Changes in Fitness, physical activity, fatness, and screen time: A longitudinal study in children and adolescents

*_Objective:_* To analyze whether changes in Physical Activity Index (PAI), sedentary time (ST; TV and PC use), and Body Mass Index (BMI) made a significant contribution to longitudinal changes in Physical Fitness (PF) of children and adolescents. Additionally, we analyzed interaction between baseline fitness level and changes in fitness. 

*_Methods:_* This is a three years longitudinal study of 345 high school students aged 11-19 years. Students were invited to perform tests from Fitnessgram battery for strength (curl-ups, push-up), and Cardiorespiratory fitness (20m-shuttle run). PAI and ST were evaluated using a standard questionnaire. Standardized scores of physical fitness tests were summed (ZPF). Changes over time, were calculated Δ1 (TP1 minus TP0), Δ2 (TP2 minus TP1), and Δ~total~ (TP2 minus TP0). 

*_Results:_* Changes in PAI were positively and independently associated with changes in ZPF in Δ1, Δ2, and Δ~total~. No significant associations of ΔST and ΔZPF were found. ΔBMI was negative associated with ΔZPF in Δtotal. Participants with higher fitness levels at baseline were those who showed positive changes in PAI over Δ~total~, decreased screen time and had the lowest increase in BMI over three years compared with those who were low-fit at baseline. Conclusions: Changes in PAI were the best predictor for changes in Fitness in children and adolescents in each year and over the three years of evaluation. BMI changes were associated with longitudinal changes in PF

Electrospun Stacked Dual-Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Funding Information: This work was supported by National Natural Science Foundation of China (11774001) and Anhui Project (Z010118169). Publisher Copyright: © 2022 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Thin-film transistors based on metal oxide semiconductors have become a mainstream technology for application in driving low-cost backplanes of active matrix liquid crystal displays. Although significant progress has been made in traditional marketable devices based on physical vapor deposition derived metal oxides, it has still been hindered by low yield and poor compatibility. Fortunately, developing solution-based 1D nanofiber networks to act as the fundamental building blocks for transistor has proven to be a simpler, higher-throughput approach. However, oxide transistors based on such princesses suffer from degraded carrier mobility and operational instability, preventing the ability of such devices from replacing present polycrystalline Si technologies. Herein, it is shown that double channel heterojunction transistors with high electron mobility (>40 cm2 V−1 s−1) and operational stability can be achieved from electrospun double channels composed of In2O3 and ZnO layers. Adjusting the stacking order and the stacking density of In2O3 and ZnO layers can effectively optimize the interface electron trap, leading to the formation of 2D electron gas and the reduction of stress-induced instability. These findings further elucidate the significant advance of electrospinning-derived double channel heterojunction transistors toward practical applications for future low-cost and high-performance electronics.publishersversionpublishe

Humidity induces changes in the dimensions of hydrogel-coated wool yarns

Polymeric hydrogel based on acrylic acid (AA) and N,N-dimethylacrylamide (DMAA) was prepared by photopolymerization reaction, using nano-alumina as the inorganic crosslinker. Hydrogel-coated wool yarns determine their dimensional changes under humidity conditions. Surface morphology of the hydrogel-coated wool yarns was carried out using SEM microscopy. The hydrogel was further characterized by Fourier transformer infrared spectrum (FTIR), gel permeation chromatography (GPC), differential scanning calorimetry (DSC), thermogravimetry (TG) and differential thermogravimetry (DTG). This contribution showed that UV-initiated polymerization coating wool yarns can change the functional properties of wool fibers.ThisresearchwassupportedbytheFundamentalResearchFundsfortheCentralUniversities (JUSRP115A03) and Chinese Foundation Key Projects of Governmental Cooperation in International Scientific and Technological Innovation (2016YFE0115700). This study was also supported by the Portuguese Foundation for Science and Technology (FCT) under the scope of the strategic funding of UID/BIO/04469/2013 unit and COMPETE 2020 (POCI-01-0145-FEDER-006684) and BioTecNorte operation (NORTE-01-0145-FEDER-000004) funded by the European Regional Development Fund under the scope of Norte2020—Programa Operacional Regional do Norte.info:eu-repo/semantics/publishedVersio

Electrospinning-Driven Binary Oxide Nanofiber Networks with Tunable Amorphous Microstructure for Booming Transistors and Circuits Operation

Funding Information: This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11774001 and 52202156). The authors also acknowledge the support from Anhui Project (No.Z010118169), and the Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (MEMSZJERC2202). Publisher Copyright: © 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.Although In2O3 nanofibers (NFs) are regarded as one of the active channel materials for next-generation, low-cost thin-film transistors (TFTs), these NFs-based devices still suffer from the degraded carrier mobility and operational instability, limiting the ability of such devices to replace current polycrystalline silicon technologies. Here, it is shown that nanofiber channel transistors with high electron mobility and operational stability can be achieved by selectively doping Zn element into electrospun In2O3 NFs. By precisely manipulating the doping level during NFs fabrication, their crystallinity, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. It has been detected that InZnO/SiO2 TFTs with an optimized Zn doping concentration of 50% have demonstrated the high field-effect mobility (µFE) of 6.38 cm2 V−1 s−1, the larger ION/IOFF of 4.12 × 107 and operation in the energy-efficient enhancement-mode. Low frequency noise (LFN) measurements have displayed that the scattering and defects inside the NFs are effectively suppressed by the particular microstructure. When integrating ALD-derived Al2O3 films as the gate dielectric into TFTs devices, their electron mobility and ION/IOFF can be further improved to 37.82 cm2 V−1 s−1 and 2.92 × 108, respectively. To demonstrate the potential toward more complex logic applications, a low voltage resistor-loaded unipolar inverter is built by using InZnO/Al2O3 TFT, exhibiting a high gain of 20.95 and full swing characteristics. These optimized parameters have demonstrated the significant advance of this electrospinning technique toward practical applications for high performance and large-scale electronics.publishersversionpublishe