Evidence for a diamondlike electronic band structure of Si multilayers on Ag(111)

Silicon multilayers on Ag(111) have been suggested to exhibit the structure of silicene, a material that has been heralded as a novel basis for microelectronic applications. However, our angle-resolved photoemission spectra (ARPES) from silicon multilayers on Ag(111) and of the silver-induced reconstruction of Si(111) demonstrate, from the close match in the valence level band structures, that the films exhibit a sp3 diamondlike structure. This refutes the interpretation o silicon multilayers on Ag(111) as silicene, a conclusion that is strengthened by the observation from core level photoemission that significant silver segregation occurs to the surface of these layers

Absence of Dirac cones in monolayer silicene and multilayer Si films on Ag(111)

Monolayer silicene and multilayer silicon films on Ag(111) have been the subject of many investigations within the last few years. For both systems, photoemission data have been interpreted in terms of linearly dispersing bands giving rise to the characteristic Dirac cone features, similar to graphene. Here we demonstrate, on the basis of angle-resolved valence band and core level photoemission data that this assignment is not correct. The bands previously attributed to states with Dirac fermion character are shown to derive from Ag(111) interface and bulk states in the silicene monolayer and from the well-known Ag-View the MathML source(3×3)R30°-Si(111) structure in Si multilayers. These results question the validity of the claim that graphene-like silicene and silicene multilayers are in fact formed on Ag(111)

Phonon collapse and van der Waals melting of the 3D charge density wave of VSe2_2

Among transition metal dichalcogenides (TMDs), VSe$_2$ is considered to develop a purely 3-dimensional (3D) charge-density wave (CDW) at T$_{CDW}$=110 K. Here, by means of high resolution inelastic x-ray scattering (IXS), we show that the CDW transition is driven by the collapse of an acoustic mode at the critical wavevector \textit{q}$_{CDW}$= (2.25 0 0.7) r.l.u. and critical temperature T$_{CDW}$=110 K. The softening of this mode starts to be pronounced for temperatures below 2$\times$ T$_{CDW}$ and expands over a rather wide region of the Brillouin zone, suggesting a large contribution of the electron-phonon interaction to the CDW formation. This interpretation is supported by our first principles calculations that determine a large momentum-dependence of the electron-phonon interaction, peaking at the CDW wavevector, in the presence of nesting. Fully anharmonic {\it ab initio} calculations confirm the softening of one acoustic branch at \textit{q}$_{CDW}$ as responsible for the CDW formation and show that van der Waals interactions are crucial to melt the CDW. Our work also highlights the important role of out-of-plane interactions to describe 3D CDWs in TMDs

Systematics of electronic and magnetic properties in the transition metal doped Sb2_2Te3_3 quantum anomalous Hall platform

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state.Comment: 40 pages, 13 figure

Suppression of the vacuum space-charge effect in fs-photoemission by a retarding electrostatic front lens

The performance of time-resolved photoemission experiments at fs-pulsed photon sources is ultimately limited by the e–e Coulomb interaction, downgrading energy and momentum resolution. Here, we present an approach to effectively suppress space-charge artifacts in momentum microscopes and photoemission microscopes. A retarding electrostatic field generated by a special objective lens repels slow electrons, retaining the k-image of the fast photoelectrons. The suppression of space-charge effects scales with the ratio of the photoelectron velocities of fast and slow electrons. Fields in the range from −20 to −1100 V/mm for Ekin = 100 eV to 4 keV direct secondaries and pump-induced slow electrons back to the sample surface. Ray tracing simulations reveal that this happens within the first 40 to 3 μm above the sample surface for Ekin = 100 eV to 4 keV. An optimized front-lens design allows switching between the conventional accelerating and the new retarding mode. Time-resolved experiments at Ekin = 107 eV using fs extreme ultraviolet probe pulses from the free-electron laser FLASH reveal that the width of the Fermi edge increases by just 30 meV at an incident pump fluence of 22 mJ/cm2 (retarding field −21 V/mm). For an accelerating field of +2 kV/mm and a pump fluence of only 5 mJ/cm2, it increases by 0.5 eV (pump wavelength 1030 nm). At the given conditions, the suppression mode permits increasing the slow-electron yield by three to four orders of magnitude. The feasibility of the method at high energies is demonstrated without a pump beam at Ekin = 3830 eV using hard x rays from the storage ring PETRA III. The approach opens up a previously inaccessible regime of pump fluences for photoemission experiments

Slow Magnetic Relaxation of Dy Adatoms with In-Plane Magnetic Anisotropy on a Two-Dimensional Electron Gas

We report on the magnetic properties of Dy atoms adsorbed on the (001) surface of SrTiO3. X-ray magnetic circular dichroism reveals slow relaxation of the Dy magnetization on a time scale of about 800 s at 2.5 K, unusually associated with an easy-plane magnetic anisotropy. We attribute these properties to Dy atoms occupying hollow adsorption sites on the TiO2-terminated surface. Conversely, Ho atoms adsorbed on the same surface show paramagnetic behavior down to 2.5 K. With the help of atomic multiplet simulations and first-principles calculations, we establish that Dy populates also the top-O and bridge sites on the coexisting SrO-terminated surface. A simple magnetization relaxation model predicts these two sites to have an even longer magnetization lifetime than the hollow site. Moreover, the adsorption of Dy on the insulating SrTiO3 crystal leads, regardless of the surface termination, to the formation of a spin-polarized two-dimensional electron gas of Ti 3dxy character, together with an antiferromagnetic Dy-Ti coupling. Our findings support the feasibility of tuning the magnetic properties of the rare-earth atoms by acting on the substrate electronic gas with electric fields.We acknowldege funding from the National Research Council (CNR) within the CNR/CAS Cooperative Programme project "Advanced characterization methods for the study of rare-earth single-ion magnets on oxide substrates", from the Czech Academy of Sciences (Mobility Plus Project No. CNR-19-03), and from the Swiss National Science Foundation (200020_176932 and 200021_175941). ICN2 was funded by the CERCA Programme/Generalitat de Catalunya and supported by the Spanish Ministry of Economy and Competitiveness, MINECO (grant nos. SEV-2017-0706 and PID2019-107338RB-C65/AEI/10.13039/501100011033). IMDEA Nanociencia acknowledges support from the Severo Ochoa Programme for Centres of Excellence in R&D (MINECO, grant SEV-2016-0686).Peer reviewe

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Funding: We gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant. No. 15375) and the Centre of Excellence for Dirac Materials (Grant.No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grant Nos. DFF-9064-00057B and DFF-6108-00409). Access to the Artemis Facility was funded by STFC. I.M. acknowledges financial support by the International Max Planck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM). The authors also acknowledge The Royal Society and The Leverhulme Trust.The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS2 and WS2 on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS2. These multiple timescales are explained by Auger recombination involving MoS2 and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states.Publisher PDFPeer reviewe