Polarized 3 parton production in inclusive DIS at small x

Azimuthal angular correlations between produced hadrons/jets in high energy collisions are a sensitive probe of the dynamics of QCD at small x. Here we derive the triple differential cross section for inclusive production of 3 polarized partons in DIS at small x using the spinor helicity formalism. The target proton or nucleus is described using the Color Glass Condensate (CGC) formalism. The resulting expressions are used to study azimuthal angular correlations between produced partons in order to probe the gluon structure of the target hadron or nucleus. Our analytic expressions can also be used to calculate the real part of the Next to Leading Order (NLO) corrections to di-hadron production in DIS by integrating out one of the three final state partons.Comment: 5 pages, 6 figures; version accepted for publication in Physics Letters

Broadening of H2_2O rotational lines by collision with He atoms at low temperature

We report pressure broadening coefficients for the 21 electric-dipole transitions between the eight lowest rotational levels of ortho-H$_2$O and para-H$_2$O molecules by collisions with He at temperatures from 20 to 120 K. These coefficients are derived from recently published experimental state-to-state rate coefficients for H$_2$O:He inelastic collisions, plus an elastic contribution from close coupling calculations. The resulting coefficients are compared to the available experimental data. Mostly due to the elastic contribution, the pressure broadening coefficients differ much from line to line, and increase markedly at low temperature. The present results are meant as a guide for future experiments and astrophysical observations.Comment: 2 figures, 2 table

How different Fermi surface maps emerge in photoemission from Bi2212

We report angle-resolved photoemission spectra (ARPES) from the Fermi energy ($E_F$) over a large area of the ($k_x,k_y$) plane using 21.2 eV and 32 eV photons in two distinct polarizations from an optimally doped single crystal of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment and clarify how myriad Fermi surface (FS) maps emerge in ARPES under various experimental conditions. The energy and polarization dependences of the ARPES matrix element help disentangle primary contributions to the spectrum due to the pristine lattice from those arising from modulations of the underlying tetragonal symmetry and provide a route for separating closely placed FS sheets in low dimensional materials.Comment: submitted to PR

Mixing Effects in the Crystallization of Supercooled Quantum Binary Liquids

By means of Raman spectroscopy of liquid microjets we have investigated the crystallization process of supercooled quantum liquid mixtures composed of parahydrogen (pH$_2$) diluted with small amounts of up to 5\% of either neon or orthodeuterium (oD$_2$), and of oD$_2$ diluted with either Ne or pH$_2$. We show that the introduction of Ne impurities affects the crystallization kinetics in both the pH$_2$-Ne and oD$_2$-Ne mixtures in terms of a significant reduction of the crystal growth rate, similarly to what found in our previous work on supercooled pH$_2$-oD$_2$ liquid mixtures [M. K\"uhnel et {\it al.}, Phys. Rev. B \textbf{89}, 180506(R) (2014)]. Our experimental results, in combination with path-integral simulations of the supercooled liquid mixtures, suggest in particular a correlation between the measured growth rates and the ratio of the effective particle sizes originating from quantum delocalization effects. We further show that the crystalline structure of the mixture is also affected to a large extent by the presence of the Ne impurities, which likely initiate the freezing process through the formation of Ne crystallites.Comment: 19 pages, 7 figures, submitted to J. Chem. Phy

Evaluación del dispositivo Pavement Quality Indicator (PQI) en la determinación de la densidad in situ de mezclas fabricadas con emulsión bituminosa

The Pavement Quality Indicator (PQI) is a non-nuclear gauge used for the on-site density measurement of asphalt pavements without the need to extract core samples. Previous studies of hot asphalt mixes found that PQI density readings were very similar to laboratory density measurements of pavement cores. This paper describes the first stage of a research project whose objective is to analyze PQI density measurements of mixes manufactured with an asphalt emulsion binder. The PQI density variability for such mixes was verified and compared with the results obtained with other on-site methods for measuring pavement density.El equipo Pavement Quality Indicator es un dispositivo para la determinación de densidad in situ en pavimentos asfálticos sin extracción de testigos. Las experiencias con este equipo en mezclas bituminosas en caliente, recogidas en diferentes fuentes bibliográficas, muestran que las densidades medidas in situ con el PQI son muy similares a las obtenidas mediante la extracción de testigos. En este artículo se expone la primera etapa de un proyecto de investigación que tiene por objeto analizar los resultados de mediciones efectuadas con PQI en mezclas bituminosas donde se utiliza emulsión asfáltica como ligante. Se comprueba la variabilidad de la densidad obtenida con el equipo para este tipo de mezclas, y se comparan los resultados con otros métodos de medida de densidad in situ

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.Comment: 11 pages, 7 figure