Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.Comment: 5 pages, 3 figures, submitted to Phys Rev

A lattice gas model of II-VI(001) semiconductor surfaces

We introduce an anisotropic two-dimensional lattice gas model of metal terminated II-IV(001) seminconductor surfaces. Important properties of this class of materials are represented by effective NN and NNN interactions, which result in the competition of two vacancy structures on the surface. We demonstrate that the experimentally observed c(2x2)-(2x1) transition of the CdTe(001) surface can be understood as a phase transition in thermal equilbrium. The model is studied by means of transfer matrix and Monte Carlo techniques. The analysis shows that the small energy difference of the competing reconstructions determines to a large extent the nature of the different phases. Possible implications for further experimental research are discussed.Comment: 7 pages, 2 figure

Nanostenciling for fabrication and interconnection of nanopatterns and microelectrodes

Stencil lithography is used for patterning and connecting nanostructures with metallic microelectrodes in ultrahigh vacuum. Microelectrodes are fabricated by static stencil deposition through a thin silicon nitride membrane. Arbitrary nanoscale patterns are then deposited at a predefined position relative to the microelectrodes, using as a movable stencil mask an atomic force microscopy (AFM) cantilever in which apertures have been drilled by focused ion beam. Large scale AFM imaging, combined with the use of a high precision positioning table, allows inspecting the microelectrodes and positioning the nanoscale pattern with accuracy better than 100 nm

Nanostenciling for combinatorial fabrications and interconnections of nanopatterns and microelectrodes

Stencil lithography is used for patterning and connecting nanostructures with metallic microelectrodes in ultrahigh vacuum. Microelectrodes are fabricated by static stencil deposition through a thin silicon nitride membrane. Arbitrary nanoscale patterns are then deposited at a predefined position relative to the microelectrodes, using as a movable stencil mask an atomic force microscopy (AFM) cantilever in which apertures have been drilled by focused ion beam. Large scale AFM imaging, combined with the use of a high precision positioning table, allows inspecting the microelectrodes and positioning the nanoscale pattern with accuracy better than 100 nm