Silicon carbide semiconductor technology for high temperature and radiation environments

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response

High-temperature electronics

To meet the needs of the aerospace propulsion and space power communities, the high temperature electronics program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. This program supports a major element of the Center's mission - to perform basic and developmental research aimed at improving aerospace propulsion systems. Research is focused on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of SiC devices

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed

Apparatus for electrical measurements of thin films from 77 to 1000 K

A novel method of mounting thin samples for electrical measurements is described. A vacuum chuck holds a mounting plate, which, in turn, holds the sample. Contacts on the mounting plate establish electrical connection to the sample. The attachment of wires directly to the samples is unnecessary. Measurements can be made at temperatures from 77 to 1000 K. As an application of the apparatus, resistivity and Hall measurements of a thin silicon carbide sample are presented

El viaje inmigratorio de familias judías hacia Chile en el siglo XX

This paper describes the main aspects of immigration of Jewish families travel to Chile and suggests that such a trip was made by an important group of relatively common challenges. On the other hand, argues that these challenges were very different magnitudes depending on the specific circumstances of the historical context and conditioned experiences varied. Finally, proposes certain capabilities that may have helped cushion the considerable level of uncertainty that surrounded each trip, and would have served as support since the time of departure to the arrival and entry into Chile.Este trabajo describe los principales aspectos del viaje inmigratorio de familias judías a Chile y postula que tal viaje estuvo conformado por un conjunto importante de desafíos relativamente comunes. Por otro lado, plantea que estos desafíos tuvieron magnitudes muy diversas dependiendo de la circunstancia específica del contexto histórico y condicionaron vivencias muy variadas. Por último, postula ciertas capacidades que pudieron haber contribuido a amortiguar las considerables dosis de incertidumbre que rodearon cada viaje, y que habrían servido de apoyo desde el momento de la partida hasta el momento de la llegada y la inserción en Chile

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates

Compensation in epitaxial cubic SiC films

Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC

Seed dormancy and germination in three annual canarygrass (Phalaris canariensis L.) cultivars relative to spring wheat (Triticum aestivum L.)

Non-Peer ReviewedSeed dormancy in annual canarygrass may lead to unsatisfactory germination in seed tests. The objectives of this study were (i) to quantify the levels of seed dormancy in three morphologically diverse annual canarygrass cultivars (‘Keet’, ‘CDC Maria’, & ‘CY 184’) relative to spring wheat & (ii) to determine the effectiveness of three treatments (GA3, KNO3, & chilling) & two temperature regimes (15/25°C & 15°C) in promoting germination of dormant annual canarygrass seeds. The hard red spring wheat cultivar ‘Katepwa’ control was included as a representative of a cereal crop that has been extensively characterized with regards to seed dormancy. In 1998 & 1999, the four cultivars were grown at Saskatoon, Canada. At maturity, panicles & spikes were hand harvested & stored at –20°C. Four replications of 50 seeds per cultivar were used in each experiment. Three experiments were conducted: (i) seeds were germinated at 10, 15, 20, & 25°C for one week, (ii) seeds were stored at 24°C for zero to eight weeks prior to germination at 22°C for one week, & (iii) seeds were treated with GA3, KNO3, & chilling prior to germination at 15/25°C (16/8h) or 15°C for two weeks. For experiment one & three, a split-plot analysis was used to analyze arc sin transformed percentage germination data. Average percentage germination data in experiment two were tested to be significantly different from 98% germination (P=0.05) based on one-tailed t-tests. Annual canarygrass developed deeper dormancy than the wheat cultivar in both years, particularly when germinated at 20 & 25°C. The highest percentage germination was observed at 15°C. Two (1998) & four weeks (1999) of storage at 24°C were required to overcome dormancy in annual canarygrass. Pre-chilling or KNO3 treatment prior to germination at 15/25°C (16/8h in darkness) resulted in average germination levels of 94% (1998) & 66% (1999). Potassium nitrate treatment prior to incubation at 15°C in darkness was the most effective method of promoting germination in dormant seeds, resulting in 99% (1998) & 97% (1999) germination. Thus, we recommend the use of the latter method, instead of the former or currently recommended method (pre-chilling or KNO3 treatment prior to germination at 15/25°C [16/8h] in darkness), for testing germination levels of dormant seed of annual canarygrass