Crystal-field effects in the first-order valence transition in YbInCu4 induced by an external magnetic field

As it was shown earlier [Dzero, Gor'kov, and Zvezdin, J. Phys.:Condens. Matter 12, L711 (2000)] the properties of the first-order valence phase transition in YbInCu4 in the wide range of magnetic fields and temperatures are perfectly described in terms of a simple entropy transition for free Yb ions. Within this approach, the crystal field effects have been taken into account and we show that the phase diagram in the $B-T$ plane acquires some anisotropy with respect to the direction of an external magnetic field.Comment: 4 pages, 3 eps figures; minor changes; to be piblished in J. of Physics: Cond. Ma

Peculiarities in Low Temperature Properties of Doped Manganites A1-xBxMnO3

The phase diagram and low temperature properties of the doped manganites A1-xBxMnO3 are discussed for the concentrations x < 0.4. The transition from insulating antiferromagnetic to metallic ferromagnetic state at x_cr = 0.16 is treated by means of percolation theory. The unifying description of insulating and metallic states is presented. The undoped manganite is a band insulator consisting of ferromagnetic layers, which are coupled antiferromagnetically along the c direction with a low Neel temperature. The metallic phase can be described by the two-band Fermi liquid picture. The behavior of conductivity, spin wave excitations, etc. is analyzed and the comparison with experimental data is carried out.Comment: To appear in EPJ, 35 pages, 5 figure

First order valence transition in YbInCu_4 in the (B,T) - plane

The puzzling properties of the first order phase transition in YbInCu$_4$ and its alloys in the wide range of magnetic fields and temperatures are perfectly described in terms of a simple entropy transition for free Yb ions. In particular, it turns out that the transition line in the $(B,T)$-plane is very close to the elliptic shape, as it has been observed experimentally. Similar calculations are done, and the experiments are proposed for the $(\gamma{-}\alpha)$ phase transition in Ce in Megagauss fields. We speculate, that in case of YbInCu$_4$ the first order transition is a Mott transition between a higher temperature phase in which localized moments are stabilized by the entropy terms in the free energy, and a band-like non-magnetic ground state of the $f$-electrons.Comment: RevTeX, 5 pages, 2 figure

Doping dependence of the exchange energies in bilayer manganites: Role of orbital degrees of freedom

Recently, an intriguing doping dependence of the exchange energies in the bilayer manganites $La_{2-2x}Sr_{1+2x}Mn_2O_7$ has been observed in the neutron scattering experiments. The intra-layer exchange only weakly changed with doping while the inter-layer one drastically decreased. Here we propose a theory which accounts for these experimental findings. We argue, that the observed striking doping dependence of the exchange energies can be attributed to the evaluation of the orbital level splitting with doping. The latter is handled by the interplay between Jahn-Teller effect (supporting an axial orbital) and the orbital anisotropy of the electronic band in the bilayer structure (promoting an in-plane orbital), which is monitored by the Coulomb repulsion. The presented theory, while being a mean-field type, describes well the experimental data and also gives the estimates of the several interesting energy scales involved in the problem.Comment: Added references, corrected typos. To appear in Phys. Rev.

On the exciton binding energy in a quantum well

We consider a model describing the one-dimensional confinement of an exciton in a symmetrical, rectangular quantum-well structure and derive upper and lower bounds for the binding energy $E_b$ of the exciton. Based on these bounds, we study the dependence of $E_b$ on the width of the confining potential with a higher accuracy than previous reports. For an infinitely deep potential the binding energy varies as expected from $1 Ry$ at large widths to $4 Ry$ at small widths. For a finite potential, but without consideration of a mass mismatch or a dielectric mismatch, we substantiate earlier results that the binding energy approaches the value $1 Ry$ for both small and large widths, having a characteristic peak for some intermediate size of the slab. Taking the mismatch into account, this result will in general no longer be true. For the specific case of a $Ga_{1-x}Al_{x}As/GaAs/Ga_{1-x}Al_{x}As$ quantum-well structure, however, and in contrast to previous findings, the peak structure is shown to survive.Comment: 32 pages, ReVTeX, including 9 figure

