Computation of Conductance and Capacitance for IC Interconnects on a General Lossy Multilayer Substrate

In this paper a simple method for analysis and modelling of transmission interconnect lines on general lossy multilayer substrates at high bit rates is presented. The analysis is based on semi-analytical Green's function approach and recurrence relation between the coefficients of potential in n and n + 1 layers, respectively. The electromagnetic concept of free charge density is applied. It allows us to obtain integral equations between electric scalar potential and charge density distributions. These equations are solved by the Galerkin procedure of the Method of Moments. New approach is especially adequate to model 2-D layered structures with planar boundaries for frequencies up to 20GHz (quasistationary field approach). The transmission line parameters (capacitance and conductance per unit length) for the given interconnect multilayer geometry are computed. A discussion of the calculated line admittance in terms of technological and geometrical parameters of the structure is given. A comparison of the numerical results from the new procedure with the techniques presented in the previous publications are provided, too

Efficient procedure for capacitance matrix calculation of multilayer VLSI interconnects using quasi-static analysis and Fourier series approach, Journal of Telecommunications and Information Technology, 2002, nr 2

In this paper, we present a new approach for capacitance matrix calculation of lossy multilayer VLSI interconnects based on quasi-static analysis and Fourier projection technique. The formulation is independent from the position of the interconnect conductors and number of layers in the structure, and is especially adequate to model 2D and 3D layered structures with planar boundaries. Thanks to the quasi-static algorithms considered for the capacitance analysis and the expansions in terms of convergent Fourier series the tool is reliable and very efficient; results can be obtained with relatively little programming effort. The validity of the technique is verified by comparing its results with on-surface MEI method, moment method for total charges in the structure, and CAD-oriented equivalent-circuit methodology, respectively

Non-specific LTD at parallel fibre - Purkinje cell synapses in cerebellar cortex provides robustness against local spatial noise during pattern recognition

© 2011 Safaryan et al; licensee BioMed Central Ltd. This is an open access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly citedPoster presented at CNS 2011Peer reviewe

The effect of non-specific LTD on pattern recognition in cerebellar Purkinje cells

© 2010 Safaryan et al; licensee BioMed Central Ltd.Poster presented at CNS 2010Peer reviewe

26th Annual Computational Neuroscience Meeting (CNS*2017): Part 3 - Meeting Abstracts - Antwerp, Belgium. 15–20 July 2017

This work was produced as part of the activities of FAPESP Research,\ud Disseminations and Innovation Center for Neuromathematics (grant\ud 2013/07699-0, S. Paulo Research Foundation). NLK is supported by a\ud FAPESP postdoctoral fellowship (grant 2016/03855-5). ACR is partially\ud supported by a CNPq fellowship (grant 306251/2014-0)

Method of filling an opening in an insulation layer

The present invention is about a method for filling an opening in an insulating layer in a fast and highly reliable way and can be used to fill openings such as trenches and via holes simultaneously. This method is based on the principle of reaction enhanced wetting and simultaneous seed layer formation. The idea is, in contrast to trying to avoid the TiAl3 formation, to use this reaction to its advantage for the creation of an ultra-thin continuous Al-containing seed layer. The latter allows a bottom to top fill during the subsequent Al-containing metal deposition. As a consequence, the filling process proceeds much faster and is production worthy

Interactions of implanted dopants and the metal/Si system: fundamental aspects and applications of ion beam mixing and dopant redistribution

SIGLEKULeuven Campusbibliotheek Exacte Wetenschappen / UCL - Université Catholique de LouvainBEBelgiu