X-ray response of STJ detectors using NbN absorbing layers

We have designed and tested 5 x 5 mm(2) chips containing island type STJs with different geometries, fabricated on Si substrates in the configuration Nb/Al-AlOx/Nb and using a NbN overlayer acting both as wiring and radiation absorber. The aim is to investigate the advantages of the trapping effect due to the Nb layer trap. In fact, for the NbN/Nb bilayer the scattering time is much faster than the values calculated for other Nb based bilayers, leading to more efficient trapping processes. The junctions have been characterized by tunneling and Josephson current measurements down to 0.5 K. Experimental results concerning the response of the devices under X-ray irradiation down to 60 mK are presented and discussed

Panton-valentine leucocidin (PVL) staphylococcus aureus a position statement from the international society of chemotherapy

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Optimal control of shot noise and Fano factor by external fields

A method is devised to control the current, shot noise and Fano factor in a molecular junction using external fields. The tunneling of electrons through a molecular junction weakly coupled to two leads in the presence of a time-dependent external field is studied using a quantum master equation approach. By combining optimal control theory and assuming a predefined time-dependent current pattern, an external field can be determined which does generate a current pattern close to the requested one. With this approach the current flow pattern in time can be chosen in an almost arbitrary fashion. The same technique can be applied to control the shot noise. For minimizing the current, the corresponding shot noise decreases but does not vanish. By minimizing the shot noise, the corresponding current also approaches zero for the present model of spinless electrons. Within certain limits the proposed strategy even works well for the control of the Fano factor. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010