Silicon optical modulators

Optical technology is poised to revolutionise short reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such interconnect is the optical modulator. Modulators have been improved dramatically in recent years. Most notably the bandwidth has increased from the MHz to the multi GHz regime in little more than half a decade. However, the demands of optical interconnect are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimising metrics such as the energy per bit, and device footprint, whilst maximising bandwidth and modulation depth are non trivial demands. All of this must be achieved with acceptable thermal tolerance and optical spectral width, using CMOS compatible fabrication processes. Here we discuss the techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future

A high efficiency input/output coupler for small silicon photonic devices

Coupling light from an optical fibre to small optical waveguides is particularly problematic in semiconductors, since the refractive index of the silica fibre is very different from that of a semiconductor waveguide. There have been several published methods of achieving such coupling, but none are sufficiently efficient whilst being robust enough for commercial applications. In this paper experimental results of our approach called a Dual-Grating Assisted Directional Coupler, are presented. The principle of coupling by this novel method has been successfully demonstrated, and a coupling efficiency of 55% measured

third order bragg grating filters in small soi waveguides

Third order grating filters fabricated in small Silicon-on-Insulator rib waveguides are demonstrated. Variations in grating etch depth and duty cycle are considered, and a maximum experimental reflection of 42% is demonstrated for gratings of 1500 µm in length, with a grating period of approximately 689nm and an etch depth of 200nm. Agreement with modeling is shown to be good

Locally erasable couplers for optical device testing in silicon on insulator

Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit. The method is based on diffractive grating couplers, fabricated using lattice damage induced by ion implantation of germanium. These gratings can be erased via localised laser annealing, which is shown to reduce the outcoupling efficiency by over 20 dB after the device testing is completed. Laser annealing was achieved by employing a CW laser, operating at visible wavelengths thus reducing equipment costs and allowing annealing through thick oxide claddings. The process used also retains CMOS compatibility

Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8 mu m

The design and characterization of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm

Suspended nanocrystalline diamond ridge waveguides designed for the mid-infrared

A comprehensive study and design of air-clad suspended ridge diamond waveguides for operation across the 2.5–16 µm spectral range is presented, specifically targeting nanocrystalline diamond (NCD) thin films directly grown on silicon substrates. Three film thicknesses of 520, 1000 and 2000 nm are considered, to cover overlapping sub-bands of 2.5–5, 4–9 and 8–16 µm, respectively. Within each sub-band, the waveguide dimensions for single mode quasi-TE operation are found and the waveguide material losses and bending losses are estimated at each design point. In addition, in each case the minimum required undercut depth and etch hole placement for optical isolation of the waveguide mode from the silicon substrate is also quantified. We also estimate the losses associated with scattering from surface roughness, which is an unavoidable byproduct of the NCD thin film growth process. Our results indicate that despite the relatively low film thickness-to-wavelength ratio, mechanically stable waveguides with good optical confinement and low material and bending losses can be realised to cover the full 2.5–16 µm range. In addition, scattering loss estimations predict a drastic drop in roughness-induced scattering losses above 6 µm, even for relatively rough films. In addition to highlighting the utility of suspended NCD as a versatile platform for mid-infrared integrated photonics, the approaches and results presented here can be used to inform the design of suspended air-clad waveguides in other material platforms

Localised tuneable composition single crystal silicon-germanium-on-insulator for low cost devices

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 µm and 1.55 µm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors, and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for state of the art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step

Suspended silicon integrated platform for the long-wavelength mid-infrared band

The atmospheric-transmission window and the fingerprint region of many substances overlaps with the long-wave infrared band. This has enabled the emergence of a new path for photonic integrated circuits, which could exploit the potential applications of this wavelength range, including chemical and bio sensing. In this work we review our latest advances in the suspended silicon platform with subwavelength grating lateral cladding at 7.7-µm wavelength. Suspended waveguides only require one lithographic etch step and can be specifically designed to maximize sensitivity when used as sensors. Waveguides with propagation loss of 3.1±0.3 dB/cm are demonstrated, as well as bends with less than 0.1 dB/bend. Suspended waveguides based on shifted Bragg grating lateral cladding are also reported, with propagation loss of 5.1±0.6 dB/cm. These results prepare the ground for the development of a platform capable of covering the entire mid-infrared band. Keywords: suspended silicon, mid-infrared, long-wave infrared, subwavelength grating, Bragg.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Tailoring the Response of Silicon Photonics Devices

Abstract: Shrinking waveguide dimensions in silicon photonics results in a series of performance enhancements, but at some cost. We analyse the waveguide geometry in optical modulators and filters to address some issues associated with this trend. Silicon photonics has experienced rapid development for the last three years and several significant results have been reported, demonstrating the viability of the technology [e.g., 1, 2, 3, 4]. One of the recent trends in silicon photonics has been the reduction of waveguide dimensions. This reduction facilitates tighter bending radii and therefore a smaller device footprint which in turn, significantly reduces the cost. Furthermore, technical performance of many silicon photonic devices is enhanced. However, there are also some issues with this trend to smaller dimensions, notably increased propagation losses, increased polarisation dependence and difficulty in coupling to/from optical fibres. These issues can be overcome with a careful design of the waveguide and device geometry. We have previously shown that by reducing waveguide dimensions, multi-GHz bandwidth optical modulators can be achieved by utilising a horizontal pn junction in a waveguide with an overall height of 450 nm In order to improve the polarisation performance to approach polarisation independence of the modulator, we propose here a modulator with a pn junction that is a V-shape structure, as shown in Highly doped silicon Silicon dioxide Highly doped silicon Highly doped silico