Generalized orientations and the Bloch invariant

Abstract. For compact hyperbolic 3-manifolds we lift the Bloch invariant defined by Neumann and Yang to an integral class in K3(C). Applying the Borel and the Bloch regulators, one gets back the volume and the Chern-Simons invariant of the manifold. We also discuss the non-compact case, in which there appears a Z/2-ambiguity

Infrared regularization of baryon chiral perturbation theory reformulated

We formulate the infrared regularization of Becher and Leutwyler in a form analogous to our recently proposed extended on-mass-shell renormalization. In our formulation, IR regularization can be applied straightforwardly to multi-loop diagrams with an arbitrary number of particles with arbitrary masses.Comment: 10 pages, ReVTEX 4, no figure

TFD Extension of Open String Field Theory

We study the application of the rules of Thermo Field Dynamics (TFD) to the covariant formulation of Open String Field Theory (OSFT). We extend the states space and fields according to the duplication rules of TFD and construct the corresponding classical action. The result is interpreted as a theory whose fields would encode the statistical information of open strings. The physical spectrum of the free theory is studied through the cohomology of the extended BRST charge, and, as a result, we get new fields in the spectrum emerging by virtue of the quantum entanglement and, noticeably, it presents degrees of freedom that could be identified as those of closed strings. We also show, however, that their appearing in the action is directly related to the choice of the inner product in the extended algebra, so that different sectors of fields could be eliminated from the theory by choosing that product conveniently. Finally, we study the extension of the three-vertex interaction and provide a simple prescription for it whose results at tree-level agree with those of the conventional theory.Comment: 25 pages, no figures. File format, typos, Abstract and references modified. New subsection and concluding comments were added. To appear in Phys. Rev.

Interacting electrons on trilayer honeycomb lattices

Few-layer graphene systems come in various stacking orders. Considering tight-binding models for electrons on stacked honeycomb layers, this gives rise to a variety of low-energy band structures near the charge neutrality point. Depending on the stacking order these band structures enhance or reduce the role of electron-electron interactions. Here, we investigate the instabilities of interacting electrons on honeycomb multilayers with a focus on trilayers with ABA and ABC stackings theoretically by means of the functional renormalization group. We find different types of competing instabilities and identify the leading ordering tendencies in the different regions of the phase diagram for a range of local and non-local short-ranged interactions. The dominant instabilities turn out to be toward an antiferromagnetic spin-density wave (SDW), a charge density wave and toward quantum spin Hall (QSH) order. Ab-initio values for the interaction parameters put the systems at the border between SDW and QSH regimes. Furthermore, we discuss the energy scales for the interaction-induced gaps of this model study and put them into context with the scales for single-layer and Bernal-stacked bilayer honeycomb lattices. This yields a comprehensive picture of the possible interaction-induced ground states of few-layer graphene.Comment: 12 pages, 12 figure

Axial, induced pseudoscalar, and pion-nucleon form factors in manifestly Lorentz-invariant chiral perturbation theory

We calculate the nucleon form factors G_A and G_P of the isovector axial-vector current and the pion-nucleon form factor G_piN in manifestly Lorentz-invariant baryon chiral perturbation theory up to and including order O(p^4). In addition to the standard treatment including the nucleon and pions, we also consider the axial-vector meson a_1 as an explicit degree of freedom. This is achieved by using the reformulated infrared renormalization scheme. We find that the inclusion of the axial-vector meson effectively results in one additional low-energy coupling constant that we determine by a fit to the data for G_A. The inclusion of the axial-vector meson results in an improved description of the experimental data for G_A, while the contribution to G_P is small.Comment: 21 pages, 9 figures, REVTeX

Low-energy electron beam focusing in self-organized porous alumina vacuum windows

Micromachined, micron-thick porous alumina membranes with closed pore endings show high electron transparency above an energy of 5 keV. This is due to the channeling of electrons along the negatively charged insulating pores after surmounting the thin entrance layer. We also find a sharp hightransparency energy window at energies as low as 2 keV which may be the result of a local maximum of channeling, as predicted by simulations, and positive charge up of the entrance layer causing electron electrostatic focusing. Applications for these membranes range from atmospheric electron spectroscopy to self-assembled, nanoscale, large-area electron collimators

Macroporous silicon membranes as electron and x-ray transmissive windows

Macroporous silicon membranes are fabricated whose pores are terminated with 60 nm thin silicon dioxide shells. The transmission of electrons with energies of 5 kV-25 kV through these membranes was investigated reaching a maximum of 22% for 25 kV. Furthermore, the transmission of electromagnetic radiation ranging from the far-infrared to the x-ray region was determined. The results suggest the application of the membrane as window material for electron optics and energy dispersive x-ray detectors

Ga^+ beam lithography for nanoscale silicon reactive ion etching

By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga^+ ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF_6/C_4F_8) and cryogenic fluorine (SF_6/O_2) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed