Semiclassical Dynamics from Zeno-Like measurements

The usual semiclassical approximation for atom-field dynamics consists in substituting the field operators by complex numbers related to the (supposedly large enough) intensity of the field. We show that a semiclassical evolution for coupled systems can always be obtained by frequent Zeno-like measurements on the state of one subsystems, independently of the field intensity in the example given. We study the Jaynes Cummings model from this perspective

Randomized study to compare efficacy of short stretch bandage systems from KOB with locally used Cotton Crepe Bandages in the treatment of lower limb lymphoedema

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Quantum Zeno and anti-Zeno effects by indirect measurement with finite errors

We study the quantum Zeno effect and the anti-Zeno effect in the case of `indirect' measurements, where a measuring apparatus does not act directly on an unstable system, for a realistic model with finite errors in the measurement. A general and simple formula for the decay rate of the unstable system under measurement is derived. In the case of a Lorentzian form factor, we calculate the full time evolutions of the decay rate, the response of the measuring apparatus, and the probability of errors in the measurement. It is shown that not only the response time but also the detection efficiency plays a crucial role. We present the prescription for observing the quantum Zeno and anti-Zeno effects, as well as the prescriptions for avoiding or calibrating these effects in general experiments.Comment: 4 pages, 3 figure

Evaluation of susceptibility testing methods for polymyxin

SummaryBackgroundThe widespread resistance in Gram-negative bacteria has necessitated evaluation of the use of older antimicrobials such as polymyxins. In the present study we evaluated the different susceptibility testing methods for polymyxins B and E against Gram-negative bacteria using the new Clinical and Laboratory Standards Institute (CLSI) guidelines.MethodsThe susceptibility of 281 multidrug-resistant (MDR) Gram-negative bacteria (GNB) to polymyxin B was evaluated, comparing broth microdilution (BMD; reference method), agar dilution, E-test, and disk diffusion. Disk diffusion testing of polymyxin B was also performed against 723 MDR GNB.ResultsTwenty-four of 281 (8.5%) isolates were found to be resistant to polymyxin B by the reference BMD method. The rates of very major errors for agar dilution and E-test (for polymyxin B) were 0.7% and 1%, respectively, and those for disk diffusion (for polymyxin B and polymyxin E) were 1% and 0.7%, respectively. For the 257 isolates found sensitive by reference BMD, the rates of major errors by agar dilution and E-test (for polymyxin B) were 2.4% and 0%, respectively, and those for disk diffusion (polymyxin B and polymyxin E) were 0% and 0.7%, respectively. Twenty-six (3.6%) of the 723 Gram-negative isolates were resistant to polymyxin B by disk diffusion.ConclusionThe E-test and agar dilution methods showed good concordance with BMD. The disk diffusion method can be useful for initial screening in diagnostic laboratories

The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon

When a thin Si1-x Gex epitaxial layer is grown on Si, it is under biaxial compression. In this letter, it is shown that a nickel germanosilicide (Ni Si1-x Gex) layer formed on Si1-x Gex can significantly reduce the in-plane compressive strain in Si1-x Gex. It is proposed that the observed reduction is due to the biaxial tensile stress applied by the Ni Si1-x Gex layer. Because the Si1-x Gex bandgap is a strong function of the strain, this is expected to have a strong impact on the metal-semiconductor barrier height and the contact resistivity of the interface if the metal Fermi level is pinned near the Si1-x Gex midgap

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

The impact of heavy boron doping on the biaxial compressive strain in Si1-x Gex layers grown on Si has been investigated using Raman spectroscopy and theoretical calculations. It is shown that one boron atom is sufficient to compensate the strain due to approximately 6.9 Ge atoms. This effect is appreciably large for boron concentrations as low as 1%, typical for applications, which employ heavily boron doped layers. Using strain compensation, the Ge content can be substantially increased without increasing the stored strain energy. This phenomenon can be useful in applications, which require low-resistivity p -type strained Si1-x Gex layers with high Ge content