Mean parameter model for the Pekar-Fr\"{o}hlich polaron in a multilayered heterostructure

The polaron energy and the effective mass are calculated for an electron confined in a finite quantum well constructed of $GaAs/Al_x Ga_{1-x} As$ layers. To simplify the study we suggest a model in which parameters of a medium are averaged over the ground-state wave function. The rectangular and the Rosen-Morse potential are used as examples. To describe the confined electron properties explicitly to the second order of perturbations in powers of the electron-phonon coupling constant we use the exact energy-dependent Green function for the Rosen-Morse confining potential. In the case of the rectangular potential, the sum over all intermediate virtual states is calculated. The comparison is made with the often used leading term approximation when only the ground-state is taken into account as a virtual state. It is shown that the results are quite different, so the incorporation of all virtual states and especially those of the continuous spectrum is essential. Our model reproduces the correct three-dimensional asymptotics at both small and large widths. We obtained a rather monotonous behavior of the polaron energy as a function of the confining potential width and found a peak of the effective mass. The comparison is made with theoretical results by other authors. We found that our model gives practically the same (or very close) results as the explicit calculations for potential widths $L \geq 10 \AA$.Comment: 12 pages, LaTeX, including 5 PS-figures, subm. to Phys. Rev. B, new data are discusse

Spin Waves in Canted Phases: An Application to Doped Manganites

We present the effective lagrangian for low energy and momentum spin waves in canted phases at next to leading order in the derivative expansion. The symmetry breaking pattern SU(2) --> 1 of the internal spin group and that of the crystallographic space group imply that there is one ferromagnetic and one antiferromagnetic spin wave. The interaction of the spin waves with the charge carriers is also discussed for canted, ferromagnetic and antiferromagnetic phases. All this together allows us to write the doping dependence of the dispersion relation parameters for doped manganites. We point out that the spin waves posses distinctive characteristics which may allow us to experimentally differentiate canted phases from phase separation regions in doped manganites.Comment: 34 pages, latex file, 1 eps included figure. Minor changes, published versio

Valence Fluctuations Revealed by Magnetic Field Scan: Comparison with Experiments in YbXCu_4 (X=In, Ag, Cd) and CeYIn_5 (Y=Ir, Rh)

The mechanism of how critical end points of the first-order valence transitions (FOVT) are controlled by a magnetic field is discussed. We demonstrate that the critical temperature is suppressed to be a quantum critical point (QCP) by a magnetic field. This results explain the field dependence of the isostructural FOVT observed in Ce metal and YbInCu_4. Magnetic field scan can lead to reenter in a critical valence fluctuation region. Even in the intermediate-valence materials, the QCP is induced by applying a magnetic field, at which the magnetic susceptibility also diverges. The driving force of the field-induced QCP is shown to be a cooperative phenomenon of the Zeeman effect and the Kondo effect, which creates a distinct energy scale from the Kondo temperature. The key concept is that the closeness to the QCP of the FOVT is capital in understanding Ce- and Yb-based heavy fermions. It explains the peculiar magnetic and transport responses in CeYIn_5 (Y=Ir, Rh) and metamagnetic transition in YbXCu_4 for X=In as well as the sharp contrast between X=Ag and Cd.Comment: 14 pages, 9 figures, OPEN SELECT in J. Phys. Soc. Jp

Suppression of the γ−α\gamma-\alpha structural phase transition in Ce0.8La0.1Th0.1Ce_{0.8} La_{0.1} Th_{0.1} by large magnetic fields

The $\gamma-\alpha$ transition in Ce$_{0.8}$La$_{0.1}$Th$_{0.1}$ is measured as a function of applied magnetic field using both resistivity and magnetization. The $\gamma - \alpha$ transition temperature decreases with increasing magnetic field, reaching zero temperature at around 56 T. The magnetic-field dependence of the transition temperature may be fitted using a model that invokes the field and temperature dependence of the entropy of the $4f$-electron moments of the $\gamma$ phase, suggesting that the volume collapse in Ce and its alloys is primarily driven by entropic considerations

Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio