Temperature-dependent Raman scattering of KTa1-xNbxO3 thin films

We report a Raman scattering investigation of KTa1-xNbxO3 (x = 0.35, 0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 K to 720 K is similar to the structural phase transitions of the end-member material KNbO3. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (ferroelectric) to cubic (paraelectric) phase transition is up to 50 K higher in the films when compared to bulk samples. This enhanced ferroelectricity is attributed to biaxial strain in the investigated thin films

Observation of magnetization reversal in epitaxial Gd0.67Ca0.33MnO3 thin films

High quality epitaxial thin films of Gd0.67Ca0.33MnO3 have been deposited onto (100) SrTiO3 substrates by pulsed-laser deposition. Enhanced properties in comparison with bulk samples were observed. The magnetic transition temperature (Tc) of the as-grown films is much higher than the corresponding bulk values. Most interestingly, magnetization measurements performed under small applied fields, exhibit magnetization reversals below Tc, no matter whether the film is field-cooled (FC) or zero-field-cooled (ZFC). A rapid magnetization reversal occurs at 7 K when field cooled, while as for the ZFC process the magnetization decreases gradually with increasing temperatures, taking negative values above 7 K and changing to positive values again, above 83 K. In higher magnetic fields the magnetization does not change sign. The reversal mechanism is discussed in terms of a negative exchange f-d interaction and magnetic anisotropy, this later enhanced by strain effects induced by the lattice mismatch between the film and the substrate.Comment: 16 pages, 4 figure

Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates

International audienceThe epitaxial growth of lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al2O3) substrates, with and without introducing a CeO2 buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO3 substrates, with and without introducing a LaNiO3 layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO2 buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al2O3 substrates buffered with epitaxial (001)CeO2 layers, while, growing simply NBT on top of bare c or r-Al2O3 substrates, or on top of CeO2/c-Al2O3 heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO3 or (001)SrTiO3 substrates (STO) covered with (001)LaNiO3 (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO3 layer

Substrate-controlled allotropic phases and growth orientation of TiO2 epitaxial thin films

International audienceTiO2 thin films were grown by pulsed laser deposition on a wide variety of oxide single-crystal substrates and characterized in detail by four-circle X-ray diffraction. Films grown at 873 K on (100)-oriented SrTiO3 and LaAlO3 were (001)-oriented anatase, while on (100) MgO they were (100)-oriented. On (110) SrTiO3 and MgO, (102) anatase was observed. On M-plane and R-plane sapphire, (001)- and (101)-oriented rutile films were obtained, respectively. On C-plane sapphire, the coexistence of (001) anatase, (112) anatase and (100) rutile was found; increasing the deposition temperature tended to increase the rutile proportion. Similarly, films grown at 973 K on (100) and (110) MgO showed the emergence, besides anatase, of (110) rutile. All these films were epitaxically grown, as shown by ' scans and/or pole figures, and the various observed orientations were explained on the basis of misfit considerations and interface arrangement

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

International audienceZinc-gallium oxynitride powders (ZnGaON) were synthesized by nitridation of ZnGa2O4 oxide precursor obtained by polymeric precursors (PP) and solid state reaction (SSR) methods and the influence of the synthesis route of ZnGa2O4 on the final compound ZnGaON was investigated. Crystalline single phase ZnGa2O4 was obtained at 1100 oC / 12 h by SSR and at 600 oC / 2 h by PP with different grain sizes and specific surface areas according to the synthesis route. After nitridation, ZnGaON oxynitrides with a GaN würtzite-type structure were obtained in both cases, however at lower temperatures for PP samples. The microstructure and the specific surface area were strongly dependent on the oxide synthesis method and on the nitridation temperature (42 m2g-1 and 5 m2g-1 for PP and SSR oxides treated at 700 °C, respectively). The composition analyses showed a strong loss of Zn for the PP samples, favored by the increase of ammonolysis temperature and by the higher specific surface area

Couches minces supraconductrices à haute température critique pour l'électronique

Les supraconducteurs à haute température critique ouvrent des perspectives prometteuses dans le domaine de l'électronique en raison de la maîtrise de la croissance de films minces de haute qualité cristalline et physique, malgré des difficultés spécifiques. Des dispositifs, aussi bien actifs que passifs, commencent à être réalisés dans divers laboratoires, montrant que des applications peuvent être effectivement envisagées à relativement court terme

Growth of Laser Ablated YBa2\text{}_{2}Cu3\text{}_{3}O7\text{}_{7} Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties

The graphoepitaxial growth of c-axis YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: ⟨100⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 0}$ notation or ⟨110⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 45}$ notation. The ratio of c$\text{}_{⊥ 45}$/c$\text{}_{⊥ 0}$ in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channeling patterns and reflection high energy electron diffraction diagrams. The coexistence of c$\text{}_{⊥ 0}$ and c$\text{}_{⊥ 45}$ domains creates high angle grain boundaries. No degradation of T$\text{}_{c}$, residual resistance ratio (RRR) or ΔT$\text{}_{c}$ is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (R$\text{}_{S}$ at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susceptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then R$\text{}_{S}$ are discussed