Tip-Enhanced Raman Spectroscopy of 2D Semiconductors

Two-dimensional (2D) semiconductors are one of the most extensively studied modern materials showing potentials in large spectrum of applications from electronics/optoelectronics to photocatalysis and CO2 reduction. These materials possess astonishing optical, electronic, and mechanical properties, which are different from their bulk counterparts. Due to strong dielectric screening, local heterogeneities such as edges, grain boundaries, defects, strain, doping, chemical bonding, and molecular orientation dictate their physical properties to a great extent. Therefore, there is a growing demand of probing such heterogeneities and their effects on the physical properties of 2D semiconductors on site in a label-free and non-destructive way. Tip-enhanced Raman spectroscopy (TERS), which combines the merits of both scanning probe microscopy and Raman spectroscopy, has experienced tremendous progress since its introduction in the early 2000s and is capable of local spectroscopic investigation with (sub-) nanometer spatial resolution. Introducing this technique to 2D semiconductors not only enables us to understand the effects of local heterogeneities, it can also provide new insights opening the door for novel quantum mechanical applications. This book chapter sheds light on the recent progress of local spectroscopic investigation and chemical imaging of 2D semiconductors using TERS. It also provides a basic discussion of Raman selection rules of 2D semiconductors important to understand TERS results. Finally, a brief outlook regarding the potential of TERS in the field of 2D semiconductors is provided

Signature of lattice dynamics in twisted 2D homo/hetero-bilayers

Twisted 2D bilayer materials are created by artificial stacking of two monolayer crystal networks of 2D materials with a desired twisting angle $\theta$. The material forms a moir\'e superlattice due to the periodicity of both top and bottom layer crystal structure. The optical properties are modified by lattice reconstruction and phonon renormalization, which makes optical spectroscopy an ideal characterization tool to study novel physics phenomena. Here, we report a Raman investigation on a full period of the twisted bilayer (tB) WSe$_2$ moir\'e superlattice (\textit i.e. 0{\deg} $\leq \theta \leq$ 60{\deg}). We observe that the intensity ratio of two Raman peaks, $B_{2g}$ and $E_{2g}/A_{1g}$ correlates with the evolution of moir\'e period. The Raman intensity ratio as a function of twisting angle follows an exponential profile matching the moir\'e period with two local maxima at 0{\deg} and 60{\deg} and a minimum at 30{\deg}. Using a series of temperature-dependent Raman and photoluminescence (PL) measurements as well as \textit{ab initio} calculations, the intensity ratio $I_{B_{2g}}/I_{{E_{2g}}/{A_{1g}}}$ is explained as a signature of lattice dynamics in tB WSe$_2$ moir\'e superlattices. By further exploring different material combinations of twisted hetero-bilayers, the results are extended for all kinds of Mo- and W-based TMDCs.Comment: 22 pages, 12 fugure

Exciton tuning in monolayer WSe2_2 via substrate induced electron doping

We report on large exciton tuning in WSe$_2$ monolayers via substrate induced non-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$ exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe$_2$ is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WSe$_2$/hBN, and WSe$_2$/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe$_2$, which plays a central role in the fundamental understanding and further device development.Comment: 14 pages, 10 figure

Optical Response of CVD-Grown ML-WS2 Flakes on an Ultra-Dense Au NP Plasmonic Array

The combination of metallic nanostructures with two-dimensional transition metal dichalcogenides is an efficient way to make the optical properties of the latter more appealing for opto-electronic applications. In this work, we investigate the optical properties of monolayer WS2 flakes grown by chemical vapour deposition and transferred onto a densely-packed array of plasmonic Au nanoparticles (NPs). The optical response was measured as a function of the thickness of a dielectric spacer intercalated between the two materials and of the system temperature, in the 75–350 K range. We show that a weak interaction is established between WS2 and Au NPs, leading to temperature- and spacer-thickness-dependent coupling between the localized surface plasmon resonance of Au NPs and the WS2 exciton. We suggest that the closely-packed morphology of the plasmonic array promotes a high confinement of the electromagnetic field in regions inaccessible by the WS2 deposited on top. This allows the achievement of direct contact between WS2 and Au while preserving a strong connotation of the properties of the two materials also in the hybrid system

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources.Comment: 45 pages, 20 figures (5 main figures, 15 supporting figures

Advances in ultrafast plasmonics

In the past twenty years, we have reached a broad understanding of many light-driven phenomena in nanoscale systems. The temporal dynamics of the excited states are instead quite challenging to explore, and, at the same time, crucial to study for understanding the origin of fundamental physical and chemical processes. In this review we examine the current state and prospects of ultrafast phenomena driven by plasmons both from a fundamental and applied point of view. This research area is referred to as ultrafast plasmonics and represents an outstanding playground to tailor and control fast optical and electronic processes at the nanoscale, such as ultrafast optical switching, single photon emission and strong coupling interactions to tailor photochemical reactions. Here, we provide an overview of the field, and describe the methodologies to monitor and control nanoscale phenomena with plasmons at ultrafast timescales in terms of both modeling and experimental characterization. Various directions are showcased, among others recent advances in ultrafast plasmon-driven chemistry and multi-functional plasmonics, in which charge, spin, and lattice degrees of freedom are exploited to provide active control of the optical and electronic properties of nanoscale materials. As the focus shifts to the development of practical devices, such as all-optical transistors, we also emphasize new materials and applications in ultrafast plasmonics and highlight recent development in the relativistic realm. The latter is a promising research field with potential applications in fusion research or particle and light sources providing properties such as attosecond duration

Micro and Nano Raman Investigation of Two-Dimensional Semiconductors towards Device Application

Recent advances in nanoscale characterization and device fabrications have opened up opportunities for layered semiconductors in nanoelectronics and optoelectronics. Due to strong confinement in monolayer thickness, physical properties of this materials are greatly influenced by parameters such as strain, defects, and doping at the nanoscale. Therefore, understanding the effect of this parameters on layered semiconductors is the prerequisite for any device application. In this doctoral thesis, impact of such parameters on the optical properties of layered semiconductors are studied in nanoscale. MoS2, the most famous transition metal dechalcogenide (TMDC) (n-type semiconductor), and p-type GaSe, a member of metal monochalcogenide (MMC) are investigated in this work. Finally, in outlook, a device made of p-type few layer GaSe and n-type 1L-MoS2 is discussed

Micro and Nano Raman Investigation of Two-Dimensional Semiconductors towards Device Application

Recent advances in nanoscale characterization and device fabrications have opened up opportunities for layered semiconductors in nanoelectronics and optoelectronics. Due to strong confinement in monolayer thickness, physical properties of this materials are greatly influenced by parameters such as strain, defects, and doping at the nanoscale. Therefore, understanding the effect of this parameters on layered semiconductors is the prerequisite for any device application. In this doctoral thesis, impact of such parameters on the optical properties of layered semiconductors are studied in nanoscale. MoS2, the most famous transition metal dechalcogenide (TMDC) (n-type semiconductor), and p-type GaSe, a member of metal monochalcogenide (MMC) are investigated in this work. Finally, in outlook, a device made of p-type few layer GaSe and n-type 1L-MoS2 is discussed

Tailoring exciton dynamics in TMDC heterobilayers in the ultranarrow gap-plasmon regime

Abstract Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime