Resonant spin amplification of hole spin dynamics in two‐dimensional hole systems: experiment and simulation

Spins in semiconductor structures may allow for the realization of scalable quantum bit arrays, an essential component for quantum computation schemes. Specifically, hole spins may be more suited for this purpose than electron spins, due to their strongly reduced interaction with lattice nuclei, which limits spin coherence for electrons in quantum dots. Here, we present resonant spin amplification (RSA) measurements, performed on a p-modulation doped GaAs-based quantum well at temperatures below 500 mK. The RSA traces have a peculiar, butterfly-like shape, which stems from the initialization of a resident hole spin polarization by optical orientation. The combined dynamics of the optically oriented electron and hole spins are well-described by a rate equation model, and by comparison of experiment and model, hole spin dephasing times of more than 70 ns are extracted from the measured data

Controlling hole spin dynamics in two‐dimensional hole systems at low temperatures

With the recent discovery of very long hole spin decoherence times in GaAs/AlGaAs heterostructures of more than 70 ns in two-dimensional hole systems, using the hole spin as a viable alternative to electron spins in spintronic applications seems possible. Furthermore, as the hyperfine interaction with the nuclear spins is likely to be the limiting factor for electron spin lifetimes in zero dimensions, holes with their suppressed Fermi contact hyperfine interaction due to their p-like nature should be able to show even longer lifetimes than electrons. For spintronic applications, electric-field control of hole spin dynamics is desirable. Here, we report on time-resolved Kerr rotation and resonant spin amplification measurements on a two-dimensional hole system in a p-doped GaAs/AlGaAs heterostructure. Via a semitransparent gate, we tune the charge density within the sample. We are able to observe a change in the hole g factor, as well as in the hole spin dephasing time at high magnetic fields

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells

Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells is studied via the fully microscopic kinetic spin Bloch equation approach where all the scatterings, such as the electron-impurity, electron-phonon, electron-electron Coulomb, electron-hole Coulomb, electron-hole exchange (the Bir-Aronov-Pikus mechanism) and the $s$-$d$ exchange scatterings, are explicitly included. The Elliot-Yafet mechanism is also incorporated. From this approach, we study the spin relaxation in both $n$-type and $p$-type Ga(Mn)As quantum wells. For $n$-type Ga(Mn)As quantum wells where most Mn ions take the interstitial positions, we find that the spin relaxation is always dominated by the DP mechanism in metallic region. Interestingly, the Mn concentration dependence of the spin relaxation time is nonmonotonic and exhibits a peak. This behavior is because that the momentum scattering and the inhomogeneous broadening have different density dependences in the non-degenerate and degenerate regimes. For $p$-type Ga(Mn)As quantum wells, we find that Mn concentration dependence of the spin relaxation time is also nonmonotonic and shows a peak. Differently, this behavior is because that the $s$-$d$ exchange scattering (or the Bir-Aronov-Pikus) mechanism dominates the spin relaxation in the high Mn concentration regime at low (or high) temperature, whereas the DP mechanism determines the spin relaxation in the low Mn concentration regime. The Elliot-Yafet mechanism also contributes the spin relaxation at intermediate temperature. The spin relaxation time due to the DP mechanism increases with Mn concentration due to motional narrowing, whereas those due to the spin-flip mechanisms decrease with Mn concentration, which thus leads to the formation of the peak.... (The remaining is omitted due to the space limit)Comment: 12 pages, 8 figures, Phys. Rev. B 79, 2009, in pres

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene

Hole spin dynamics and hole gg factor anisotropy in coupled quantum well systems

Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex spin-dependent phenomena. One manifestation is the large anisotropy of Zeeman spin splitting. Using undoped, coupled quantum wells (QWs), we examine this anisotropy by comparing the hole spin dynamics for high- and low-symmetry crystallographic orientations of the QWs. We directly measure the hole $g$ factor via time-resolved Kerr rotation, and for the low-symmetry crystallographic orientations (110) and (113a), we observe a large in-plane anisotropy of the hole $g$ factor, in good agreement with our theoretical calculations. Using resonant spin amplification, we also observe an anisotropy of the hole spin dephasing in the (110)-grown structure, indicating that crystal symmetry may be used to control hole spin dynamics

Circularly Polarized Resonant Rayleigh Scattering and Skyrmions in the ν\nu = 1 Quantum Hall Ferromagnet

We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $\nu$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Skymionic effects, screening and spin wave excitations. These results evidence that RRS is a valid method for the study of the spin texture of the quantum Hall states

Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser

We report on lasing in rolled-up microtube resonators. Time-resolved studies on these semiconductor lasers containing GaAs quantum wells as optical gain material reveal particularly fast turn-on-times and short pulse emissions above the threshold. We observe a strong red-shift of the laser mode during the pulse emission which is compared to the time evolution of the charge-carrier density calculated by rate equations

Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al_{0.3}Ga_{0.7}As single QW and showing that our model can reproduce experimentally observed signals.Comment: 9 pages, 3 figures; corrected typo