Optical properties of arrays of quantum dots with internal disorder

Optical properties of large arrays of isolated quantum dots are discussed in order to interpret the existent photoluminescence data. The presented theory explains the large observed shift between the lowest emission and absorption energies as the average distance between the ground and first excited states of the dots. The lineshape of the spectra is calculated for the case when the fluctuations of the energy levels in quantum dots are due to the alloy composition fluctuations. The calculated lineshape is in good agreement with the experimental data. The influence of fluctuations of the shape of quantum dots on the photoluminescence spectra is also discussed.Comment: 7 pages (twocolumn) LATEX, 6 Postscript figure

Fano interference effect on the transition spectrum of single electron transistors

We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Owing to nonradiative coupling between two excited states through the continuum of electrodes, the Fano interference effect significantly influences the peak position and intensity of infrared wavelength single-photon spectrum.Comment: 4 pages, 5 figure

Scanning Fourier Spectroscopy: A microwave analog study to image transmission paths in quantum dots

We use a microwave cavity to investigate the influence of a movable absorbing center on the wave function of an open quantum dot. Our study shows that the absorber acts as a position-selective probe, which may be used to suppress those wave function states that exhibit an enhancement of their probability density near the region where the impurity is located. For an experimental probe of this wave function selection, we develop a technique that we refer to as scanning Fourier spectroscopy, which allows us to identify, and map out, the structure of the classical trajectories that are important for transmission through the cavity.Comment: 4 pages, 5 figure

Wave function mapping conditions in Open Quantum Dots structures

We discuss the minimal conditions for wave function spectroscopy, in which resonant tunneling is the measurement tool. Two systems are addressed: resonant tunneling diodes, as a toy model, and open quantum dots. The toy model is used to analyze the crucial tunning between the necessary resolution in current-voltage characteristics and the breakdown of the wave functions probing potentials into a level splitting characteristic of double quantum wells. The present results establish a parameter region where the wavefunction spectroscopy by resonant tunneling could be achieved. In the case of open quantum dots, a breakdown of the mapping condition is related to a change into a double quantum dot structure induced by the local probing potential. The analogy between the toy model and open quantum dots show that a precise control over shape and extention of the potential probes is irrelevant for wave function mapping. Moreover, the present system is a realization of a tunable Fano system in the wave function mapping regime.Comment: 6 pages, 6 figure

Investigation of reactive‐ion‐etch‐induced damage of InP/InGaAs multiple quantum wells by photoluminescence

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple‐quantum‐well structure have been investigated by low‐temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1, 2, 3, 5, 10, 20, and 70 monolayers, respectively, on top of a 200‐nm‐thick layer of InGaAs for calibration. The design of this structure allowed etch‐induced damage depth to be obtained from the PL spectra due to the different confinement energies of the quantum wells. The samples showed no significant decrease of luminescence intensity after RIE. However, the observed shift and broadening of the PL peaks from the quantum wells indicate that intermixing of well and barrier material increased with etch time. © 1995 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70403/2/JAPIAU-78-3-1528-1.pd

Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.Comment: 8 pages, 7 figures, revtex, eps

How quantum bound states bounce and the structure it reveals

We investigate how quantum bound states bounce from a hard surface. Our analysis has applications to ab initio calculations of nuclear structure and elastic deformation, energy levels of excitons in semiconductor quantum dots and wells, and cold atomic few-body systems on optical lattices with sharp boundaries. We develop the general theory of elastic reflection for a composite body from a hard wall. On the numerical side we present ab initio calculations for the compression of alpha particles and universal results for two-body states. On the analytical side we derive a universal effective potential that gives the reflection scattering length for shallow two-body states.Comment: final publication version, new lattice results on alpha particle compression, 5 pages, 2 figure

Electronic structure of strained InP/GaInP quantum dots

We calculate the electronic structure of nm scale InP islands embedded in $Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.Comment: Typographical error corrected in strain Hamiltonia

Effect of deconfinement on resonant transport in quantum wires

The effect of deconfinement due to finite band offsets on transport through quantum wires with two constrictions is investigated. It is shown that the increase in resonance linewidth becomes increasingly important as the size is reduced and ultimately places an upper limit on the energy (temperature) scale for which resonances may be observed.Comment: 6 pages, 6 postscript files with figures; uses REVTe

Multi-Exciton Spectroscopy of a Single Self Assembled Quantum Dot

We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic states among which excitons thermalize within their lifetime. Once these few states are fully occupied, broad bands appear due to transitions between states which contain continuum electrons.Comment: 12 pages, 4 figures, submitted for publication on Jan,28 199