60,025 research outputs found
Transmission of Water Waves under Multiple Vertical Thin Plates
The transmission of water waves under vertical thin plates, e.g., offshore floating breakwaters, oscillating water column wave energy converters, and so on, is a crucial feature that dominates the hydrodynamic performance of marine devices. In this paper, the analytical solution to the transmission of water waves under multiple 2D vertical thin plates is firstly derived based on the linear potential theory. The influences of relevant parameters on the wave transmission are discussed, which include the number of plates, the draft of plates, the distance between plates and the water depth. The analytical results suggest that the transmission of progressive waves gradually weakens with the growth of the number and draft of plates, and under the conditions of given number and draft of plates, the distribution of plates has significant influence on the transmission of progressive waves. The results of this paper contribute to the understanding of the transmission of water waves under multiple vertical thin plates, as well as the suggestion on optimal design of complex marine devices, such as a floating breakwater with multiple plates
The structural, mechanical, electronic, optical and thermodynamic properties of t-XAs (X Si, Ge and Sn) by first-principles calculations
The structural, mechanical, electronic, optical and thermodynamic properties
of the t-XAs (X Si, Ge and Sn) with
tetragonal structure have been investigated by first principles calculations.
Our calculated results show that these compounds are mechanically and
dynamically stable. By the study of elastic anisotropy, it is found that the
anisotropic of the t-SnAs is stronger than that
of t-SiAs and
t-GeAs. The band structures and density of states
show that the t-XAs (Si, Ge and Sn) are
semiconductors with narrow band gaps. Based on the analyses of electron density
difference, in t-XAs As atoms get electrons, X
atoms lose electrons. The calculated static dielectric constants,
, are 15.5, 20.0 and 15.1 eV for
t-XAs (X Si, Ge and Sn), respectively. The
Dulong-Petit limit of t-XAs is about 10 J
molK. The thermodynamic stability successively
decreases from t-SiAs to
t-GeAs to t-SnAs.Comment: 14 pages, 10 figures, 6 table
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