Millennials and the Increasing Use of Social Media: Impact on the Employee Life Cycle

The millennial generation is a generation of society that values technology, media, and connections, all three being equally important. This paper studies and theorizes the implications that social media has had on the workplace throughout the employee life cycle and how the traditional processes of this cycle have been altered. In the workforce, this aspect of the employee life cycle incorporates all different stages an employee goes through. From networking to being hired, to forming connections with co-workers, to working hard and performing well, to being fired, social media has impacted each stage of this cycle. Social media is a phenomenon that has continuously grown and has become important in all aspects of society, but this paper argues that it has specifically influenced the work world. Popular social media platforms like LinkedIn and Facebook have encouraged employees to utilize social media to help aid in networking and personal connections but have also been used by employers to determine the organizations hiring and firing process. Social media use has only increased in recent years and it is evident that the implications discussed in this paper have made extremely beneficial changes to the employee life cycle

Institutions Compromising Academics for Athletic and Economic Reward

Student athletes are an integral part of NCAA divisions, specifically student athletes of color. Through research regarding athletic and economic statistics, it has been proven that the necessity of talent in athletics is far more important than success in academics. Student athletes are often represented through their role as an athlete first, then followed by the role of the student. Graduation rates, athletic success, and economic profit is all explored in a racial context in this paper in order to further prove the exploitation that institutions involve themselves in

A simplified, compact static shift register

Shift register was developed which uses only one D type flip-flop and improves packaging density by approximately 25% over the usual arrangement. Circuit is compromise between full master-slave arrangement and dynamic shift register, with limitation only of length of time that clock can be held high during new data entry

Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum wells, wires, and dots, and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified novel and interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k-dot-p theory and provide a comprehensive overview of band structures for strained heterostructures.Comment: 9 pages, 17 figure

Quantum wires from coupled InAs/GaAs strained quantum dots

The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which the miniband widths and effective masses are controlled by the distance between the islands, d. The miniband structure is calculated as a function of d, and it is shown that for d>4 nm the miniband is narrower than the optical phonon energy, while the gap between the first and second minibands is greater than the optical phonon energy. This leads to decreased optical phonon scattering, providing improved quantum wire behavior at high temperatures. These miniband properties are also ideal for Bloch oscillation.Comment: 5 pages revtex, epsf, 8 postscript figure

Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase

Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free standing nanowires is polarization dependent. One contribution to this effect is the anisotropy of the dielectric function due to the fact that most nanowires crystalize in the wurtzite form. While little is known experimentally about the band structures wurtzite phase III-V semiconductors, we have previously predicted the bulk band structure of nine III-V semiconductors in wurtzite phase.Here, we predict the frequency dependent dielectric functions for nine non-Nitride wurtzite phase III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb). Their complex dielectric functions are calculated in the dipole approximation by evaluating the momentum matrix elements on a dense grid of special k-points using empirical pseudopotential wave functions. Corrections to the momentum matrix elements accounting for the missing core states are made using a scaling factor which is determined by using the optical sum rules on the calculated dielectric functions for the zincblende polytypes. The dielectric function is calculated for polarizations perpendicular and parallel to the c-axis of the crystal

Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits

A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly influenced by the dot geometry so the spin may be more polarized than the emitted light would naively suggest. We have calculated carrier polarization-dependent optical matrix elements using 8-band strain-dependent k.p theory for InAs/GaAs self-assembled quantum dots (SAQDs) for electron and hole spin injection into a range of quantum dot sizes and shapes, and for arbitrary emission directions. The observed circular polarization does not depend on whether the injected spin-polarized carriers are electrons or holes, but is strongly influenced by the SAQD geometry and emission direction. Calculations for typical SAQD geometries with emission along [110] show light that is only ~5% circularly polarized for spin states that are 100% polarized along [110]. Therefore observed polarizations [Chye et al. PRB 66, 201301(R)] of ~1% imply a spin polarization within the dot of ~20%. We also find that measuring along the growth direction gives near unity conversion of spin to photon polarization, and is the least sensitive to uncertainties in SAQD geometry.Comment: 4 pages, 6 figure

Phase 1 of the automated array assembly task of the low cost silicon solar array project

The results of a study of process variables and solar cell variables are presented. Interactions between variables and their effects upon control ranges of the variables are identified. The results of a cost analysis for manufacturing solar cells are discussed. The cost analysis includes a sensitivity analysis of a number of cost factors

Arkansas Soybean Performance Tests 2008

Soybean cultivar performance tests are conducted each year in Arkansas by the University of Arkansas Division of Agriculture. The tests provide information to companies developing cultivars and/or marketing seed within the state, and aid the Arkansas Cooperative Extension Service in formulating cultivar recommendations for soybean producer