X-ray phase contrast topography to measure the surface stress and bulk strain in a silicon crystal

The measurement of the Si lattice parameter by x-ray interferometry assumes the use of strain-free crystals, which might not be true because of intrinsic stresses due to surface relaxation, reconstruction, and oxidation. We used x-ray phase-contrast topography to investigate the strain sensitivity to the finishing, annealing, and coating of the interferometer crystals.We assessed the topography capabilities by measuring the lattice strain due to films of copper deposited on the interferometer mirror-crystal. A byproduct has been the measurement of the surface stresses after complete relaxation of the coatings

Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices

Memristive devices relying on redox-based resistive switching mechanisms represent promising candidates for the development of novel computing paradigms beyond von Neumann architecture. Recent advancements in understanding physicochemical phenomena underlying resistive switching have shed new light on the importance of an appropriate selection of material properties required to optimize the performance of devices. However, despite great attention has been devoted to unveiling the role of doping concentration, impurity type, adsorbed moisture, and catalytic activity at the interfaces, specific studies concerning the effect of the counter electrode in regulating the electronic flow in memristive cells are scarce. In this work, the influence of the metal-insulator Schottky interfaces in electrochemical metallization memory (ECM) memristive cell model systems based on single-crystalline ZnO nanowires (NWs) is investigated following a combined experimental and modeling approach. By comparing and simulating the electrical characteristics of single NW devices with different contact configurations and by considering Ag and Pt electrodes as representative of electrochemically active and inert electrodes, respectively, we highlight the importance of an appropriate choice of electrode materials by taking into account the Schottky barrier height and interface chemistry at the metal-insulator interfaces. In particular, we show that a clever choice of metal-insulator interfaces allows to reshape the hysteretic conduction characteristics of the device and to increase the device performance by tuning its resistance window. These results obtained from single NW-based devices provide new insights into the selection criteria for materials and interfaces in connection with the design of advanced ECM cells

Dimensional crossover and incipient quantum size effects in superconducting niobium nanofilms

Superconducting and normal state properties of sputtered Niobium nanofilms have been systematically investigated, as a function of film thickness in a d=9-90 nm range, on different substrates. The width of the superconducting-to-normal transition for all films remained in few tens of mK, thus remarkably narrow, confirming their high quality. We found that the superconducting critical current density exhibits a pronounced maximum, three times larger than its bulk value, for film thickness around 25 nm, marking the 3D-to-2D crossover. The extracted magnetic penetration depth shows a sizeable enhancement for the thinnest films, aside the usual demagnetization effects. Additional amplification effects of the superconducting properties have been obtained in the case of sapphire substrates or squeezing the lateral size of the nanofilms. For thickness close to 20 nm we also measured a doubled perpendicular critical magnetic field compared to its saturation value for d>33 nm, indicating shortening of the correlation length and the formation of small Cooper pairs in the condensate. Our data analysis evidences an exciting interplay between quantum-size and proximity effects together with strong-coupling effects and importance of disorder in the thinnest films, locating the ones with optimally enhanced critical properties close to the BCS-BEC crossover regime

Memristive Devices for Quantum Metrology

As a consequence of the redefinition of the International System of Units (SI), where units are defined in terms of fundamental physical constants, memristive devices represent a promising platform for quantum metrology. Coupling ionics with electronics, memristive devices can exhibit conductance levels quantized in multiples of the fundamental quantum of conductance G(0) = 2e(2)/h. Since the fundamental quantum of conductance G(0) is related only to physical constants that assume fixed value in the revised SI, memristive devices can be exploited for the practical realization of a quantum-based resistance standard that, differently from quantum-Hall based devices conventionally adopted as resistance standards, can operate in different ambient conditions (air, vacuum, harsh environment), in a wide range of temperatures and without the need of an applied magnetic field In this work, the possibility of using memristive devices for quantum metrology is critically discussed, based on recent experimental and theoretical advances on quantum conductance phenomena reported in literature. Thanks to the high operational speed, high scalability down to the nanometer scale, and CMOS compatibility, memristive devices allow on-chip implementation of a resistance standard required for the realization of self-calibrating electrical systems and equipment with zero-chain traceability in accordance with the revised SI

Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices

Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbOx-based memristive cells. For this purpose, the effect of Au, Pt, Ir, TiN, and Nb top electrodes was investigated in devices based on amorphous NbOx grown by anodic oxidation on a Nb substrate exploited also as counter electrode. It is shown that the choice of the metal electrode regulates electronic transport properties of metal–insulator interfaces, strongly influences the electroforming process, and the following resistive switching characteristics. Results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. It is shown that Pt represents the best choice for the realization of memristive cells when the NbOx thickness is reduced, making possible the realization of memristive cells characterised by low variability in operating voltages, resistance states and with low device-to-device variability. These results can provide new insights towards a rational design of redox-based memristive cells

Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks

Acting as artificial synapses, two‐terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Current memristive crossbar architectures demonstrate the implementation of neuromorphic computing paradigms, although they are unable to emulate typical features of biological neural networks such as high connectivity, adaptability through reconnection and rewiring, and long‐range spatio‐temporal correlation. Herein, self‐organizing memristive random nanowire (NW) networks with functional connectivity able to display homo‐ and heterosynaptic plasticity is reported thanks to the mutual electrochemical interaction among memristive NWs and NW junctions. In particular, it is shown that rewiring and reweighting effects observed in single NWs and single NW junctions, respectively, are responsible for structural plasticity of the network under electrical stimulation. Such biologically inspired systems allow a low‐cost realization of neural networks that can learn and adapt when subjected to multiple external stimuli, emulating the experience‐dependent synaptic plasticity that shape the connectivity and functionalities of the nervous system that can be exploited for hardware implementation of unconventional computing paradigms

Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks

open8sìActing as artificial synapses, two‐terminal memristive devices are considered fundamental building blocks for the realization of artificial neural networks. Current memristive crossbar architectures demonstrate the implementation of neuromorphic computing paradigms, although they are unable to emulate typical features of biological neural networks such as high connectivity, adaptability through reconnection and rewiring, and long‐range spatio‐temporal correlation. Herein, self‐organizing memristive random nanowire (NW) networks with functional connectivity able to display homo‐ and heterosynaptic plasticity is reported thanks to the mutual electrochemical interaction among memristive NWs and NW junctions. In particular, it is shown that rewiring and reweighting effects observed in single NWs and single NW junctions, respectively, are responsible for structural plasticity of the network under electrical stimulation. Such biologically inspired systems allow a low‐cost realization of neural networks that can learn and adapt when subjected to multiple external stimuli, emulating the experience‐dependent synaptic plasticity that shape the connectivity and functionalities of the nervous system that can be exploited for hardware implementation of unconventional computing paradigms.openGianluca Milano; Giacomo Pedretti; Matteo Fretto; Luca Boarino; Fabio Benfenati; Daniele Ielmini; Ilia Valov; Carlo RicciardiMilano, Gianluca; Pedretti, Giacomo; Fretto, Matteo; Boarino, Luca; Benfenati, Fabio; Ielmini, Daniele; Valov, Ilia; Ricciardi, Carl

Tests of SNIS Josephson Arrays Cryocooler Operation

Cryogen-free operation of is essential to spread applications of superconductivity and is indeed unavoidable in some cases. In electrical metrology applications, higher temperature operation to reduce the refrigerator size and complexity is not yet possible, since arrays of Josephson junctions for voltage standard applications made with high-temperature superconductors are not yet available. The superconductor-normal metal-insulator-superconductor (SNIS) technology developed at INRIM uses low temperature superconductors, but allows operation well above liquid helium temperature. It is thus interesting for application to a compact cryocooled standard. We studied SNIS devices cooled with a closed-cycle refrigerator, both in DC and under RF irradiation. Issues related to thermal design of the apparatus are analyzed. The dependence of RF steps on the number of junctions observed is discussed in detail and interpreted as a consequence of power dissipated inside the chip