Integrated analysis for genotypic adaptation in rice

Development of varieties with high yield potential coupled with wide adaptability is an important plant breeding objective. The presence of genotype by environment (GxE) interaction plays a crucial role in determining the performance of genetic materials, tested at different locations and in different years. This study was undertaken to assess yield performance, stability and adaptability of thirty-six rice genotypes of three different maturity groups evaluated over 12 environments. There were highly significant (P<0.05) genotype-environment interaction in three different maturity groups. The AMMI analysis of variance in the maturity groups also showed significant genotype, location and G\ub4L. Stability in yield performance was predicted using nine stability parameters (b, S2d , CV, SF, R1, R2, W, S1 and ASV). The rank correlation coefficient among nine parameters indicated that the stability parameters were dissimilar in for all the maturity groups. Stability index (STI) computed by integrating all the nine stability parameters indicated that genotypes Lalat and OR 2006-12 of mid-early group, genotypes OR 1912-25, OR 2310-12 and MTU 1001 of mid-late group, and genotypes OR 1898-3-16, OR 1901-14-32, OR 2109-2, OR 2001-1, Mahanadi and Jagabandhu of late group yielded higher consistently over the 3 years in the different agroclimatic zones.Le d\ue9veloppement de vari\ue9t\ue9s \ue0 potentiel \ue9lev\ue9 de rendement coupl\ue9 \ue0 une large adaptabilit\ue9 est un objectif important de l'am\ue9lioration des plantes. La pr\ue9sence de g\ue9notype par interaction avec l'environnement (GxE) joue un r\uf4le crucial dans la d\ue9termination des performances de mat\ue9riels g\ue9n\ue9tiques test\ue9s dans diff\ue9rentes localisations et dans des ann\ue9es diff\ue9rentes. Cette'\ue9tude \ue9tait entreprise pour \ue9valuer la performance en rendement, la stabilit\ue9 et l'adaptabilit\ue9 de trente six g\ue9notypes de riz de trois groupes de maturit\ue9 diff\ue9rente \ue9valu\ue9es sur 12 environnements. L'interaction g\ue9notype-environnement \ue9tait significativement \ue9lev\ue9 (P<0.05) dans trois groupes de maturit\ue9 diff\ue9rente. L'analyse AMM de la variance dans les groupes de maturit\ue9 avait aussi montr\ue9 un effet significatif du g\ue9notype, localisation et G'L. La stabilit\ue9 en performance de rendement \ue9tait pr\ue9dite utilisant neuf param\ue8tres de stabilit\ue9 (b, S2d, CV, SF, R1, R2, W, S1 et ASV). Le rang du co\ue9fficient de corr\ue9lation parmi les neuf param\ue8tres a indiqu\ue9 que les param\ue8tres de stabilit\ue9\ue9taient dissemblables pour tous les groupes de maturit\ue9. L'index de stabilit\ue9 (STI) calcul\ue9 en int\ue9grant tous les neuf param\ue8tres de stabilit\ue9 a indiqu\ue9 que les g\ue9notypes Lalat et OR 2006-12 du mi-premier groupe, les g\ue9notypes OR 1912-25, OR 2310-12 et MTU 1001 du mi-dernier groupe et les g\ue9notypes OR 1898-3-16, OR 1901-14-32, OR 2109-2, OR 2001-1, Mahanadi et Jagabandhu du dernier groupe ont produit consid\ue9rablement de rendements tr\ue8s \ue9lev\ue9s au cours des 3 ans dans diff\ue9rentes zones agroclimatiques

Critical thickness of heavily boron-doped silicon-germanium alloys

In this work, the effect of boron concentration on the critical thickness of heavily boron doped Si1-x Gex alloys (Si1-x-y Gex By) has been studied using Raman spectroscopy. The experimental results indicate that while boron decreases the stored strain energy, it can substantially increase the critical thickness for a given Ge concentration. The Si1-x-y Gex By critical thickness was calculated using two different models based on energy balance and kinetic considerations. The results show that the kinetic model provides a good estimate for the Si1-x-y Gex By critical thickness

Continuous Monitoring of Dynamical Systems and Master Equations

We illustrate the equivalence between the non-unitary evolution of an open quantum system governed by a Markovian master equation and a process of continuous measurements involving this system. We investigate a system of two coupled modes, only one of them interacting with external degrees of freedom, represented, in the first case, by a finite number of harmonic oscillators, and, in the second, by a sequence of atoms where each one interacts with a single mode during a limited time. Two distinct regimes appear, one of them corresponding to a Zeno-like behavior in the limit of large dissipation