104,200 research outputs found
Structural and electronic properties of MgO nanotube clusters
Finite magnesium oxide nanotubes are investigated. Stacks of four parallel
squares, hexagons, octagons, and decagons are constructed and studied by the
pseudopotential density functional theory within the local-density
approximation. Optimized structures are slightly distorted stacks of polygons.
These clusters are insulators and the band gap of 8.5 eV is constant over an
investigated range of the diameters of stacked polygonal rings. Using the
L"owdin population analysis a charge transfer towards the oxygen atoms is
estimated as 1.4, which indicates that the mixed ionocovalent bonding exists in
investigated MgO nanotubes
The Fractional Quantum Hall States of Dirac Electrons in Graphene
We have investigated the fractional quantum Hall states for the Dirac
electrons in a graphene layer in different Landau levels. The relativistic
nature of the energy dispersion relation of the electrons in the graphene
significantly modifies the inter-electron interactions. This results in a
specific dependence of the ground state energy and the energy gaps for
electrons on the Landau level index. For the valley-polarized states, i.e. at
\nu =1/m, m being an odd integer, the energy gaps have the largest values in
the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3
state, the energy gaps are suppressed for the n=1 Landau level as compared to
the n=0 level. For both the n=1 and n=0 Landau levels the ground state of the
2/3 system is fully valley-unpolarized.Comment: accepted for publication in Phys. Rev. Let
A dc model for power switching transistors suitable for computer-aided design and analysis
A model for bipolar junction power switching transistors whose parameters can be readily obtained by the circuit design engineer, and which can be conveniently incorporated into standard computer-based circuit analysis programs is presented. This formulation results from measurements which may be made with standard laboratory equipment. Measurement procedures, as well as a comparison between actual and computed results, are presented
High-frequency high-voltage high-power DC-to-DC converters
The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated
Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters
Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated
Optical system for space simulator Patent Application
Optical system for increasing light beam intensity within solar simulator
Studies of the nucler equation of state using numerical calculations of nuclear drop collisions
A numerical calculation for the full thermal dynamics of colliding nuclei was developed. Preliminary results are reported for the thermal fluid dynamics in such processes as Coulomb scattering, fusion, fusion-fission, bulk oscillations, compression with heating, and collisions of heated nuclei
4He adsorbed inside (10,10) single walled carbon nanotubes
Diffusion Monte Carlo calculations on the adsorption of He in open-ended
single walled (10,10) nanotubes are presented. We have found a first order
phase transition separating a low density liquid phase in which all He
atoms are adsorbed close to the tube wall and a high density arrangement
characterized by two helium concentric layers. The energy correction due to the
presence of neighboring tubes in a bundle has also been calculated, finding it
negligible in the density range considered.Comment: 5 pages, accepted for publication in Phys. Rev.
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