2,238 research outputs found

    Note about a second "evidence" for a WIMP annual modulation

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    This note, with its five questions, is intended to contribute to a clarification about a claimed "evidence" by the DAMA group of an annual modulation of the counting rate of a Dark Matter NaI(Tl) detector as due to a neutralino (SUSY-LSP) Dark Matter candidate.Comment: LaTex, 3 pages, 2 figure

    Impact of local stacking on the graphene-impurity interaction: theory and experiments

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    We investigate the graphene-impurity interaction problem by combining experimental - scanning tunneling microscopy (STM) and spectroscopy (STS) - and theoretical - Anderson impurity model and density functional theory (DFT) calculations - techniques. We use graphene on the SiC(000-1)(2x2)_C reconstruction as a model system. The SiC substrate reconstruction is based on silicon adatoms. Graphene mainly interacts with the dangling bonds of these adatoms which act as impurities. Graphene grown on SiC(000-1)(2x2)_C shows domains with various orientations relative to the substrate so that very different local graphene/Si adatom stacking configurations can be probed on a given grain. The position and width of the adatom (impurity) state can be analyzed by STM/STS and related to its local environment owing to the high bias electronic transparency of graphene. The experimental results are compared to Anderson's model predictions and complemented by DFT calculations for some specific local environments. We conclude that the adatom resonance shows a smaller width and a larger shift toward the Dirac point for an adatom at the center of a graphene hexagon than for an adatom just on top of a C graphene atom.Comment: 13 pages, 6 figures, Accepted for publication in Phys. Rev.

    Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale

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    Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy can be used to probe these unique symmetry properties at the nanometer scale. They are reflected in the quantum interference pattern resulting from elastic scattering off impurities, and they can be directly read from its fast Fourier transform. Our data, complemented by theoretical calculations, demonstrate that the pseudospin and the electronic chirality in epitaxial graphene on SiC(0001) correspond to the ones predicted for ideal graphene.Comment: 4 pages, 3 figures, minor change

    A Calibrated Time Domain Envelope Measurement System for the Behavioral Modeling of Power Amplifiers

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    This paper presents a set-up which enables the generation and the calibrated time domain measurements of complex envelopes of modulated signals at both ports of non linear microwave power amplifiers. The architecture of the characterization tool is given. Examples of error corrected time domain envelopes at the input / output RF ports of a 36 dBm output power – 30dB power gain L-band SSPA are shown. Futhermore, the use of this characterization tool and a suitable processing of measurement data are applied to a novel measurement based behavioral modeling approach of non linear devices accounting for memory effects

    Graphene on the C-terminated SiC (000 1ˉ\bar{1}) surface: An ab initio study

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    The atomic and electronic structures of a graphene layer on top of the (2×2)(2\times2) reconstruction of the SiC (0001ˉ\bar{1}) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here. Si adatoms passivate the substrate surface so that the very first C layer presents a linear dispersion characteristic of graphene. A small graphene-substrate interaction remains in agreement with scanning tunneling experiments (F.Hiebel et al. {\it Phys. Rev. B} {\bf 78} 153412 (2008)). The stacking geometry has little influence on the interaction which explains the rotational disorder observed on this face.Comment: 4 pages, 3 figures, additional materia
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