Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures

We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We demonstrate a way of extracting quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states from the data. This information is very useful from the perspective of molecular beam epitaxy (MBE) growth. It is difficult to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to have a large enough spacer layer to reduce scattering and switching noise from remote ionsied dopants.Comment: 4 pages, 5 eps figure

Quantum switches and quantum memories for matter-wave lattice solitons

We study the possibility of implementing a quantum switch and a quantum memory for matter wave lattice solitons by making them interact with "effective" potentials (barrier/well) corresponding to defects of the optical lattice. In the case of interaction with an "effective" potential barrier, the bright lattice soliton experiences an abrupt transition from complete transmission to complete reflection (quantum switch) for a critical height of the barrier. The trapping of the soliton in an "effective" potential well and its release on demand, without loses, shows the feasibility of using the system as a quantum memory. The inclusion of defects as a way of controlling the interactions between two solitons is also reported

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).Comment: 4 pages, 4 figures; added figures, references, equations, and text; results/conclusions otherwise unchange

Genome of the Komodo dragon reveals adaptations in the cardiovascular and chemosensory systems of monitor lizards

Monitor lizards are unique among ectothermic reptiles in that they have high aerobic capacity and distinctive cardiovascular physiology resembling that of endothermic mammals. Here, we sequence the genome of the Komodo dragon Varanus komodoensis, the largest extant monitor lizard, and generate a high-resolution de novo chromosome-assigned genome assembly for V. komodoensis using a hybrid approach of long-range sequencing and single-molecule optical mapping. Comparing the genome of V. komodoensis with those of related species, we find evidence of positive selection in pathways related to energy metabolism, cardiovascular homoeostasis, and haemostasis. We also show species-specific expansions of a chemoreceptor gene family related to pheromone and kairomone sensing in V. komodoensis and other lizard lineages. Together, these evolutionary signatures of adaptation reveal the genetic underpinnings of the unique Komodo dragon sensory and cardiovascular systems, and suggest that selective pressure altered haemostasis genes to help Komodo dragons evade the anticoagulant effects of their own saliva. The Komodo dragon genome is an important resource for understanding the biology of monitor lizards and reptiles worldwide

Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx{6\times10^{11}\rm{cm}^{-2}}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.Comment: 4 pages, 3 eps figure

Dual-gated bilayer graphene hot electron bolometer

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms are employed to optimize performance in different spectral ranges. Graphene is a unique material with strong, nearly frequency-independent light-matter interaction from far infrared to ultraviolet, with potential for broadband photonics applications. Moreover, graphene's small electron-phonon coupling suggests that hot-electron effects may be exploited at relatively high temperatures for fast and highly sensitive detectors in which light energy heats only the small-specific-heat electronic system. Here we demonstrate such a hot-electron bolometer using bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The measured large electron-phonon heat resistance is in good agreement with theoretical estimates in magnitude and temperature dependence, and enables our graphene bolometer operating at a temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We employ a pump-probe technique to directly measure the intrinsic speed of our device, >1 GHz at 10 K.Comment: 5 figure

Silicon Mie Resonators for Highly Directional Light Emission from monolayer MoS2

Controlling light emission from quantum emitters has important applications ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries, such as wires and spheres, support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state, and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a Si nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a Si nanowire

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demonstrate this principle for the first time using bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible that allows direct optical probing of these Berry-phase related properties. We show that the optical circular dichroism, which reflects the orbital magnetic moment in the valleys, can be continuously tuned from -15% to 15% as a function of gate voltage in bilayer MoS2 field-effect transistors. In contrast, the dichroism is gate-independent in monolayer MoS2, which is structurally non-centrosymmetric. Our work demonstrates the ability to continuously vary orbital magnetic moments between positive and negative values via symmetry control. This represents a new approach to manipulating Berry-phase effects for applications in quantum electronics associated with 2D electronic materials.Comment: 13 pages main text + 4 pages supplementary material

Quantum magneto-optics of graphite family

The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T and in the semiclassical approach for weak fields when the Fermi energy is much larger than the cyclotron frequency. The main optical transitions obey the selection rule with \Deltan = 1 for the Landau number n, however the \Deltan = 2 transitions due to the trigonal warping are also possible. The Faraday/Kerr rotation and light transmission/reflection in the quantizing magnetic fields are calculated. Parameters of the Slonczewski-Weiss-McClure model are used in the fit taking into account the previous dHvA measurements and correcting some of them for the case of strong magnetic fields.Comment: 28 pages, 12 figures. arXiv admin note: text overlap with arXiv:1106.340

PTHrP Induces Autocrine/Paracrine Proliferation of Bone Tumor Cells through Inhibition of Apoptosis

Giant Cell Tumor of Bone (GCT) is an aggressive skeletal tumor characterized by local bone destruction, high recurrence rates and metastatic potential. Previous work in our lab has shown that the neoplastic cell of GCT is a proliferating pre-osteoblastic stromal cell in which the transcription factor Runx2 plays a role in regulating protein expression. One of the proteins expressed by these cells is parathryroid hormone-related protein (PTHrP). The objectives of this study were to determine the role played by PTHrP in GCT of bone with a focus on cell proliferation and apoptosis. Primary stromal cell cultures from 5 patients with GCT of bone and one lung metastsis were used for cell-based experiments. Control cell lines included a renal cell carcinoma (RCC) cell line and a human fetal osteoblast cell line. Cells were exposed to optimized concentrations of a PTHrP neutralizing antibody and were analyzed with the use of cell proliferation and apoptosis assays including mitochondrial dehydrogenase assays, crystal violet assays, APO-1 ELISAs, caspase activity assays, flow cytometry and immunofluorescent immunohistochemistry. Neutralization of PTHrP in the cell environment inhibited cell proliferation in a consistent manner and induced apoptosis in the GCT stromal cells, with the exception of those obtained from a lung metastasis. Cell cycle progression was not significantly affected by PTHrP neutralization. These findings indicate that PTHrP plays an autocrine/paracrine neoplastic role in GCT by allowing the proliferating stromal cells to evade apoptosis, possibly through non-traditional caspase-independent pathways. Thus PTHrP neutralizing immunotherapy is an intriguing potential therapeutic strategy for this tumor