363 research outputs found

    サイブンカサレタシュウダンノスウリイデンガクテキカイセキ

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    京都大学0048新制・論文博士理学博士乙第1857号論理博第363号新制||理||147(附属図書館)3177UT51-46-G136(主査)教授 皆川 貞一, 教授 寺本 英, 教授 山口 昌哉学位規則第5条第2項該当Kyoto UniversityDA

    Simulation of running impact using a viscoelastic model considering contact phase

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    AbstractThe purposes of this study were to develop and validate a new viscoelastic model which can consider the contact phases of running. For these purposes, a simple mechanical model of the human body including two contact points was developed. Three healthy male performed barefoot running at different speeds. The simulated values during the passive phase using this model were well estimated. It was shown that this new model may be useful to analyze the impact force during running

    Propagation loss on a Si-Slab Waveguide: Simulation revisited

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    Slab waveguide is one of the simplest types of optical waveguide, the confinement factor is only determined by the thickness of one side so that the propagation of light passing through it will be confined in the material. The slab waveguide is built from Si as the core material and SiO2 as the substrate. The use of various optical waveguides is very dependent on the objectives to be achieved in its application, for it is very important to know the characteristics of each optical waveguide. In this paper the writer wants to know the characteristics of a slab waveguide, specifically with regard to propagation loss. The simulation results show that the propagation loss in the slab waveguide design that the authors propose is around 0.1dB / mm in TE mode conditions. The occurrence of propagation loss in the simulation is likely due to imperfections in determining the effective material index in the design of the slab waveguide

    GaInAsP/InP quantum wire lasers

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    金沢大学理工研究域電子情報学系Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics. © 2006 IEEE

    Molecular evolution in papova viruses and their host species, and in bacteriophages : (evolution, nucleotide substitution, papova viruses)

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    Comparing homologous genes of three papova viral genomes, we attempt to show the very close relative phylogeny among the viral species and their host species, and therefore the viral species seem to have evolved with their host organisms (SOEDA et al. 1980). Additionally, the DNA-sequence data of bacteriophages [lowercase phi]X174 and G4 and their overlapping genes will be examined for evolutionary patterns. It will then be made evident that overlapping genes have a quite different substitutional pattern with respect to the position of nucleotides in the codons than do non-overlapping sequences. Namely, in overlapping regions the third positions are usually substituted fastest, followed by the first positions, while the second positions are slowest in each gene, though different genes may have different rates of nucleotide substitution. With overlapping genes, this pattern does not apply, but rather is altered because of an interaction between the substitution rates in the two genes involved in an overlap.TAKEO MARUYAMA and EIICHI SOEDA, National Institute of Genetics, Mishima, 411 JAPAN

    III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI

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    金沢大学理工研究域電子情報学系InP-based photonic devices on SOI substrate using bonding technologies were demonstrated. Direct bonding and BCB bonding enable us to realize high optical confinement DFB lasers and other devices for intra/inter-chip connection in Si LSI circuit. Low threshold optical pumped membrane lasers and CW-operation of lateral current injection lasers with thin lateral cladding lasers were realized. ©2009 IEEE
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