114 research outputs found

    Band-to-band transitions, selection rules, effective mass and exciton binding energy parameters in monoclinic \beta-Ga2O3

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    We employ an eigen polarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic \beta-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75 eV--9 eV. The eigen polarization model permits complete description of the dielectric response, and we obtain single-electron and excitonic band-to-band transition anisotropic critical point structure model parameters including their polarization eigenvectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using a recently proposed Gaussian-attenuation-Perdue-Burke-Ernzerhof hybrid density functional, and we present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their exciton binding energy parameters, in excellent agreement with our experimental results. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions, where the observed transitions are polarized closely in the direction of the lowest hole effective mass for the valence band participating in the transition

    Electron effective mass in Sn-doped monoclinic single crystal β\beta-gallium oxide determined by mid-infrared optical Hall effect

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    The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal β\beta-Ga2_2O3_3 is experimentally determined by mid-infrared optical Hall effect to be (0.284±0.013)m0(0.284\pm0.013)m_{0} combining investigations on (010010) and (2ˉ01\bar{2}01) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped β\beta-Ga2_2O3_3. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdue-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of 0.267m00.267m_{0} (arXiv:1704.06711 [cond-mat.mtrl-sci]). Within our uncertainty limits we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results

    Electron Entanglement via a Quantum Dot

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    This Letter presents a method of electron entanglement generation. The system under consideration is a single-level quantum dot with one input and two output leads. The leads are arranged such that the dot is empty, single electron tunneling is suppressed by energy conservation, and two-electron virtual co-tunneling is allowed. This yields a pure, non-local spin-singlet state at the output leads. Coulomb interaction is the nonlinearity essential for entanglement generation, and, in its absence, the singlet state vanishes. This type of electron entanglement is a four-wave mixing process analogous to the photon entanglement generated by a Chi-3 parametric amplifier.Comment: 4 page

    Formation of Semi-Insulating Layers on Semiconducting β-Ga 2

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    BCl 3

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