale lengths and fall on both the I-band and baryonic Tully Fisher relations. An extended stellar disk forms inside the Milky Way sized halo immediately after the last major merger. The combination of UV background and SN feedback drastically reduces the number of visible satellites orbiting inside a Milky Way sized halo, bringing it in fair agreement with observations. Our simulations predict that the average age of a primary galaxy's stellar population decreases with mass, because feedback delays star formation in less massive galaxies. Galaxies have stellar masses and current star formation rates as a function of total mass that are in good agreement with observational data. We discuss how both high mass and force resolution and a realistic description of star formation and feedback are important ingredients to match the observed properties of galaxies.Comment: Revised version after the referee's comments. Conclusions unchanged. 2 new plots. MNRAS in press. 20 plots. 21 page

RCP8.5-projected changes in German Bight storm surge characteristics from regionalized ensemble simulations for the end of the twenty-first century

This study investigates climate-induced changes in height, frequency and duration of storm surges in the German Bight. The regionally coupled climate model system MPIOM-REMO with a focus on the North Sea has been utilized to dynamically downscale 30 members of the global climate model system MPI-ESM1.1-LR for the historical period 1950–2005 and a continuation until 2099 with the RCP8.5 scenario. Results of all members have been collected into the historical (1970–1999) and the rcp85 (2070–2099) data pools amounting to 900 years of the corresponding climate state. The global mean sea level rise was not considered. Nevertheless, the mean ensemble German Bight SSH trend amounts to about 13 ± 1 cm/century (PI control: 3 cm/century) due to adaptation of the ocean circulation to the changing climatic conditions. Storm surges were defined as SSH above mean high tidal water plus 1.5, 2.5, 3.5 m for “regular”, heavy, extreme storm surges, and then clustered to events. Our simulated storm surge events show a clear location-dependent increase in frequency (6–11), median duration (4–24), and average duration (9–20) in the German Bight. Only along the central German Bight coast (Cuxhaven), longer lasting events gain more relevance. Heavy storm surge events show also a strong increase in frequency (7–34) and average duration (10–22). Maximum sea levels during storm events increase strongest and most significant along the northern German Bight and Danish coasts with more than 30 cm/century for the 60-year return period at Hörnum and 10–15 cm/century for shorter return periods. Levels of return periods shorter than a few years significantly increase everywhere along the southern German Bight coasts (around 5 cm/century for the 2-year return period). Highest SSH maxima do not change, and consequently, extreme storm surge events show hardly any response to climate change. Furthermore, our results indicate a shift of seasonality from the last to the first quarter of a year. As the main driver for the encountered alteration of German Bight storm surge characteristics, we identified a change in wind conditions with a pronounced increase of frequency of strong westerly winds