Patients's Satisfaction with Nursing Communication (Therapeutic Communication) on Adult Medical Surgical Wards at Prof.DR. Margono Soekarjo Hospital of Purwokerto, Central Java, Indonesia

Dalam praktek keperawatan, komunikasi adalah suatu alat yang penting untuk membina hubungan terapeutik dan dapat mempengaruhi kualitas pelayanan keperawatan. Lebih jauh, komunikasi sangat penting karena dapat mempengaruhi tingkat kepuasan pasien terhadap pelayanan kesehatan yang diberikan. Dilain sisi, penyebab sumber ketidakpuasan pasien sering disebabkan karena jeleknya komunikasi yang terjadi dengan pasien. Oleh karena itu pengukuran kepuasan pasien terhadap komunikasi terapeutik perawat akan bermanfaat dalam memonitor dan meningkatkan kualitas pelayanan kesehatan, khususnya untuk meningkatkan pelayanan keperawatan. Tujuan dari penelitian ini adalah untuk menginvestigasi persepsi pasien terrhadap kemampuan komunikasi verbal dan nonverbal perawat, tingkat kepuasan pasien terhadap komunikasi keperawatan, dan tingkat kepuasan pasien terhadap komunikasi keperawatan berdasarkan kelompok demografis (gender, umur, dan tingkat pendidikan). Penelitian ini dilakukan di Rumah Sakit Prof. Dr. Margono Soekarjo Purwokerto, Prov. Jawa Tengah. Jumlah sampel dalam penelitian sebanyak 242 pasien yang dirawat di bangsal bedah dalam (n = 242). Hasil penelitian ini menunjukkan bahwa komunikasi yang tidak efektif masih terjadi dalam praktik perawat sehari-hari di Rumah Sakit Prof. Dr. Margono Soekarjo Purwokerto. Namun, mayoritas pasien merasa puas terhadap percakapan yang mereka lakukan dengan perawat. Berdasarkan kelompok demografis, pasien perempuan cenderung merasa lebih puas dibandingkan pasien pria terhadap komunikasi keperawatan, pasien yang lebih tua memberikan respon kepuasan yang lebih dibanding pasien muda, dan pasien dengan pendidikan rendah cenderung memberikan respon yang positif dalam berkomunikasi dengan perawa

Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field

Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (Tc ~ 40 K), a new phase transition is observed close to 13 K.Comment: 8 pages, 5 figures, Proceedings of the XXXII International School on the Physics of Semiconducting Compounds, Jaszowiec 2003, Polan

Second order resonant Raman scattering in single layer tungsten disulfide (WS2_{2})

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.Comment: 6 pages, 4 figure

Magnetotransport in graphene on silicon side of SiC

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.Comment: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 2

Revealing large-scale homogeneity and trace impurity sensitivity of GaAs nanoscale membranes

III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Capping of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also to a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the sub-micron and sub-millimeter scale, demonstrating the potential of these structures for large scale applications.Comment: just accepted in Nano Letters, http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b0025