A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.Comment: Talk presented at the 10th European Symposium on Semiconductor Detectors, June 12-16 2005, Wildbad Kreuth, Germany. 9 pages, 4 figure

UHF and VHF radar observations of thunderstorms

A study of thunderstorms was made in the Summer of 1985 with the 430-MHz and 50-MHz radars at the Arecibo Observatory in Puerto Rico. Both radars use the 300-meter dish, which gives a beam width of less than 2 degrees even at these long wavelengths. Though the radars are steerable, only vertical beams were used in this experiment. The height resolution was 300 and 150 meters for the UHF and VHF, respectively. Lightning echoes, as well as returns from precipitation and clear-air turbulence were detected with both wavelengths. Large increases in the returned power were found to be coincident with increasing downward vertical velocities at UHF, whereas at VHF the total power returned was relatively constant during the life of a storm. This was attributed to the fact that the VHF is more sensitive to scattering from the turbulence-induced inhomogeneities in the refractive index and less sensitive to scatter from precipitation particles. On occasion, the shape of the Doppler spectra was observed to change with the occurrence of a lightning discharge in the pulse volume. Though the total power and mean reflectivity weighted Doppler velocity changed little during these events, the power is Doppler frequency bins near that corresponding to the updraft did increase substantially within a fraction of a second after a discharge was detected in the beam. This suggests some interaction between precipitation and lightning

Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents

Hydrogen adatoms are shown to generate magnetic moments inside single layer graphene. Spin transport measurements on graphene spin valves exhibit a dip in the non-local spin signal as a function of applied magnetic field, which is due to scattering (relaxation) of pure spin currents by exchange coupling to the magnetic moments. Furthermore, Hanle spin precession measurements indicate the presence of an exchange field generated by the magnetic moments. The entire experiment including spin transport is performed in an ultrahigh vacuum chamber, and the characteristic signatures of magnetic moment formation appear only after hydrogen adatoms are introduced. Lattice vacancies also demonstrate similar behavior indicating that the magnetic moment formation originates from pz-orbital defects.Comment: accepted to Phys. Rev. Let

Effect of dislocations on properties of heteroepitaxial InP solar cells

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells

Measurements with the Chandra X-Ray Observatory's flight contamination monitor

NASA's Chandra X-ray Observatory includes a Flight Contamination Monitor (FCM), a system of 16 radioactive calibration sources mounted to the inside of the Observatory's forward contamination cover. The purpose of the FCM is to verify the ground-to-orbit transfer of the Chandra flux scale, through comparison of data acquired during the ground calibration with those obtained in orbit, immediately prior to opening the Observatory's sun-shade door. Here we report results of these measurements, which place limits on the change in mirror--detector system response and, hence, on any accumulation of molecular contamination on the mirrors' iridium-coated surfaces.Comment: 7pages,8figures,for SPIE 4012, paper 7

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.Comment: Contribution to the IEEE-NSS Oct. 2003, Portland, OR, USA, submitted to IEEE-TNS 7 pages, 8 figures, 1 table. Revised, title change

Extraction of electric field in heavily irradiated silicon pixel sensors

A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.Comment: 6 pages, 11 figures, presented at the 13th International Workshop on Vertex Detectors for High Energy Physics, September 13-18, 2004, Menaggio-Como, Italy. Submitted to Nucl. Instr. Meth.

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.Comment: 8 pages, LaTeX document, 10 figures. Presented at Pixel 2005 Workshop, Bonn, Sept 2005. Small cosmetic revisions in response to referee comments and to fix broken reference link

A new technique for the reconstruction, validation, and simulation of hits in the CMS Pixel Detector

This note describes new techniques for the reconstruction/validation and the simulation of pixel hits. The techniques are based upon the use of pre-computed projected cluster shapes or ``templates''. A detailed simulation called Pixelav that has successfully described the profiles of clusters measured in beam tests of radiation-damaged sensors is used to generate the templates. Although the reconstruction technique was originally developed to optimally estimate the coordinates of hits after the detector became radiation damaged, it also has superior performance before irradiation. The technique requires a priori knowledge of the track angle which makes it suitable for the second in a two-pass reconstruction algorithm. However, the same modest angle sensitivity allows the algorithm to determine if the sizes and shapes of the cluster projections are consistent with the input angles. This information may be useful in suppressing spurious hits caused by secondary particles and in validating seeds used in track finding. The seed validation is currently under study but has the potential to significantly increase the speed of track finding in the offline reconstruction. Finally, a new procedure that uses the templates to re-weight clusters generated by the CMSSW simulation is described. The first tests of this technique are encouraging and when fully implemented, the technique will enable the fast simulation of pixel hits that have the characteristics of the much more CPU-intensive Pixelav hits. In particular, it may be the only practical technique available to simulate hits from a radiation damaged detector in CMSSW